Characteristics of a Reactively Sputtered Indium Tin Oxide Thin Film Strain Gage for Use at Elevated Temperatures

1995 ◽  
Vol 403 ◽  
Author(s):  
Otto J. Gregory ◽  
Stephen E. Dyer ◽  
Paul S. Amons ◽  
Arnout Bruins SLOT
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Strain Sensors ◽  
Dynamic Strain ◽  
Strain Gages ◽  
Ito Thin Films ◽  
Ito Films

AbstractStrain sensors based on thin films of indium tin oxide (ITO) have been developed for a variety of applications, where the measurement of both static and dynamic strain are required at elevated temperatures. ITO thin films were prepared by rf reactive sputtering in Ar:02 mixtures from high density, electrically conductive targets having a nominal composition of 90% In203 and 10% Sn02. The resulting ITO films exhibited room temperature resistivities between 2x10−2 and 2x102 ω cm, an optical bandgap of 3.5 ev and tested “n” type by hot probe. These same films exhibited large negative gage factors (G=δρ/ ρδε) when tested at room temperature and a relatively low temperature coefficient of resistance when tested at elevated temperature in air. Specifically, gage factors approaching -100 with little hysteresis were observed for strains up to 700 μin/in and TCR's as low as 195 ppm/°C have been measured for the sputtered ITO films. In addition, these films were electrically stable and readily formed ohmic contacts with platinum at temperatures up to 1180°C. In this paper, we report on the electrical properties and piezoresistive properties of ITO based strain gages at temperatures up to 1180°C. Prospects of using ITO thin films as the active strain elements in high temperature strain gages and the characteristics of strain sensors based on ITO are discussed.

scholarly journals Rapid thermal annealing for high-quality ITO thin films deposited by radio-frequency magnetron sputtering

2019 ◽  
Vol 10 ◽  
pp. 1511-1522 ◽  
Author(s):  
Petronela Prepelita ◽  
Ionel Stavarache ◽  
Doina Craciun ◽  
Florin Garoi ◽  
Catalin Negrila ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rapid Thermal Annealing ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray ◽  
Ito Thin Films ◽  
Ito Films

In this work, rapid thermal annealing (RTA) was applied to indium tin oxide (ITO) films in ambient atmosphere, resulting in significant improvements of the quality of the ITO films that are commonly used as conductive transparent electrodes for photovoltaic structures. Starting from a single sintered target (purity 99.95%), ITO thin films of predefined thickness (230 nm, 300 nm and 370 nm) were deposited at room temperature by radio-frequency magnetron sputtering (rfMS). After deposition, the films were subjected to a RTA process at 575 °C (heating rate 20 °C/s), maintained at this temperature for 10 minutes, then cooled down to room temperature at a rate of 20 °C/s. The film structure was modified by changing the deposition thickness or the RTA process. X-ray diffraction investigations revealed a cubic nanocrystalline structure for the as-deposited ITO films. After RTA, polycrystalline compounds with a textured (222) plane were observed. X-ray photon spectroscopy was used to confirm the beneficial effect of the RTA treatment on the ITO chemical composition. Using a Tauc plot, values of the optical band gap ranging from 3.17 to 3.67 eV were estimated. These values depend on the heat treatment and the thickness of the sample. Highly conductive indium tin oxide thin films (ρ = 7.4 × 10−5 Ω cm) were obtained after RTA treatment in an open atmosphere. Such films could be used to manufacture transparent contact electrodes for solar cells.

Room-temperature preparation of biaxially textured indium tin oxide thin films with ion-beam-assisted deposition

2003 ◽  
Vol 18 (2) ◽  
pp. 442-447 ◽  
Author(s):  
Karola Thiele ◽  
Sibylle Sievers ◽  
Christian Jooss ◽  
Jörg Hoffmann ◽  
Herbert C. Freyhardt
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Film Growth ◽  
Texture Evolution ◽  
Ion Beam ◽  
High Temperature Superconductors ◽  
Buffer Layers ◽  
Ito Thin Films

Biaxially aligned indium tin oxide (ITO) thin films were prepared by an ion-beamassisted deposition (IBAD) process at room temperature. Films with a transmittance at 550 nm of 90% and an electrical resistivity of 1.1 × 10−3 Ωcm for 300 and 250 nm thickness were obtained. Investigations of the texture evolution during IBAD film growth were carried out and compared to the well-established texture development in yttria-stabilized zirconia. An in-plane texture of 12.6° full width at half-maximum (FWHM) for a 1-μm-thick IBAD-ITO film was achieved. The quality of these films as electrically conductive buffer layers for YBa2Cu3O7-δ (YBCO) high-temperature superconductors was demonstrated by the subsequent deposition of high-currentcarrying YBCO films by thermal co-evaporation using a 3–5-nm-thick Y2O3 interlayer.A Jc of 0.76 MA/cm2 (77K, 0 T) was obtained for a 1 × 1 cm sample with ITO of 20° FWHM.

scholarly journals Evaluation of electrical resistivity, residual stress and surface roughness of sputtering indium tin oxide films with different thicknesses

2021 ◽  
Vol 51 (4) ◽  
Author(s):  
Chuen-Lin Tien ◽  
Tsai-Wei Lin ◽  
Shu-Hui Su
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Surface Roughness ◽  
Electrical Resistivity ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Measurement Results ◽  
Ito Thin Films ◽  
Tin Oxide Films ◽  
Ito Films

This paper investigates the influence of film thickness on the electrical and mechanical properties of transparent indium tin oxide (ITO) thin films. Two groups of ITO thin films deposited on unheated substrates were prepared by the radio-frequency magnetron sputtering technique. The biaxial residual stress and surface roughness for two groups of ITO thin films were measured by a Twyman–Green interferometer and a Linnik microscopic interferometer, respectively. The electrical resistivity of the ITO films was measured by a four-point probe apparatus, the thickness was determined mechanically with a profilometer. The measurement results show that the average resistivity of ITO thin films decreases with increasing the deposited thickness. The compressive residual stress in the ITO thin films decreases with increasing the deposited thickness. We also find that an anisotropic stress in the two groups of ITO films is more compressive in a certain direction. The RMS surface roughness in the two groups of ITO films is less than 1 nm.

Improvement of Structural, Electrical, and Optical Properties of Sol–Gel-Derived Indium–Tin-Oxide Films by High Efficiency Microwave Irradiation

2021 ◽  
Vol 21 (3) ◽  
pp. 1875-1882
Author(s):  
Sung-Hun Kim ◽  
Won-Ju Cho
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Microwave Irradiation ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Microwave Power ◽  
Sol Gel ◽  
Electrical And Optical Properties ◽  
Ito Thin Films ◽  
Ito Films

Herein, indium–tin-oxide (ITO) thin films are prepared by a solution-based spin-coating process followed by a heat-treatment process with microwave irradiation (MWI). The structural, electrical and optical properties of the films are investigated. The properties of the microwave-irradiated sol–gel ITO films are compared with those of as-spun ITO films and sol–gel ITO films subjected to conventional furnace annealing (CFA) or a rapid thermal process (RTP). After microwave irradiation, the sol–gel ITO thin films are found to have crystallized, and they indicate enhanced conductivity and transparency. Furthermore, the resistances of the ITO films are decreased considerably at increased microwave power levels, and the resistivity of the films almost saturate even at a low microwave power of 500 W. The improved physical properties of the MW-irradiated samples are mainly due to the increase in the electron concentration of the ITO films and the increase in the carrier mobility after MWI.

Stabilization of Indium Tin Oxide Films to Very High Temperatures

2002 ◽  
Vol 751 ◽  
Author(s):  
Otto J. Gregory ◽  
Tao You ◽  
Michael Platek ◽  
Everett Crisman
Keyword(s):  
Interfacial Reaction ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Temperature Stability ◽  
Binding Energies ◽  
Dynamic Strain ◽  
Strain Gages ◽  
High Temperature Stability ◽  
Electrical Stability ◽  
Ito Films

SummaryThin film strain gages based on indium-tin-oxide (ITO) are being developed to measure to static and dynamic strain at temperatures approaching 1500°C. These ceramic strain gages exhibit excellent oxidation resistance and high temperature stability, surviving more than 25 hours of testing in air at 1470°C. Electron spectroscopy for chemical analysis (ESCA) studies indicated that interfacial reactions between ITO and alumina can increase the stability of ITO at elevated temperature. Solid state diffusion of aluminum into the ITO at these temperatures can produce a very stable ITO/Al2O3 solid solution [1, 2]. To determine the nature of the interfacial reaction product, ITO films were deposited onto both Al2O3 and AlN surfaces and thermally cycled to 1500°C. AlN films were used to reduce/eliminate oxygen transport to the interface, so that aluminum-indium interactions alone could be studied. ITO films were deposited onto Al2O3 and AlN films, which were rf sputtered on platinum-coated alumina substrates. The resulting ESCA depth files showed that an interfacial reaction had occurred between the ITO and the Al2O3 and AlN. The presence of two new indium-indium peaks at 448.85 and 456.40eV, corresponding to the indium 3d5 and 3d3 binding energies were observed in both cases; i.e. the AlN and the Al2O3. These binding energies are significantly higher than those associated with stoichiometric indium oxide. In addition, aluminum doped ITO films were formed by co-sputtering from multiple targets and electrical stability of these films was compared to undoped ITO films over the same temperature range (25–1500°C) [1–4].

scholarly journals Indium Saving Indium Tin Oxide Thin Films Deposited by Sputtering at Room Temperature

2017 ◽  
Vol 18 (1) ◽  
pp. 69-74
Author(s):  
Leandro Voisin ◽  
Makoto Ohtsuka ◽  
Takashi Nakamura ◽  
S. Petrovska ◽  
B. Ilkiv ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Heat Treatment Temperature ◽  
Room Temperature ◽  
Visible Region ◽  
Treatment Temperature ◽  
Sputtering Deposition ◽  
Ito Thin Films

Indium saving indium tin oxide ITO thin films have been deposited using a sputtering deposition technique in pure Ar and in mixed argon-oxygen atmosphere at room temperature. A transmittance value of more than 85 % in the visible region of the spectrum and a resistivity of 2420 µΩcm has been obtained for the thin films deposited in pure Ar and subsequently heat treated at 923 K. The structure of the as-deposited indium saving indium-tin oxide films was amorphous and the crystallinity was improved with increasing heat treatment temperature. An increase in the heat treatment temperature does not enhance the transmittance of the films at oxygen flow rate higher than 0.4 cm3/min.

Optical and Electrical Properties of Indium Tin Oxide (ITO) Thin Films Prepared by Thermal Evaporation Method on Polyethylene Terephthalate (PET) Substrate

2012 ◽  
Vol 545 ◽  
pp. 393-398 ◽  
Author(s):  
Mohammed Khalil Mohammed Ali ◽  
K. Ibrahim ◽  
M.Z. Pakhuruddin ◽  
M.G. Faraj
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Optical Transmission ◽  
Thermal Evaporation ◽  
Optical And Electrical Properties ◽  
Thermal Evaporation Method ◽  
Ito Thin Films ◽  
Ito Films

This work describe the optical and electrical properties of indium tin oxide (ITO) thin films prepared by thermal evaporation method on flexible plastic substrate (polyethylene terephthalate (PET)). The optical transmission and absorption of ITO films in the visible and UV rang have been studied. The resistivity, sheet resistant, carrier concentration and mobility have been evaluated by Hall Effect measurement. The surface morphology and roughness were investigated by atomic force microscopy (AFM). The results indicate that the optical transmission greater than 85% over the visible rang and it was found to be strongly dependent on the thickness of ITO films. The Resistivity and sheet resistant with low values (10-4Ω-cm, 9.22 Ω/ respectively) were obtained and ties values were increased with ITO thin films thickness increasing .AFM investigation showed that the roughness surface of (8 – 30) RMS have been obtained over different thickness of ITO films. The obtained results of the deposited films by this method were analyzed. Details of sample preparation, experimental methods and results are given and discussed.

scholarly journals Improving Performance of CIGS Solar Cells by Annealing ITO Thin Films Electrodes

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Chuan Lung Chuang ◽  
Ming Wei Chang ◽  
Nien Po Chen ◽  
Chung Chiang Pan ◽  
Chung Ping Liu
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Solar Cells ◽  
Indium Tin Oxide ◽  
Copper Indium Gallium Diselenide ◽  
Glass Substrates ◽  
Ito Film ◽  
Ito Thin Films ◽  
Cigs Solar Cells ◽  
Ito Films

Indium tin oxide (ITO) thin films were grown on glass substrates by direct current (DC) reactive magnetron sputtering at room temperature. Annealing at the optimal temperature can considerably improve the composition, structure, optical properties, and electrical properties of the ITO film. An ITO sample with a favorable crystalline structure was obtained by annealing in fixed oxygen/argon ratio of 0.03 at 400°C for 30 min. The carrier concentration, mobility, resistivity, band gap, transmission in the visible-light region, and transmission in the near-IR regions of the ITO sample were-1.6E+20 cm−3,2.7E+01 cm2/Vs,1.4E-03 Ohm-cm, 3.2 eV, 89.1%, and 94.7%, respectively. Thus, annealing improved the average transmissions (400–1200 nm) of the ITO film by 16.36%. Moreover, annealing a copper-indium-gallium-diselenide (CIGS) solar cell at 400°C for 30 min in air improved its efficiency by 18.75%. The characteristics of annealing ITO films importantly affect the structural, morphological, electrical, and optical properties of ITO films that are used in solar cells.

Optical Degradation of Indium Tin Oxide Thin Films Induced by Hydrogen-Related Room Temperature Reduction

2003 ◽  
Vol 42 (Part 2, No. 5B) ◽  
pp. L546-L548 ◽  
Author(s):  
Yu Wang ◽  
Wan Ping Chen ◽  
Kei Chun Cheng ◽  
Helen Lai Wah Chan ◽  
Chung Loong Choy
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Oxide Thin Films ◽  
Temperature Reduction

scholarly journals Different electrode anodes used in OLED devices Diferentes eletrodos anodos usados em dispositivos OLEDs

2021 ◽  
Author(s):  
Emerson Roberto Santos ◽  
Thiago de Carvalho Fullenbach ◽  
Marina Sparvoli Medeiros ◽  
Luis da Silva Zambom ◽  
Roberto Koji Onmori ◽  
...  
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Threshold Voltage ◽  
Indium Tin Oxide ◽  
Light Emitting Diode ◽  
Electrical Current ◽  
High Threshold ◽  
Diamond Coatings ◽  
Ito Thin Films ◽  
Order Of Magnitude

Transparent conductive oxides (TCOs) known as indium tin oxide (ITO) and fluorine tin oxide (FTO) deposited on glass were compared by different techniques and also as anodes in organic light-emitting diode (OLED) devices with same structure. ITO produced at laboratory was compared with the commercial one manufactured by different companies: Diamond Coatings, Displaytech and Sigma-Aldrich, and FTO produced at laboratory was compared with the commercial one manufactured by Flexitec Company. FTO thin films produced at laboratory presented the lowest performance measured by Hall effect technique and also by I-V curve of OLED device with low electrical current and high threshold voltage. ITO thin films produced at laboratory presented elevated sheet resistance in comparison with commercial ITOs (approximately one order of magnitude greater), that can be related by a high number of defects as discontinuity of the chemical lattice or low crystalline structure. In the assembly of OLED devices with ITO and FTO produced at laboratory, neither presented luminances. ITO manufactured by Sigma-Aldrich company presented better electrical and optical characteristics, as low electrical resistivity, good wettability, favorable transmittance, perfect physicalchemical stability and lowest threshold voltage (from 3 to 4.5 V) for OLED devices.

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