Poly- and Oligoaniline Thin Films: Charge Transport, Optical Properties and Effect of Doping

1995 ◽  
Vol 413 ◽  
Author(s):  
J. Paloheimo ◽  
A. J. Pal ◽  
H. Stubb ◽  
P. Granholm ◽  
H. Isotalo

ABSTRACTWe report a study of the electrical and optical properties of thin films of tetraanilinobenzene (TAB) and polyaniline (PANI) deposited using the Langmuir-Blodgett (LB), layer-by-layer selfassembly and vacuum-evaporation techniques. The paper will mainly concentrate on TAB LB films, but also results for other films are presented for comparison. The optical studies of undoped TAB LB films indicate H-aggregates. Upon doping new polaronic absorption bands appear and the photoluminescence of TAB becomes quenched. Doped LB and self-assembled films can reach conductivities up to about 10−4/cm for TAB and a few S/cm for PANT. The conductivity has a temperature dependence logσ α T−1/2, suggesting variable-range hopping in a quasi-gap, possibly due to the Coulomb interactions between localized carriers.

2011 ◽  
Vol 1344 ◽  
Author(s):  
Laura J. Cote ◽  
Jaemyung Kim ◽  
Jiaxing Huang

AbstractGraphene oxide sheets have recently gained immense interest as a building block for graphene based materials and devices. Rapid developments have been made in the chemistry and applications of GO. However, assembly, too, plays a critical role in the final properties of bulk graphene based materials as it determines the microstructures of the 2D sheets. There is thus a pressing need for controllable assembly strategies. Based on the recent identification of the pH dependent surfactant-like behavior of GO sheets, we are now able to control the tiling morphologies of such sheets to produce thin films with either wrinkled or overlapped types of microstructures. This allows for the deconvolution of the effects of these two basic morphological features in the electrical and optical properties of the resulting thin films, providing a well-defined example of the processing-microstructure-properties relationship for this unique soft material building block.


RSC Advances ◽  
2021 ◽  
Vol 11 (56) ◽  
pp. 35099-35109
Author(s):  
Boaz Kalderon ◽  
Debabrata Sarkar ◽  
Krushnamurty Killi ◽  
Tamuz Danzig ◽  
Doron Azulay ◽  
...  

Layer-by-layer deposition of Si–Ti layered oxide thin films are obtained using catalytic tandem M/ALD methodology. The films exhibit optical (RI) and electrical conductivities by selecting the MLD to ALD proportion in the super cycle.


2014 ◽  
Vol 23 (4) ◽  
pp. 047805 ◽  
Author(s):  
Meng-Meng Cao ◽  
Xiao-Ru Zhao ◽  
Li-Bing Duan ◽  
Jin-Ru Liu ◽  
Meng-Meng Guan ◽  
...  

2005 ◽  
Author(s):  
Jie He ◽  
Li-bin Lin ◽  
Yong Lu ◽  
Tie-cheng Lu ◽  
Zhong-hua Liu ◽  
...  

2017 ◽  
Vol 708 ◽  
pp. 1195-1200 ◽  
Author(s):  
Weiguang Wang ◽  
Wei Zhao ◽  
Xianjin Feng ◽  
Linan He ◽  
Qiong Cao ◽  
...  

2001 ◽  
Vol 708 ◽  
Author(s):  
Keizo Kato ◽  
Futoshi Takahashi ◽  
Kazunari Shinbo ◽  
Futao Kaneko ◽  
Takashi Wakamatsu

ABSTRACTShort-circuit photocurrents (ISC) due to surface plasmon (SP) excitations have been investigated for the photoelectric cells using Langmuir-Blodgett (LB) films of merocyanine (MC) dye. The MC dye exhibits p-type conduction, and the Schottky and Ohmic contacts are obtained at the interfaces between MC LB films and Al thin films and between MC LB films and Ag thin films, respectively. Since the Schottky diodes show the photoelectric effects, the Schottky photoelectric cells have been constructed. The cells with two kinds of structures, that is, prism/Al/MC/Ag (type I) and prism/MgF2/Al/MC/Ag (type II), have been prepared. In the attenuated total reflection (ATR) method, the types I and II have the Kretschmann and both the Kretschmann and Otto configurations, respectively. SP has been resonantly excited at the interface between Ag and air for the type I and at the interfaces between MgF2 and Al between Ag and air for the type II. The ATR and the ISC properties have been simultaneously measured as a function of the incident angles of the laser beams. The peaks of the ISC have corresponded to the resonant angles of the ATR curves. The electric fields and optical absorptions in the cells have been also calculated using the dielectric constants and the film thicknesses obtained from the ATR measurements. The calculated absorptions in the MC layers as a function of the incident angles have corresponded to the results of ISC. It has been estimated that the ISC for both types I and II could be enhanced by the excitations of SP in the ATR configurations.


2010 ◽  
Vol 522 (1) ◽  
pp. 203/[503]-210/[510]
Author(s):  
V. Kažukauskas ◽  
A. Arlauskas ◽  
M. Pranaitis ◽  
O. Krupka ◽  
F. Kajzar ◽  
...  

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