Interface Stresses in Nanostructured Multilayered Materials

1995 ◽  
Vol 405 ◽  
Author(s):  
R. C. Cammarata ◽  
K. Sieradzki
Keyword(s):  
Simple Model ◽  
Mechanical Behavior ◽  
Nanostructured Materials ◽  
Interface Stress ◽  
Solid Surfaces ◽  
Thermodynamic Quantities ◽  
Surface And Interface ◽  
Surfaces And Interfaces ◽  
Multilayered Materials

AbstractSurface and interface stresses, which are intrinsic thermodynamic quantities associated with all types of solid surfaces and interfaces are reviewed. A simple model for one type of interface stress is presented. These stresses can strongly influence the structure and mechanical behavior of nanostructured materials such as multilayered materials withultrathin layer thicknesses.

scholarly journals Nanoparticles and the influence of interface elasticity

2008 ◽  
Vol 35 (1-3) ◽  
pp. 267-286 ◽  
Author(s):  
Mi Changwen ◽  
Demitris Kouris
Keyword(s):  
Material Properties ◽  
Axial Symmetry ◽  
Outer Boundary ◽  
Elastic Field ◽  
Interface Stress ◽  
Axially Symmetric ◽  
Displacement Potential ◽  
Surface And Interface ◽  
Stress Effects ◽  
Interface Elasticity

In this manuscript, we discuss the influence of surface and interface stress on the elastic field of a nanoparticle, embedded in a finite spherical substrate. We consider an axially symmetric traction field acting along the outer boundary of the substrate and a non-shear uniform eigenstrain field inside the particle. As a result of axial symmetry, two Papkovitch-Neuber displacement potential functions are sufficient to represent the elastic solution. The surface and interface stress effects are fully represented utilizing Gurtin and Murdoch's theory of surface and interface elasticity. These effects modify the traction-continuity boundary conditions associated with the classical continuum elasticity theory. A complete methodology is presented resulting in the solution of the elastostatic Navier's equations. In contrast to the classical solution, the modified version introduces additional dependencies on the size of the nanoparticles as well as the surface and interface material properties.

A simple model of the mechanical behavior of ceramic-like materials

1992 ◽  
Vol 29 (24) ◽  
pp. 3185-3200 ◽  
Author(s):  
H.Costa Mattos ◽  
M. Fremond ◽  
E.N. Mamiya
Keyword(s):  
Simple Model ◽  
Mechanical Behavior

Theory of Defects, Doping, Surfaces and Interfaces in Wide Gap Nitrides

1996 ◽  
Vol 423 ◽  
Author(s):  
J. Bernholc ◽  
P. Boguslawski ◽  
E. L. Briggs ◽  
M. Buongiorno Nardelli ◽  
B. Chen ◽  
...  
Keyword(s):  
Nearest Neighbor ◽  
Group Iv ◽  
Type I ◽  
Shallow Acceptor ◽  
Surface And Interface ◽  
Al Content ◽  
Surfaces And Interfaces ◽  
High Concentrations ◽  
P Type ◽  
High Al Content

AbstractThe results of extensive theoretical studies of group IV impurities and surface and interface properties of nitrides are presented and compared with available experimental data. Among the impurities, we have considered substitutional C, Si, and Ge. CN is a very shallow acceptor, and thus a promising p-type dopant. Both Si and Ge are excellent donors in GaN. However, in AlGaN alloys the DX configurations are stable for a sufficiently high Al content, which quenches the doping efficiency. At high concentrations, it is energetically favorable for group IV impurities to form nearest-neighbor Xcation-XN pairs. Turning to surfaces, AIN is known to exhibit NEA. We find that the NEA property depends sensitively on surface reconstruction and termination. At interfaces, the strain effects on the band offsets range from 20% to 40%, depending on the substrate. The AIN/GaN/InN interfaces are all of type I, while the A10.5Ga0.5 N/A1N zinc-blende (001) interface may be of type II. Further, the calculated bulk polarizations in wurtzite AIN and GaN are -1.2 and -0.45 μC/cm2, respectively, and the interface contribution to the polarization in the GaN/AlN wurtzite multi-quantum-well is small.

FREE-ELECTRON LASER SPECTROSCOPY OF SURFACES AND INTERFACES

1995 ◽  
Vol 02 (04) ◽  
pp. 501-512 ◽  
Author(s):  
N.H. TOLK ◽  
J.T. MCKINLEY ◽  
G. MARGARITONDO
Keyword(s):  
Synchrotron Radiation ◽  
Free Electron ◽  
Free Electron Laser ◽  
Interface Energy ◽  
Free Electron Lasers ◽  
Semiconductor Interface ◽  
X Ray ◽  
Surface And Interface ◽  
Surfaces And Interfaces ◽  
Radiation Sources

Synchrotron-radiation sources have become, since the late 1960’s, one of the fundamental experimental tools for surface and interface research. Only recently, however, a related type of photon sources - the free-electron lasers (FELs) — has begun to make important contributions to this field. For example, FELs have been used to reach unprecedented levels of accuracy and reliability in measuring semiconductor interface energy barriers. We review some of the present and proposed experiments that are made possible by the unmatched brightness and broad tunability of infrared FELs. Practical examples discussed in the review are supplied by our own programs at the Vanderbilt Free-Electron Laser. We also briefly analyze the possible future development of FELs and of their applications to surface and interface research, in particular, the possibility of x-ray FELs.

INTRINSIC SURFACE AND INTERFACE STRESS OF LOW-DIMENSIONAL CRYSTALS

2002 ◽  
Vol 16 (01n02) ◽  
pp. 64-70 ◽  
Author(s):  
Q. JIANG ◽  
D. S. ZHAO ◽  
M. ZHAO
Keyword(s):  
Theoretical Consideration ◽  
Size Dependence ◽  
Interface Energy ◽  
Liquid Interface ◽  
Interface Stress ◽  
Surface And Interface ◽  
Low Dimensional ◽  
Solid Liquid Interface ◽  
Solid Liquid ◽  
Theoretical Results

Based on the theoretical consideration on the size-dependence of solid-liquid interface energy, a model for the intrinsic interface stress of metallic, ionic and semiconductor nanosolid has been developed, free from adjustable parameters. Modeling predictions agree well with experimental observations and other theoretical results.

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