High Resolution Z-Contrast Imaging and Lattice Location Analysis of Dopants in Ion-Implanted Silicon

1984 ◽  
Vol 41 ◽  
Author(s):  
S. J. Pennycook ◽  
J. Narayan ◽  
R. J. Cijlbertson ◽  
E. Fogarassy ◽  
P. E. Batson
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Spatial Resolution ◽  
Location Analysis ◽  
Contrast Imaging ◽  
Direct Imaging ◽  
Dopant Segregation ◽  
Z Contrast ◽  
Microscopy Techniques

AbstractTwo new electron microscopy techniques have been developed which greatly extend the capabilities for the micro-characterization of semiconductors. The first is a technique for the direct imaging of dopants in semiconductors, whether or not they are in solution, using Z-contrast, and the second is a technique for determining the substitutional fraction of dopant. Both techniques are capable of nanometer spatial resolution and allow the detailed study of dopant segregation, precipitation, and clustering effects.

Characterization of Grain Boundaries in Electronic Ceramics by Transmission Electron Microscopy

1981 ◽  
Vol 5 ◽  
Author(s):  
David R. Clarke
Keyword(s):  
Electron Microscopy ◽  
Boundary Layer ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Grain Boundaries ◽  
Electronic Ceramics ◽  
Transmission Electron ◽  
Zno Varistors ◽  
Microscopy Techniques

ABSTRACTThe principal high resolution transmission electron microscopy techniques used in characterizing grain boundaries in electronic ceramics are described, including those recently developed for detecting the presence of extremely thin (∼10Å) intergranular phases. The capabilities of the techniques are illustrated with examples drawn from studies of ZnO varistors, PTC BaTiO3 devices and boundary layer capacitors.

The Effect of Substrates / Ligands on Metal Nanocatalysts Investigated By Quantitative Z-Contrast Imaging and High Resolution Electron Microscopy

2005 ◽  
Vol 876 ◽  
Author(s):  
Huiping Xu ◽  
Laurent Menard ◽  
Anatoly Frenkel ◽  
Ralph Nuzzo ◽  
Duane Johnson ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Three Dimensional ◽  
High Resolution Electron Microscopy ◽  
Dark Field ◽  
Contrast Imaging ◽  
Mixed Ligands ◽  
Resolution Electron ◽  
Annular Dark Field ◽  
Z Contrast

AbstractOur direct density function-based simulations of Ru-, Pt- and mixed Ru-Pt clusters on carbon-based supports reveal that substrates can mediate the PtRu5 particles [1]. Oblate structure of PtRu5 on C has been found [2]. Nevertheless, the cluster-substrate interface interactions are still unknown. In this work, we present the applications of combinations of quantitative z-contrast imaging and high resolution electron microscopy in investigating the effect of different substrates and ligand shells on metal particles. Specifically, we developed a relatively new and powerful method to determine numbers of atoms in a nanoparticle as well as three-dimensional structures of particles including size and shape of particles on the substrates by very high angle (~96mrad) annular dark-field (HAADF) imaging [2-4] techniques. Recently, we successfully synthesize icosahedra Au13 clusters with mixed ligands and cuboctahedral Au13 cores with thiol ligands, which have been shown by TEM to be of sub-nanometer size (0.84nm) and highly monodisperse narrow distribution. X-ray absorption and UV-visible spectra indicate many differences between icosahedra and cuboctahedral Au13 cores. Particles with different ligands show different emissions and higher quantum efficiency has been found in Au11 (PPH3) SC12)2C12. We plan to deposit those ligands-protected gold clusters onto different substrates, such as, TiO2 and graphite, etc. Aforementioned analysis procedure will be performed for those particles on the substrates and results will be correlated with that of our simulations and activity properties. This approach will lead to an understanding of the cluster-substrates relationship for consideration in real applications.

“High Resolution High Voltage Electron Microscopy”

1968 ◽  
Vol 26 ◽  
pp. 326-327
Author(s):  
Benjamin M. Siegel
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Voltage ◽  
Full Potential ◽  
Contrast Imaging ◽  
High Voltage Electron Microscopy ◽  
Low Contrast ◽  
Voltage Electron ◽  
Critical Areas ◽  
High Voltage Electron

The potential advantages of high voltage electron microscopy for extending the limits of resolution and contrast in imaging low contrast objects, such as biomolecular specimens, is very great. The results of computations will be presented showing that at accelerating voltages of 500-1000 kV it should be possible to achieve spacial resolutions of 1 to 1.5 Å and using phase contrast imaging achieve adequate image contrast to observe single atoms of low atomic number.The practical problems associated with the design and utilization of the high voltage instrument are, optimistically, within the range of competence of the state of the art. However, there are some extremely important and critical areas to be systematically investigated before we have achieved this competence. The basic electron optics of the column required is well understood, but before the full potential of an instrument capable of resolutions of better than 1.5 Å are realized some very careful development work will be required. Of great importance for the actual achievement of high resolution with a high voltage electron microscope is the fundamental limitation set by the characteristics of the high voltage electron beam that can be obtained from the accelerator column.

High-resolution electron microscopy of nanostructured materials

1995 ◽  
Vol 53 ◽  
pp. 172-173
Author(s):  
M. José-Yacamán
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Grain Boundaries ◽  
Nanostructured Materials ◽  
High Resolution Electron Microscopy ◽  
Hrem Image ◽  
Small Particles ◽  
Resolution Electron ◽  
Nanophase Materials

Electron microscopy is a fundamental tool in materials characterization. In the case of nanostructured materials we are looking for features with a size in the nanometer range. Therefore often the conventional TEM techniques are not enough for characterization of nanophases. High Resolution Electron Microscopy (HREM), is a key technique in order to characterize those materials with a resolution of ~ 1.7A. High resolution studies of metallic nanostructured materials has been also reported in the literature. It is concluded that boundaries in nanophase materials are similar in structure to the regular grain boundaries. That work therefore did not confirm the early hipothesis on the field that grain boundaries in nanostructured materials have a special behavior. We will show in this paper that by a combination of HREM image processing, and image calculations, it is possible to prove that small particles and coalesced grains have a significant surface roughness, as well as large internal strain.

Atomic resolution Z-contrast imaging of bulk crystal surfaces in Scanning Reflection Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 414-415
Author(s):  
Z. L. Wang ◽  
J. Bentley
Keyword(s):  
Electron Microscopy ◽  
Elastic Scattering ◽  
Dark Field ◽  
Contrast Imaging ◽  
Crystal Lattices ◽  
Small Probe ◽  
Scanning Transmission ◽  
Annular Dark Field ◽  
Image Position ◽  
Z Contrast

The success of obtaining atomic-number-sensitive (Z-contrast) images in scanning transmission electron microscopy (STEM) has shown the feasibility of imaging composition changes at the atomic level. This type of image is formed by collecting the electrons scattered through large angles when a small probe scans across the specimen. The image contrast is determined by two scattering processes. One is the high angle elastic scattering from the nuclear sites,where ϕNe is the electron probe function centered at bp = (Xp, yp) after penetrating through the crystal; F denotes a Fourier transform operation; D is the detection function of the annular-dark-field (ADF) detector in reciprocal space u. The other process is thermal diffuse scattering (TDS), which is more important than the elastic contribution for specimens thicker than about 10 nm, and thus dominates the Z-contrast image. The TDS is an average “elastic” scattering of the electrons from crystal lattices of different thermal vibrational configurations,

High-resolution z-contrast imaging of semiconductor interfaces

1989 ◽  
Vol 47 ◽  
pp. 468-469
Author(s):  
S. J. Pennycook
Keyword(s):  
High Resolution ◽  
Phase Contrast ◽  
Contrast Imaging ◽  
Compositional Modulation ◽  
Semiconductor Interfaces ◽  
Complex Figure ◽  
Thin Region ◽  
Stem Image ◽  
Annular Detector ◽  
Z Contrast

Using a high-angle annular detector on a high-resolution STEM it is possible to form incoherent images of a crystal lattice characterized by strong atomic number or Z contrast. Figure 1 shows an epitaxial Ge film on Si(100) grown by oxidation of Ge-implanted Si. The image was obtained using a VG Microscopes' HB501 STEM equipped with an ultrahigh resolution polepiece (Cs ∽1.2 mm, demonstrated probe FWHM intensity ∽0.22 nm). In both crystals the lattice is resolved but that of Ge shows much brighter allowing the interface to be located exactly and interface steps to be resolved (arrowed). The interface was indistinguishable in the phase-contrast STEM image from the same region, and even at higher resolution the location of the interface is complex. Figure 2 shows a thin region of an MBE-grown ultrathin super-lattice (Si8Ge2)100. The expected compositional modulation would show as one bright row of dots from the 2 Ge monolayers separated by 4 rows of lighter Si columns. The image shows clearly that strain-induced interdiffusion has occurred on the monolayer scale.

HRTEM simulation of interfacial structure in amorphous multilayers

1989 ◽  
Vol 47 ◽  
pp. 466-467
Author(s):  
Margaret L. Sattler ◽  
Michael A. O'Keefe
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Cross Section ◽  
High Resolution Electron Microscopy ◽  
Interfacial Structure ◽  
Multilayer Sample ◽  
Resolution Electron ◽  
Multilayered Materials ◽  
Simulated Images

Multilayered materials have been fabricated with such high perfection that individual layers having two atoms deep are possible. Characterization of the interfaces between these multilayers is achieved by high resolution electron microscopy and Figure 1a shows the cross-section of one type of multilayer. The production of such an image with atomically smooth interfaces depends upon certain factors which are not always reliable. For example, diffusion at the interface may produce complex interlayers which are important to the properties of the multilayers but which are difficult to observe. Similarly, anomalous conditions of imaging or of fabrication may occur which produce images having similar traits as the diffusion case above, e.g., imaging on a tilted/bent multilayer sample (Figure 1b) or deposition upon an unaligned substrate (Figure 1c). It is the purpose of this study to simulate the image of the perfect multilayer interface and to compare with simulated images having these anomalies.

scholarly journals Synthesize and Characterization of Hollow Boron-Nitride Nanocages

2009 ◽  
Vol 2009 ◽  
pp. 1-4 ◽  
Author(s):  
W. S. Zhang ◽  
J. G. Zheng ◽  
W. F. Li ◽  
D. Y. Geng ◽  
Z. D. Zhang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Boron Nitride ◽  
Growth Mechanism ◽  
Spherical Shape ◽  
Amorphous Boron ◽  
Transmission Electron ◽  
Ammonia Atmosphere

The boron-nitride (BN) nanocages are synthesized by nitrogenation of amorphous boron nanoparticles at 1073 K under nitrogen and ammonia atmosphere. The BN nanocages exhibit a well-crystallized feature with nearly pentagonal or spherical shape, depending on their size. High-resolution transmission electron microscopy studies reveal that they are hollow nanocages. The growth mechanism of the BN nanocages is proposed.

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