AlInAs Band Gap Modulations Observed by Tem and Optical Measurements
Keyword(s):
Band Gap
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AbstractAt a low MBE growth temperature (400°C), an anisotropic composition modulation has been observed by Transmission Electron Microscopy (TEM) on AIlnAs layers. Optical measurements have been performed on these samples and compared with classical AllnAs grown at 530°C. We show the clustering “organization” on the low temperature layers and we propose some hypothesis to explain the composition modulation effects on the AlInAs optical properties.
1992 ◽
Vol 50
(1)
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pp. 88-89
2019 ◽
2015 ◽
Vol 48
(3)
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pp. 836-843
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2003 ◽
Vol 18
(2)
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pp. 475-481
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