The Role of Adsorbed Water Molecules in Bulk Restructuring of Amorphous Tungsten Trioxide Films

1995 ◽  
Vol 417 ◽  
Author(s):  
I. V. Shiyanovskaya
Keyword(s):  
Tungsten Trioxide ◽  
Aqueous Electrolyte ◽  
Adsorbed Water ◽  
High Energy ◽  
Water Molecules ◽  
High Energy Electron ◽  
Film Stability ◽  
Influence Of Water ◽  
Scanning Electron

AbstractThe influence of water molecules adsorbed at the surface of electrochromic WO3 films on film stability in aqueous electrolyte has been studied by scanning electron microscopy and high energy electron diffraction.

Preparation of WSi2 by RTA Annealing of CVD-W thin Films

1995 ◽  
Vol 402 ◽  
Author(s):  
K. A. Gesheva ◽  
G. I. Stoyanov ◽  
D. S. Gogova ◽  
G. D. Beshkov
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Atmospheric Pressure ◽  
High Energy ◽  
Argon Atmosphere ◽  
High Energy Electron ◽  
Different Gases ◽  
Scanning Electron

AbstractWsi2 films were prepared by rapid thermal annealing (RTA) in the temperature range of 800 -1400 °C for time durations of 15 sec -3 minutes. In some of the treatment experiments different gases were involved and a conclusion is made about the role of hydrogen favoring Wsi crystal phase growing at 800 °C. W films with thichnesses in the range 200 Å - 1000 Å were deposited on monocrystalline Si by pyrolitical decomposition of W(CO)6 in CVD reactor at atmospheric pressure and argon atmosphere. Reflection High Energy Electron Diffraction (RHEED) and Scanning Electron Microscopy (SEM) technics were used for structural characterization and FPP-100 device for resistance measurements. Results show that by solid state reaction applied at different RTA processes WSi2 phase could be formed.Resistivities as low as 2-3 mΩ.cm are obtained for 800 -1000 °C.

Characterization Techniques For Laser-Annealed Polysilicon on Insulating Layers

1980 ◽  
Vol 1 ◽  
Author(s):  
J. T. Schott ◽  
J. J. Comer
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
High Energy ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Characterization Techniques ◽  
Cw Laser ◽  
Transmission Electron ◽  
Scanning Electron

ABSTRACTVarious characterization techniques are applied to pulsed and cw laser-annealed polysilicon layers deposited on oxide layers. The results are used to compare these techniques as to the type and completeness of information provided, as well as sample preparation requirements and general ease or difficulty of measurement. The techniques employed include scanning electron microscopy (SEM), electron channeling micrographs and selected area channeling patterns (SACP), reflection (high energy) electron diffraction (RHEED), transmission electron microscopy (TEM) and selected area diffraction (SAD), x-ray diffraction, optical techniques and etching techniques.

The role of radio frequency scattering in high-energy electron losses from minimum-B ECR ion source

2021 ◽  
Vol 63 (4) ◽  
pp. 045007
Author(s):  
I V Izotov ◽  
A G Shalashov ◽  
V A Skalyga ◽  
E D Gospodchikov ◽  
O Tarvainen ◽  
...  
Keyword(s):  
Radio Frequency ◽  
High Energy ◽  
Ion Source ◽  
Energy Electron ◽  
High Energy Electron ◽  
Ecr Ion Source

Change of Arsenic Coverage on GaAs(001)

1993 ◽  
Vol 312 ◽  
Author(s):  
Holger Nörenberg ◽  
Nobuyuki Koguchi
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam ◽  
Accurate Determination ◽  
High Energy ◽  
Surface Structures ◽  
Rheed Pattern ◽  
High Energy Electron ◽  
Reconstructed Surface ◽  
Scanning Electron

Abstract(2×4) and c(4×4) reconstructed GaAs(001) surfaces prepared by Molecular Beam Epitaxy (MBE) were studied by Reflection High Energy Electron Diffraction (RHEED). A method for accurate determination of the Arsenic coverage of reconstructed GaAs(001) surfaces is introduced. The time of Gallium supply to the reconstructed surface until a halo appears in the RHEED pattern is taken as measure for the Arsenic coverage. Structures between them were investigated at a substrate temperature of 200°C. The RHEED results were verified by High Resolution Scanning Electron Microscopy (HRSEM). Dependent on the surface reconstruction, Arsenic coverages between 0.76 and 1.22 monolayer (ML) were observed. Surface structures, observed during transformation between β(2×4) and c(4×4) will be discussed.

Deposition of Gallium Nitride Films using Ammonia and Triethylgallium Seeded Helium Beams

1995 ◽  
Vol 395 ◽  
Author(s):  
J. J. Sumakeris ◽  
R. K. Chilukuri ◽  
R. F. Davis ◽  
H. H. Lamb
Keyword(s):  
Gallium Nitride ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Deposition Process ◽  
High Energy ◽  
High Energy Electron ◽  
Gas Streams ◽  
Helium Gas ◽  
Scanning Electron ◽  
Deposition Conditions

ABSTRACTGallium nitride films have been deposited on Si(100) and Al2O3(0001) substrates using triethylgallium and ammonia seeded into highly expanded helium gas streams. A two step deposition process that reproducibly results in continuous crystalline GaN films has been developed. The microstructure and composition of the resultant films were characterized by scanning electron microscopy, reflection high energy electron diffraction and Auger electron spectroscopy and film character was correlated to deposition conditions.

Antiphase Defect Reduction Mechanism in Mbe Grown Gaas on Si

1989 ◽  
Vol 148 ◽  
Author(s):  
Takashi Shiraishi ◽  
Haruhiko Ajisawa ◽  
Shin Yokoyama ◽  
Mitsuo Kawabe
Keyword(s):  
Electron Microscope ◽  
Antiphase Boundary ◽  
High Energy ◽  
The Self ◽  
Polished Surface ◽  
Reduction Mechanism ◽  
High Energy Electron ◽  
Etch Pits ◽  
Defect Reduction ◽  
Scanning Electron

ABSTRACTIt is shown that antiphase boundary (APB) is annihilated during the growth, by monitoring the surface with reflection high energy electron diffraction (RHEED). The RHEED observation indicates that double domain GaAs changes to single domain within a thickness of 100 nm, while the transition region is estimated to exist within 200 nm from GaAs-Si interface by scanning electron microscope (SEM) observation of etch pits on vicinally polished surface. The self-annihilation mechanism of APB is discussed from these results.

Role of Ambience on the Diffusion of Charge Carriers in the Tio2 Layers Investigated by the Photovoltage Technique

2002 ◽  
Vol 747 ◽  
Author(s):  
V. Duzhko ◽  
J. Rappich ◽  
Th. Dittrich
Keyword(s):  
Electron Microscopy ◽  
Charge Carriers ◽  
Water Molecules ◽  
Excess Charge ◽  
Porous Layers ◽  
Subsequent Separation ◽  
Porous Morphology ◽  
Polar Water ◽  
Scanning Electron

ABSTRACTThe transition from anatase to rutile crystalline phase and from continuous to porous morphology was observed by Raman spectroscopy and scanning electron microscopy, respectively, in anodic TiO2 layers as the time of anodization was increased. The mechanism of the PV formation changes from trap- limited PV in thin continuous layers to diffusion PV in thick porous layers. The generation of excess charge carriers and their subsequent separation in space are strongly dependent on the ambience (air, vacuum, water) in porous layers. The importance of polar water molecules for screening of surface ions of porous TiO2 and excess charge carriers separated in space is discussed.

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