Phase Transformation of Titanium Disilicide Induced by High-Temperature Sputtering

1995 ◽  
Vol 402 ◽  
Author(s):  
K. Fujii ◽  
R. T. Tung ◽  
D. J. Eaglesham ◽  
K. Kikuta ◽  
T. Kikkawa
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Phase Transformation ◽  
Interfacial Layer ◽  
Nucleation Density ◽  
Si Substrate ◽  
Titanium Disilicide ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Apparent Reduction

AbstractThe reaction between sputtered Ti thin films and heavily arsenic doped Si(100) is studied. The use of an arsenic implantation to pre-amorphize the Si substrate and the choice of the substrate temperature during Ti sputtering are both found to have a significant effect on subsequent TiSi2 reactions. Cross-sectional transmission electron microscopy reveals that an amorphous TiSix layer is formed at the interface between Si and as-sputtered Ti. The thickness of this interfacial layer increases with the sputtering temperature. After rapid thermal anneals in nitrogen, the sheet resistances of TiSi2 thin films grown with the pre-amorphization step and a high sputtering temperature (450°C) are generally lower than films processed under other conditions. This apparent reduction in the temperature for the polymorphic C49 to 54 phase transformation in TiSi2 is shown to originate from a higher nucleation density of the C54-TiSi2 phase. These dependencies of the silicide reaction are ascribed to the interfacial amorphous TiSix layer. In increasing the nucleation density of the C54-TiSi2 phase, the amorphous TiSix layer is speculated to either act as a direct nucleation source for the C54-TiSi2 phase, or lead to more defective C49-TiSi2 structures which facilitate the C54-TiSi2 nucleation.

Growth Temperature and Oxygen Ambient Dependency of SrTiO3/Si(100) InterfaceStructures

2001 ◽  
Vol 700 ◽  
Author(s):  
Parhat Ahmet ◽  
Takashi Koida ◽  
Mamoru Yoshimoto ◽  
Hideomi Koinuma ◽  
Toyohiro Chikyow
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Growth Temperature ◽  
Interfacial Layer ◽  
Laser Deposition ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Interface Structures

AbstractA systematical growth temperature and oxygen ambient dependency of SrTiO3/Si interface structures were investigated using a growth temperature gradient pulse laser deposition (PLD) system and cross sectional high resolution transmission electron microscopy (HRTEM). A SiO2 interfacial layer and an amorphized SrTiO3 layer were observed at the interface for the thin films grown on Si (100) at growth temperatures above 600°C. Our results show that at growth temperatures higher than 600°C, the formation of the amorphized SrTiO3 layer is strongly growth temperature and also oxygen partial pressure dependent.

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

Characterization of pulsed laser deposited MoS2 by transmission electron microscopy

1993 ◽  
Vol 8 (11) ◽  
pp. 2933-2941 ◽  
Author(s):  
S.D. Walek ◽  
M.S. Donley ◽  
J.S. Zabinski ◽  
V.J. Dyhouse
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Solid Phase ◽  
Analytical Electron Microscopy ◽  
Pulsed Laser ◽  
Cross Sectional ◽  
Aerospace Applications ◽  
Transmission Electron ◽  
Novel Method

Molybdenum disulfide is a technologically important solid phase lubricant for vacuum and aerospace applications. Pulsed laser deposition of MoS2 is a novel method for producing fully dense, stoichiometric thin films and is a promising technique for controlling the crystallographic orientation of the films. Transmission electron microscopy (TEM) of self-supporting thin films and cross-sectional TEM samples was used to study the crystallography and microstructure of pulsed laser deposited films of MoS2. Films deposited at room temperature were found to be amorphous. Films deposited at 300 °C were nanocrystalline and had the basal planes oriented predominately parallel to the substrate within the first 12–15 nm of the substrate with an abrupt upturn into a perpendicular (edge) orientation farther from the substrate. Spherically shaped particles incorporated in the films from the PLD process were found to be single crystalline, randomly oriented, and less than about 0.1 μm in diameter. A few of these particles, observed in cross section, had flattened bottoms, indicating that they were molten when they arrived at the surface of the growing film. Analytical electron microscopy (AEM) was used to study the chemistry of the films. The x-ray microanalysis results showed that the films have the stoichiometry of cleaved single crystal MoS2 standards.

scholarly journals Structural Property Study for GeSn Thin Films

Materials ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 3645
Author(s):  
Liyao Zhang ◽  
Yuxin Song ◽  
Nils von den Driesch ◽  
Zhenpu Zhang ◽  
Dan Buca ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Threading Dislocations ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

The structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge (001) by molecular beam epitaxy (MBE) and on Ge-buffered Si (001) wafers by chemical vapor deposition (CVD) were analyzed through high resolution X-ray diffraction and cross-sectional transmission electron microscopy. Two-dimensional reciprocal space maps around the asymmetric (224) reflection were collected by X-ray diffraction for both the whole structures and the GeSn epilayers. The broadenings of the features of the GeSn epilayers with different relaxations in the ω direction, along the ω-2θ direction and parallel to the surface were investigated. The dislocations were identified by transmission electron microscopy. Threading dislocations were found in MBE grown GeSn layers, but not in the CVD grown ones. The point defects and dislocations were two possible reasons for the poor optical properties in the GeSn alloys grown by MBE.

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