Structural Relaxation of Densified Silica Glass by Thermal Annealing

1995 ◽  
Vol 407 ◽  
Author(s):  
Naoyuki Kitamura ◽  
Kohei Fukumi ◽  
Masaki Makihara ◽  
Hiroshi Yamashita

ABSTRACTThermal relaxation of glass structure has been studied on silica glasses densified by hot isostatic pressing. Density of the glasses relaxed toward the value of an undensified glass by thermal annealing. Relaxation rates of density of the glasses were measured after the annealing at several temperatures. Fast and slow relaxation processes were found from the analysis by using a stretched exponential relaxation function Φ(t)=exp{−(t/τeffβ}). The slow process becomes dominant after the fast process. Raman scattering spectrum also has been measured through the thermal relaxation. The width of the main band at 450cm−1 increased by the annealing and recovered the value for the undensified glass after the fast process. The bands at 1060 and 1200 cm−1 shifted back to the positions for the undensified glass. The high density state(Δρ/ρ∼0.5%), however, was maintained even after the fast process. From these results, it is deduced that the fast process is due to the recovery of the O3Si-O-SiO3 tilt angle and Si-O-Si bond angle to the mean values for the undensified glass.

2000 ◽  
Vol 07 (05n06) ◽  
pp. 571-575
Author(s):  
A. ICHIMIYA ◽  
K. HAYASHI

Isolated three-dimensional (3D) silicon mounds on the Si (111)(7×7) surface have been produced using the tip of a scanning tunneling microscope (STM) at temperatures between 700 K and 750 K. Thermal relaxation processes of the mounds have been investigated by a temperature-variable STM. The 3D mounds formed by the STM tip are like pyramids with certain facets for both surfaces. The indices of the main facets of the mounds on the Si (111) surface are {311}, and those of the small facets are {221} or {331}. Two types of pyramids are produced on the Si (111). The pyramids with a production probability of 75% are normal stacking at the interface between the mound and the substrate, and are called type U. For mounds with a production probability of 25% which are in the twin relation of the type U mounds, there is a stacking fault at the interface, and they are called type F. The formation energy of the stacking fault is estimated from the ratio of the production probability as 4.7 meV/Å2. The decay rate of the type F mounds is about three times larger than that of the type U ones. During decomposition of the type U mounds, the facets of the pyramid are split into two parts. For the type F mounds, the pyramids decay nearly layer by layer without splitting of the facets and step bunching.


2014 ◽  
Vol 50 (78) ◽  
pp. 11462-11464 ◽  
Author(s):  
Jaume Garcia-Amorós ◽  
Marta Reig ◽  
Alba Cuadrado ◽  
Mario Ortega ◽  
Santi Nonell ◽  
...  

The novel photoswitchable bis-azo derivative reported herein shows a high temporal resolution of 2 × 108 times between the thermal relaxation rates of its two constituting photochromes.


2000 ◽  
Vol 166 (1-4) ◽  
pp. 130-136
Author(s):  
T.G. Kryshtab ◽  
O.S. Lytvyn ◽  
P.M. Lytvyn ◽  
I.V. Prokopenko

Author(s):  
Р.А. Кастро ◽  
Н.И. Анисимова ◽  
А.А. Кононов

AbstractThe results of studying dielectric relaxation processes in the Ge_28.5Pb_15S_56.5 glassy system are presented. The existence of the non-Debye relaxation process caused by the distribution of relaxors over the relaxation time according to the Cole–Cole model is revealed. The energy and structural parameters are calculated: the activation energy E _ p = 0.40 eV and the molecular dipole moment μ = 1.08 D. The detected features are explained within the model according to which the chalcogenide-glass structure is a set of dipoles formed by charged defects such as D ^+ and D ^–.


Author(s):  
Lyudmila P. Lyakhova ◽  
Anjelika V. Belaventseva ◽  
Roman V. Romashko ◽  
Yuri N. Kulchin ◽  
Alexei A. Kamshilin ◽  
...  

2019 ◽  
Vol 99 (2) ◽  
Author(s):  
D. S. P. Salazar ◽  
A. M. S. Macêdo ◽  
G. L. Vasconcelos

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