Non-Destructive Characterisation of Rapid Thermally Annealed N+-Doped Polysilicon Using Spectroscopic Ellipsometry

1995 ◽  
Vol 406 ◽  
Author(s):  
R. T. Carline ◽  
W. Y. Leong ◽  
A. G. Cullis ◽  
M. R. Houlton ◽  
D. A. Hope
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Spectroscopic Ellipsometry ◽  
Impurity Distribution ◽  
Refractive Indices ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Non Destructive ◽  
Secondary Ion ◽  
Anneal Temperature

AbstractThe use of spectroscopic ellipsometry (SE) to characterise the effects of rapid thermal annealing on Si implanted with phosphorous and phosphorous with fluorine are presented. Variations in the measured SE spectra with anneal temperature and presence/absence of fluorine are clearly observed. Spectra are successfully modelled using refractive indices which are graded with depth. Comparison with cross-sectional transmission-electron microscopy and secondary ion mass spectroscopy show that the results can be correlated with both the crystallinity and impurity distribution in the poly-Si.

Effects of Implant Temperature on Disordering of AlAs-GaAs Superlattices

1986 ◽  
Vol 77 ◽  
Author(s):  
E. A. Dobisz ◽  
B. Tell ◽  
H. G. Craighead ◽  
S. A. Schwarz ◽  
M. C. Tamargo ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Sectional ◽  
Bulk Gaas ◽  
Directional Diffusion ◽  
Transmission Electron ◽  
Silicon Impurity ◽  
Secondary Ion ◽  
Mass Spectro ◽  
Superlattice Period

ABSTRACTThe effect of implant temperature, superlattice period, and directional diffusion has been studied for silicon impurity-enhanced compositional disordering of GaAs-AlAs superlattices (SL) of 9 ran and 16 nm period. The SL were implanted with Si at temperatures of 483 K, 293 K, and 77 K, with an energy of 100 keV and dose of 2.5 × 1014 cm-2. These were examined by cross-sectional transmission electron microscopy and secondary ion mass spectro-scopy for structural and compositional information. The damage due to implantation prior to annealing is strikingly less for superlattices than for bulk GaAs. All annealed samples exhibited disordering, with the 9 nm period SL exhibiting a deeper disordered region than the 16 nm SL. The greatest enhancement was found in the 9 nm period SL implanted at 77 K, in which the disordering extended from a depth of 25 nm to =300 nm. The mixing was found to be anisotropie, with the SL mixing propagating greater in depth than in the lateral directions. The result has important implications for high resolution patterning possibilities with this method.

Can carbon-implanted silicon be applied as wide-bandgap emitter?

1996 ◽  
Vol 11 (7) ◽  
pp. 1653-1658 ◽  
Author(s):  
D. J. Oostra ◽  
J. Politiek ◽  
C. W. T. Bulle-Lieuwma ◽  
D. E. W. Vandenhoudt ◽  
P. C. Zalm
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Secondary Ion Mass Spectrometry ◽  
Nanocrystalline Material ◽  
Wide Bandgap ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Anneal Temperature

We examine the formation of Si1-xCx (x = 0.04–0.2) by means of CFy (y = 0,1,3) implantation in p-type Si, for application as a wide-bandgap emitter in a Si heterojunc-tion bipolar transistor. Upon implantation with 2.5 × 1016 CF+/cm2 at 45 keV, and subsequently with 2.5 × 1016 C+/cm2 at 30 keV, an amorphous top layer is formed. Annealing at temperatures up to 900 °C leads to a layer consisting of nanocrystalline material. High resolution transmission electron microscopy and secondary ion mass spectrometry show that a well-defined nanocrystalline/crystalline interface is created at an anneal temperature of 550 °C. At higher temperatures lattice defects start to develop. Preliminary attempts to dope the material via phosphorus or arsenic implantation indicate that temperatures of at least 900 °C are required to activate a fraction of the implanted dopants. This, however, adversely affects the adlayer/substrate interface.

Buried oxide layers formed by low-dose oxygen implantation

1992 ◽  
Vol 7 (4) ◽  
pp. 788-790 ◽  
Author(s):  
S. Nakashima ◽  
K. Izumi
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Breakdown Voltage ◽  
Low Dose ◽  
Annealing Temperature ◽  
Cross Sectional ◽  
Oxide Layers ◽  
Buried Oxide ◽  
Transmission Electron ◽  
Anneal Temperature

The structure of buried oxide layers formed by low-dose 16O+ implantation of 0.4 and 0.7 × 1018 cm−2 at 180 keV and by subsequent annealing in the temperature range of 1150 to 1350 °C has been investigated using cross-sectional transmission electron microscopy (XTEM). At a dose of 0.4 × 1018 cm−2, an 80-nm continuous uniform buried oxide layer having a breakdown voltage of approximately 40 V is formed after annealing at 1350 °C. At a dose of 0.7 × 1018 cm−2, multiple buried oxide layers having Si islands between them are formed at an anneal temperature of 1150 °C. The number of multiple layers is reduced as the annealing temperature increases, but the Si islands do not dissolve even after annealing at 1350 °C. The existence of the Si islands causes the breakdown voltage to fall to 0 V despite the higher dose.

Microstructure of laser-irradiated, conducting Kapton polyimide

1995 ◽  
Vol 53 ◽  
pp. 502-503
Author(s):  
D. L. Callahan ◽  
Z. Ball ◽  
H. M. Phillips ◽  
R. Sauerbrey
Keyword(s):  
Electron Microscopy ◽  
Phase Transition ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Film Surface ◽  
Cross Sectional ◽  
General Utility ◽  
Transmission Electron ◽  
Considerable Debate ◽  
Potential Applications

Ultraviolet laser-irradiation can be used to induce an insulator-to-conductor phase transition on the surface of Kapton polyimide. Such structures have potential applications as resistors or conductors for VLSI applications as well as general utility electrodes. Although the percolative nature of the phase transformation has been well-established, there has been little definitive work on the mechanism or extent of transformation. In particular, there has been considerable debate about whether or not the transition is primarily photothermal in nature, as we propose, or photochemical. In this study, cross-sectional optical microscopy and transmission electron microscopy are utilized to characterize the nature of microstructural changes associated with the laser-induced pyrolysis of polyimide.Laser-modified polyimide samples initially 12 μm thick were prepared in cross-section by standard ultramicrotomy. Resulting contraction in parallel to the film surface has led to distortions in apparent magnification. The scale bars shown are calibrated for the direction normal to the film surface only.

Ion thinning of integrated circuit transverse specimens for transmission electron microscopy

1992 ◽  
Vol 50 (2) ◽  
pp. 1426-1427
Author(s):  
F. Shaapur
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Integrated Circuit ◽  
Substrate Surface ◽  
Homogeneous Material ◽  
Material System ◽  
Ion Milling ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Motion Profile

Non-uniform ion-thinning of heterogenous material structures has constituted a fundamental difficulty in preparation of specimens for transmission electron microscopy (TEM). A variety of corrective procedures have been developed and reported for reducing or eliminating the effect. Some of these techniques are applicable to any non-homogeneous material system and others only to unidirectionalfy heterogeneous samples. Recently, a procedure of the latter type has been developed which is mainly based on a new motion profile for the specimen rotation during ion-milling. This motion profile consists of reversing partial revolutions (RPR) within a fixed sector which is centered around a direction perpendicular to the specimen heterogeneity axis. The ion-milling results obtained through this technique, as studied on a number of thin film cross-sectional TEM (XTEM) specimens, have proved to be superior to those produced via other procedures.XTEM specimens from integrated circuit (IC) devices essentially form a complex unidirectional nonhomogeneous structure. The presence of a variety of mostly lateral features at different levels along the substrate surface (consisting of conductors, semiconductors, and insulators) generally cause non-uniform results if ion-thinned conventionally.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

Post Oxidation Anneal and Re-Oxidation Effects in 5 nm SiO2 Films

1986 ◽  
Vol 76 ◽  
Author(s):  
L. Dori ◽  
M. Arienzo ◽  
Y. C. Sun ◽  
T. N. Nguyen ◽  
J. Wetzel
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Dioxide ◽  
Oxygen Vacancies ◽  
Interface Roughness ◽  
Cross Sectional ◽  
Oxide Charge ◽  
Transmission Electron ◽  
Redistribution Of Hydrogen ◽  
Transmission Electron Microscopy Cross

ABSTRACTUltrathin silicon dioxide films, 5 nm thick, were grown in a double-walled furnace at 850°C in dry O2. A consistent improvement in the electrical properties is observed following the oxidation either with a Post-Oxidation Anneal (POA) at 1000°C in N2 or with the same POA followed by a short re-oxidation (Re-Ox) step in which 1 nm of additional oxide was grown. We attribute these results to the redistribution of hydrogen and water related groups as well as to a change in the concentration of sub-oxide charge states at the Si-SiO2 interface. A further improvement observed after the short re-oxidation step had been attributed to the filling of the oxygen vacancies produced during the POA. High resolution Transmission Electron Microscopy cross-sectional observations of the Si-iSO2 interface have evidenced an increase in the interface roughness after the thermal treatment at high temperature. These results are in agreement with recent XPS data.

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