Formation of Intensive Photoluminescence in Porous Silicon

1995 ◽  
Vol 405 ◽  
Author(s):  
V. A. Makara ◽  
M. S. Boltovets ◽  
O. V. Vakulenko ◽  
O. I. Datsenko ◽  
O. V. Rudenko
Keyword(s):  
Porous Silicon ◽  
Quantum Yield ◽  
Rhodamine 6G ◽  
Mechanical Stresses ◽  
Pl Spectra ◽  
Pl Intensity

AbstractPhotoluminescence (PL) spectra of porous silicon (PS) samples are studied. Effect of mechanical stresses in substrate on PL intensity is shown. The quantum yield (QY) of PS luminescence is estimated by comparing PL spectra of PS and rhodamine 6G.

scholarly journals Si/SiO2 Core/Shell Luminescent Silicon Nanocrystals and Porous Silicon Powders With High Quantum Yield, Long Lifetime, and Good Stability

2019 ◽  
Vol 7 ◽  
Author(s):  
Bernard Gelloz ◽  
Firman Bagja Juangsa ◽  
Tomohiro Nozaki ◽  
Koji Asaka ◽  
Nobuyoshi Koshida ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Quantum Yield ◽  
Silicon Nanocrystals ◽  
Good Stability ◽  
Core Shell ◽  
High Quantum Yield ◽  
High Quantum ◽  
Long Lifetime

scholarly journals Influence of Oxidation on Temperature-Dependent Photoluminescence Properties of Hydrogen-Terminated Silicon Nanocrystals

Crystals ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 143
Author(s):  
Batu Ghosh ◽  
Naoto Shirahata
Keyword(s):  
Silicon Nanocrystals ◽  
Surface Oxidation ◽  
Ambient Air ◽  
Temperature Dependent ◽  
Pl Spectra ◽  
Three Samples ◽  
Peak Energy ◽  
Pl Intensity ◽  
Different Levels ◽  
Temperature Dependent Photoluminescence

In this study, we investigate temperature-dependent photoluminescence (PL) in three samples of hydrogen-terminated silicon nanocrystals (ncSi-H) with different levels of surface oxidation.ncSi-H was oxidized by exposure to ambient air for 0 h, 24 h, or 48 h. The PL spectra as a function of temperature ranging between room temperature (~297 K) and 4 K are measured to elucidate the underlying physics of the PL spectra influenced by the surface oxidation of ncSi-H. There are striking differences in the evolution of PL spectra according to the surface oxidation level. The PL intensity increases as the temperature decreases. ForncSi-H with a smaller amount of oxide, the PL intensity is nearly saturated at 90 K. In contrast, the PL intensity decreases even below 90 K for the heavilyoxidized ncSi-H. For all the samples, full-width at half maxima (FWHM)decreases as the temperature decreases. The plots of the PL peak energy as a function of temperature can be reproduced with an equation where the average phonon energy and other parameters are calculated.

Light Controlled Photoluminescence Relaxation in Porous Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
R. Czaputa ◽  
R. Fritzl ◽  
A. Popitsch
Keyword(s):  
Porous Silicon ◽  
Chemical Structure ◽  
Room Temperature ◽  
Relaxation Effect ◽  
Ambient Atmosphere ◽  
Surface Chemical ◽  
Dangling Bond ◽  
Nanoporous Silicon ◽  
Pl Intensity ◽  
Modification Of The Surface

ABSTRACTWe report results of photoluminescence (PL), FTIR and ESR investigations on nanoporous silicon (PS) where a reversible PL intensity relaxation effect in the chemically oxidised material is observed. To be activated the effect needs, however, additional preparation steps including light irradiation and ageing in ambient atmosphere. After illumination with visible light, the PL intensity is remarkably diminished. However it recovers in the dark within the time scale of minutes to hours under ambient atmosphere at room temperature. This cycle can be repeated several times. We show that the variation of the PL intensity is anticorrelated to an ESR signal attributed to silicon dangling bonds. From the IR spectrum, however, no significant change of the pore surface chemical structure can be observed during a cycle. Therefore we conclude that the variation of the PL intensity is rather controlled by a metastable change in the number of dangling bond centers than by modification of the surface chemistry in the porous silicon system.

Structure and Optical Properties of Porous Silicon Formed on Silicon Substrates Treated with Compression Plasma Flow

2015 ◽  
Vol 245 ◽  
pp. 49-54
Author(s):  
Mikhail Victorovich Bozhenko ◽  
Evgeniy Anatolievich Chusovitin ◽  
Nikolay Gennadievich Galkin ◽  
Evgeny Vladislavovich Pustovalov ◽  
Vladimir Vadimovich Tkachev ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Plasma Flow ◽  
Wavelength Region ◽  
Peak Position ◽  
Silicon Substrates ◽  
Intensity Increase ◽  
Long Wavelength ◽  
Bond Density ◽  
Compression Plasma Flow ◽  
Pl Intensity

Porous silicon layers were formed on the silicon substrates treated with compression plasma flow. Pores density and lateral size on substrates treated with plasma is by 25% more than that on untreated substrates. The intensity of the PL of the PS layers, formed on the plasma treated substrates (PT PS), is twice more than that of the PS layers, formed on untreated substrates. Three month exposure of normal PS and PT PS layers to the air leads to the PL intensity increase by 3 and 5.7 times, respectively, as well as to the peak position shifting towards long wavelength region by 3.1 nm, in the case of PT PS layer. The PL intensity increase is attributable to the reduction of the dangling bond density as a result of passivation by oxygen.

Spectra and quantum yield of phosphorescence of rhodamine 6G solutions at 77�K

1974 ◽  
Vol 20 (5) ◽  
pp. 604-607 ◽  
Author(s):  
V. A. Kuznetsov ◽  
N. I. Kunavin ◽  
V. N. Shamraev
Keyword(s):  
Quantum Yield ◽  
Rhodamine 6G

Effect of soap on the fluorescent lifetime and quantum yield of rhodamine 6G in water

1973 ◽  
Vol 7 (3) ◽  
pp. 191-192 ◽  
Author(s):  
R.R. Alfano ◽  
S.L. Shapiro ◽  
W. Yu
Keyword(s):  
Quantum Yield ◽  
Rhodamine 6G

Influence of AgNO3 on Photoluminescence Properties of Porous Silicon

2012 ◽  
Vol 486 ◽  
pp. 239-242 ◽  
Author(s):  
Hong Yan Zhang ◽  
Xiao Yi Lv ◽  
Zhen Hong Jia
Keyword(s):  
Silver Nanoparticles ◽  
Porous Silicon ◽  
Specific Surface ◽  
Room Temperature ◽  
Photoluminescence Properties ◽  
Pl Intensity ◽  
Made In

Porous silicon (PS) has the strong photoluminescence (PL) at room temperature and high specific surface. In this paper, we have fabricated the PS coated with silver nanoparticles as a substrate. The result shows that the substrate made in this way is stable for more than twenty days and the strong PL intensity of PS is around 584nm after immersed into solution of AgNO3. The formation of SiAg bond was demonstrated to be responsible for the improvement of PL properties.

scholarly journals Enhanced quantum yield of photoluminescent porous silicon prepared by supercritical drying

2016 ◽  
Vol 108 (15) ◽  
pp. 153111 ◽  
Author(s):  
Jinmyoung Joo ◽  
Thomas Defforge ◽  
Armando Loni ◽  
Dokyoung Kim ◽  
Z. Y. Li ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Quantum Yield ◽  
Supercritical Drying
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