Raman spectra of charge transfer organic compounds: Conductors And Semiconductors

1995 ◽  
Vol 413 ◽  
Author(s):  
R. Gómez ◽  
R. Ridaura ◽  
M. Quintana ◽  
M. L. Marquina ◽  
V. Marquina ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Charge Transfer ◽  
Raman Spectra ◽  
Coordination Compounds ◽  
Room Temperature ◽  
Molecular Solids ◽  
Donor And Acceptor ◽  
Ft Ir ◽  
Degree Of Charge Transfer

ABSTRACTA series of coordination compounds -macrocycle tetraaza derivatives with extended electronic conjugations- as molecular solids have been synthesized and analyzed by Raman spectroscopy. Their resistivity vs. temperature characteristics, measured in thin films, show three types of behavior: metallic, semiconductor and, in some cases, semiconductor with a transition to metallic below certain temperature. Room temperature Raman spectra were obtained in a FT-IR spectrometer and some stretching modes show different Raman shifts depending on the reactants. We relate these shifts with the degree of charge transfer between donor and acceptor radicals.

Laser Induced Oxidation Effects in Bismuth Thin Films

2012 ◽  
Vol 1477 ◽  
Author(s):  
Marco A. Zepeda ◽  
Michel Picquart ◽  
Emmanuel Haro-Poniatowski
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Laser Irradiation ◽  
Raman Spectra ◽  
Exposure Time ◽  
Oxidation Process ◽  
Energy Dispersion Spectroscopy ◽  
Irradiation Power ◽  
Pure Bismuth ◽  
532 Nm

ABSTRACTThe Laser induced oxidation process of bismuth was investigated using Raman spectroscopy. Upon laser irradiation (λ = 532 nm) pure Bismuth was transformed gradually into Bi2O3. Raman spectra of the samples showed the characteristics peaks for pure Bi located at 71 cm-1 and 96 cm-1. The oxidation process was monitored by Raman spectra with four additional bands located at about 127 cm-1, 241 cm-1, 313 cm-1 and 455 cm-1. Maintaining constant the exposure time of irradiation, the intensity of these bands depended on laser irradiation power. The presence of Bi2O3 in the sample was confirmed through by energy dispersion spectroscopy (EDS).

Characteristics of CZTSSe Thin Films Prepared by Selenization of Sputtered Cu, Sn and ZnS Layers

2019 ◽  
Vol 18 (03n04) ◽  
pp. 1940040 ◽  
Author(s):  
N. Akcay ◽  
S. Ozcelik ◽  
E. Zaretskaya ◽  
R. Juskenas
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Sem Study ◽  
Packed Structure

We reported the growth of CZTSSe thin films on Mo-coated SLG substrates by the two-step approach which includes the deposition of precursor films by the magnetron sputtering method at room temperature followed by selenization of the precursor films at 560∘C. Formation of CZTSSe films with the kesterite structure was confirmed by XRD and Raman spectroscopy analyses. The films are slightly Cu-rich and Zn-deficient. SEM study shown that the films have uniform surface morphology and densely packed structure without any voids and cracks.

Platelet Adhesion Study and Characteristic of Hydrogenated Carbon Films Synthesized by PIII-D

2005 ◽  
Vol 288-289 ◽  
pp. 323-326 ◽  
Author(s):  
Feng Wen ◽  
Nan Huang ◽  
H. Sun ◽  
Ping Yang ◽  
Jin Wang
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Raman Spectra ◽  
Room Temperature ◽  
Platelet Adhesion ◽  
Carbon Films ◽  
Photoelectron Spectra ◽  
X Ray ◽  
Composition And Structure ◽  
Amorphous Hydrogenated Carbon

Amorphous hydrogenated carbon (a-C:H) thin films were deposited on silicon wafers and Ti6Al4V substrate using plasma ion immersion implantation and deposition (PIII-D) at room temperature (R.T.). The composition and structure of a-C:H films were employed by X-ray photoelectron spectra (XPS) and Raman spectra. Nano-indenter tests measured the hardness of the films. In addition, wettability and bloodcompatibility were investigated. In this paper, the effects of hydrogen content on structure, mechanical properties, surface wettability and haemocompatibility were discussed.

scholarly journals Origin of Ultraviolet Luminescence from Bulk ZnO Thin Films Grown by Molecular Beam Epitaxy

2011 ◽  
Vol 1 ◽  
pp. 135-139 ◽  
Author(s):  
M. Asghar ◽  
Khalid Mahmood ◽  
Adnan Ali ◽  
M.A. Hasan ◽  
I. Hussain ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Energy Dispersive ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Uv Luminescence

Origin of ultraviolet (UV) luminescence from bulk ZnO has been investigated with the help of photoluminescence (PL) measurements. Thin films of ZnO having 52%, 53% and 54% of Zn-contents were prepared by means of molecular beam epitaxy (MBE). We observed a dominant UV line at 3.28 eV and a visible line centered at 2.5 eV in the PL spectrum performed at room temperature. The intensity of UV line has been found to depend upon the Zn percentage in the ZnO layers. Thereby, we correlate the UV line in our samples with the Zn-interstitials-bound exciton (Zni-X) recombination. The results obtained from, x-ray diffraction, the energy dispersive X-ray spectrum (EDAX) and Raman spectroscopy supported the PL results.

scholarly journals Investigation of Charge Transfer Complexes Formed between Mirtazapine and Someπ-Acceptors

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Hulya Demirhan ◽  
Mustafa Arslan ◽  
Mustafa Zengin ◽  
Mustafa Kucukislamoglu
Keyword(s):  
Charge Transfer ◽  
Dosage Form ◽  
Room Temperature ◽  
Equilibrium Constants ◽  
Formation Constants ◽  
Electron Acceptors ◽  
Spectral Studies ◽  
Charge Transfer Complexes ◽  
Ir And Nmr Spectroscopy ◽  
Ft Ir

Charge transfer complexes (CTC) of mirtazapine with tetracyanoethylene (TCNE), 2,3-dichloro-5,6-dicyano-p-benzoquinone (DDQ), and tetracyanoquinodimethane (TCNQ) have been studied spectrophotometrically in dichloromethane at room temperature. The stoichiometries of the complexes were found to be 1 : 1 ratio by the Job Method between mirtazapine and the acceptors. The equilibrium constants and thermodynamic parameters of the complexes were determined by the Benesi-Hildebrand and Van't Hoff equations. Mirtazapine in pure and dosage form was applied in this study. The results indicate that the formation constants for the complexes depend on the nature of electron acceptors and donor. And also the spectral studies of the complexes were determined by FT-IR and NMR spectroscopy.

Insights into the effects of metal nanostructuring and oxidation on the work function and charge transfer of metal/graphene hybrids

Nanoscale ◽  
2015 ◽  
Vol 7 (30) ◽  
pp. 12868-12877 ◽  
Author(s):  
M. M. Giangregorio ◽  
W. Jiao ◽  
G. V. Bianco ◽  
P. Capezzuto ◽  
A. S. Brown ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Charge Transfer ◽  
Work Function ◽  
Spectroscopic Ellipsometry ◽  
Cvd Graphene ◽  
Non Invasive

Charge transfer between CVD graphene and thin films and nanoparticles of various sizes of Al, Ga, Au, Cu and Ag was probed by various corroborating non-invasive approaches of KPFM, Raman spectroscopy and plasmonic spectroscopic ellipsometry.

Chemical Bath Deposition of SnS Thin Films from the Solutions with Different Concentrations of Tin and Sulphur

2015 ◽  
Vol 1117 ◽  
pp. 183-186 ◽  
Author(s):  
Maria Safonova ◽  
E. Mellikov ◽  
Valdek Mikli ◽  
Karin Kerm ◽  
Naidu Revathi ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Chemical Bath Deposition ◽  
Borosilicate Glass ◽  
Room Temperature ◽  
Good Adhesion ◽  
Glass Substrates ◽  
Incomplete Coverage ◽  
Sns Thin Films ◽  
Peeling Off

The aim of the current research was to study regularities of chemical bath deposition (CBD) of tin sulphide thin films as function of tin and sulphur concentrations in the solutions. SnS thin films were deposited onto Mo-, ITO-and TO-coated glass and onto borosilicate glass substrates at room temperature for 24 hours. The concentrations of sulphur and tin (ratio 1:1) in the deposition solution were varied from 0.01 M to 0.09 M. Films were characterized by SEM and Raman spectroscopy. The structuraly best tin mono-sulphide films with good adhesion to the substrate were deposited at concentration of consituents in solution 0.03M. The films deposited at concentration of 0.01M had non-uniform and incomplete coverage of the surface on all used substrates whereas at tin and sulphur concentrations of 0.05M and higher films were peeling off of the substrate.

FT-IR Micro-Spectroscopic Studies of Several Charge-Transfer Organic Electrical Conductors

1987 ◽  
Vol 41 (8) ◽  
pp. 1377-1382 ◽  
Author(s):  
John R. Ferraro ◽  
Hau H. Wang ◽  
John Ryan ◽  
Jack M. Williams
Keyword(s):  
Hydrogen Bonding ◽  
Charge Transfer ◽  
Room Temperature ◽  
Spectroscopic Studies ◽  
Infrared Reflectance ◽  
Bending Vibration ◽  
Ft Ir ◽  
Electrical Conductors ◽  
Reflectance Measurements ◽  
Vibrational Feature

A series of infrared reflectance measurements using FT-IR Micro methods were conducted on bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF or “ET”) and bis(propylenedithio)tetrathiafulvalene (BPDT or “PT”) salts of the type (ET)2 X, where X = I3, AuCl2−, AuBr2−, AuI2−, I2Br−, IBr2, ICl2, ReO4−, ClO4−, and [Formula: see text]; and (PT)2 X, where X = I3−, IBr2−, I2Br−, and ICl2−. The technique is useful for characterizing, at room temperature, differences between β-, β′- and α′-type structures vs. α-structures. The β-, β′-, and α′-type structures show a vibrational feature at ∼1280 cm−1 which has been assigned as the -C-C-H bending vibration and is absent in the spectrum of the α-type salts. This vibration shifts toward higher frequency in going from the PT to the ET salts, and the results indicate stronger hydrogen bonding and harder lattices in the ET salts as opposed to the PT salts. This frequency shift also appears to be a function of the electronegativity of the halogen in the anion moiety of the charge-transfer salt.

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