Admittance of a-Si:H/c-Si Schottky Diodes

1996 ◽  
Vol 420 ◽  
Author(s):  
S. Gall ◽  
R. Hirschauer ◽  
M. Kolter ◽  
D. Bräunig
Keyword(s):  
Equivalent Circuit ◽  
Valence Band ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Band Offset ◽  
Valence Band Offset ◽  
Conduction Band Offset ◽  
Absorption Of Light ◽  
Spectral Behaviour ◽  
Frequency Temperature

AbstractWe have measured the admittance (conductance and capacitance) of a-Si:H/c-Si heterostructure Schottky diodes as a function of frequency, temperature and voltage in the dark and under spectral illumination (in the wavelength range between λ=500nm and λ=1200nm). Thus, it is possible to observe the activation/deactivation of trapping-detrapping effects within the a-Si:H layer (near the a-Si:H/c-Si interface). We have determined the conduction band offset of the a-Si:H/c-Si heterostructure. The spectral behaviour of the admittance is dominated by the absorption of light in the c-Si and the valence band offset of the heterojunction. We have also developed an equivalent circuit of the a-Si:H/c-Si heterostructure Schottky diode in the dark, which is capable of describing the measured behaviour.

Electron and Hole Confinement in GaInN/GaN and AlGaN/GaN Quantum Wells

2001 ◽  
Vol 693 ◽  
Author(s):  
A. Hangleiter ◽  
S. Lahmann ◽  
C. Netzel ◽  
U. Rossow ◽  
P. R. C. Kent ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Conduction Band ◽  
Band Offset ◽  
Valence Band Edge ◽  
Valence Band Offset ◽  
Time Resolved ◽  
Conduction Band Offset ◽  
Hole Confinement ◽  
Weak Electron

AbstractWe show that the strong bowing of the bandgap of GaInN, which is primarily due to bowing of the valence band edge, translates into a strongly composition dependent ratio of the conduction band offset to the valence band offset with respect to GaN. For common In mole fractions of 0-20 % this leads to a reversal of the band offset ratio and to very weak electron con nement. This theoretical picture is veri ed by comparing results of time-resolved spectroscopy on asymmetric AlGaN/GaInN/GaN and AlGaN/GaN/AlGaN quantum wells. Since electron con nement is much stronger for GaN/AlGaN wells than for GaInN/GaN wells, the effect of asymmetry is very weak for the former and fairly strong for the latter.

scholarly journals The Synthesis of NiO/TiO2Heterostructures and Their Valence Band Offset Determination

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Z. H. Ibupoto ◽  
M. A. Abbasi ◽  
X. Liu ◽  
M. S. AlSalhi ◽  
M. Willander
Keyword(s):  
Valence Band ◽  
Conduction Band ◽  
Photoelectron Spectroscopy ◽  
Glass Substrate ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray ◽  
Conduction Band Offset ◽  
P Type ◽  
Fto Glass

In this work, a heterojunction based on p-type NiO/n-type TiO2nanostructures has been prepared on the fluorine doped tin oxide (FTO) glass substrate by hydrothermal method. Scanning electron microscopy (SEM) and X-Ray diffraction techniques were used for the morphological and crystalline arrays characterization. The X-ray photoelectron spectroscopy was employed to determine the valence-band offset (VBO) of the NiO/TiO2heterojunction prepared on FTO glass substrate. The core levels of Ni 2p and Ti 2p were utilized to align the valence-band offset of p-type NiO/n-type TiO2heterojunction. The valence band offset was found to be∼0.41 eV and the conduction band was calculated about∼0.91 eV. The ratio of conduction band offset and the valence-band offset was found to be 2.21.

Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy

1992 ◽  
Vol 46 (3) ◽  
pp. 1886-1888 ◽  
Author(s):  
Gérald Arnaud ◽  
Philippe Boring ◽  
Bernard Gil ◽  
Jean-Charles Garcia ◽  
Jean-Pierre Landesman ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset ◽  
Photoreflectance Spectroscopy

X-ray photoelectron spectroscopy measurement of n-ZnO/p-NiO heterostructure valence-band offset

2009 ◽  
Vol 94 (2) ◽  
pp. 022108 ◽  
Author(s):  
R. Deng ◽  
B. Yao ◽  
Y. F. Li ◽  
Y. M. Zhao ◽  
B. H. Li ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray ◽  
Spectroscopy Measurement

scholarly journals Valence band offset of InN∕AlN heterojunctions measured by x-ray photoelectron spectroscopy

2007 ◽  
Vol 90 (13) ◽  
pp. 132105 ◽  
Author(s):  
P. D. C. King ◽  
T. D. Veal ◽  
P. H. Jefferson ◽  
C. F. McConville ◽  
T. Wang ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray

A simulation study of valence band offset engineering at the perovskite/Cu2ZnSn(Se1-xSx)4 interface for enhanced performance

2019 ◽  
Vol 90 ◽  
pp. 59-64 ◽  
Author(s):  
Nian Cheng ◽  
Weiwei Li ◽  
Shujie Sun ◽  
Zhiqiang Zhao ◽  
Zhenyu Xiao ◽  
...  
Keyword(s):  
Valence Band ◽  
Simulation Study ◽  
Band Offset ◽  
Valence Band Offset

The growth of ZnO on buffer layers and the valence band offset determined by X-ray photoemission spectroscopy

2010 ◽  
Vol 150 (41-42) ◽  
pp. 1991-1994 ◽  
Author(s):  
H.P. Song ◽  
G.L. Zheng ◽  
A.L. Yang ◽  
Y. Guo ◽  
H.Y. Wei ◽  
...  
Keyword(s):  
Valence Band ◽  
Buffer Layers ◽  
Photoemission Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray

Small valence band offset of h-BN/Al0.7Ga0.3N heterojunction measured by X-ray photoelectron spectroscopy

2019 ◽  
Vol 114 (1) ◽  
pp. 011603 ◽  
Author(s):  
Guo-Dong Hao ◽  
Sachiko Tsuzuki ◽  
Shin-ichiro Inoue
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray
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