Temperature Dependence and Annealing Behaviour of Hf Implanted (100)Si: HfSi 2 Synthesis

1995 ◽  
Vol 402 ◽  
Author(s):  
M. R. Da Silva ◽  
A. A. Melo ◽  
J. C. Soares ◽  
M. F. Da Silva ◽  
R. Moons ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Substrate Temperature ◽  
Temperature Dependence ◽  
Subsequent Annealing ◽  
High Fluence ◽  
Annealing Behaviour

AbstractWe investigated the formation of a buried HfSi2 layer by high fluence ion implantation of isotopically mass separated 179–180 Hf+ on heated silicon (100) substrates. It is shown that for the substrate temperature of 600°C a buried HfSi 2 layer is formed. By subsequent annealing at 1000 °C a continuous 12 nm HfSi2 layer on the Si surface is formed followed by 130 nm big almost spherodized HfSi2 ellipsoid and 80 nm small HfSi2 and Si grains. The annealing of samples implanted at lower temperatures show that HfSi2 is also formed but with reduced yield. A summary of the relevant data is presented.

Temperature Dependence of the Kinetics of Silicon Amorphization by He Ion Implantation

1992 ◽  
Vol 279 ◽  
Author(s):  
L. Laânab ◽  
A. Roumili ◽  
M. M. Faye ◽  
N. Gessinn ◽  
A. Claverie
Keyword(s):  
Energy Density ◽  
Ion Implantation ◽  
Substrate Temperature ◽  
Temperature Dependence ◽  
Drastic Change ◽  
Density Model ◽  
Different Types ◽  
Higher Temperature ◽  
Kinetics Of ◽  
Critical Damage

ABSTRACTWe have studied by XTEM the kinetics of Si amorphization by light ion implantation (He) as a function of substrate temperature. The analysis of these kinetics has been performed within the framework of the “Critical Damage Energy Density” model which is shown to apply for temperatures up to 250 K. There is a drastic change in the efficiency of the amorphization process at about 175 K. These results are discussed and explained by considering the different types of defects (I, V, I2, V2, complexes…) that can be stabilized in c-Si depending on the temperature. Above 150 K, the amorphization proceeds through the accumulation of interstitials and vacancies while at higher temperature it proceeds through the accumulation of di-interstitials and di-vacancies left in the network after annihilation and recombination of the Frenkel pairs created by the bombardment.

Electronmicroscopical Study of the Formation of Iron Carbide Phases After High-fluence Carbon Ion Implantation into Iron at Low Temperatures

1998 ◽  
Vol 13 (9) ◽  
pp. 2614-2622 ◽  
Author(s):  
C Hammerl ◽  
A. Königer ◽  
B. Rauschenbach
Keyword(s):  
Ion Implantation ◽  
Iron Carbide ◽  
Subsequent Annealing ◽  
High Fluence ◽  
Carbon Ions ◽  
Cross Sectional ◽  
Carbon Ion ◽  
Carbide Phases ◽  
Structure And Morphology ◽  
Transmission Electron

Carbon ions were implanted with energies between 50 and 150 keV into thin iron layers at temperatures of –10 °C and –70 °C. Formation of iron carbide phases was studied as a function of fluence, which was varied from 1.2 × 1017 C+-ions/cm2 up to 1.4 × 1018 C+-ions/cm2. The sequence of phase transformation during subsequent annealing to temperatures of up to 450 °C was also investigated. Detailed analysis of structure and morphology was done by cross-sectional transmission electron microscopy and electron diffraction experiments. The existence of metastable iron carbide phases, θ-Fe3C, Χ-Fe5C2, η-Fe2C, and also the amorphous phase Fe(C), after high-fluence carbon ion implantation and the transformation of the formed metastable phases by subsequent annealing into the θ-Fe3C phase are demonstrated.

Conductivity of the Granular Metal Films Obtained by High Dose Ion Implantation into Pmma

1995 ◽  
Vol 388 ◽  
Author(s):  
V.V. Bazarov ◽  
V.Yu. Petukhov ◽  
V.A. Zhikharev ◽  
I.B. Khaibullin
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Temperature Dependence ◽  
Metal Films ◽  
High Dose ◽  
High Fluence ◽  
Granular Film ◽  
Satisfactory Explanation ◽  
Thermally Activated ◽  
Ions Implantation

AbstractThin granular metal films in polymethylmethacrylate(PMMA) have been synthesized by 40 keV Fe+, ag+ or Pb+ ions implantation with fluencies up to 6*1017 ion/cm2. the resistivity of synthesized films was measured in the temperature range from 300K. to 5K. the temperature dependence of the resistivity of PMMA implanted with ag+, Pb+ and small fluence Fe+ obeys the well known law lnR~(l/T)1/2. the samples implanted by high fluence Fe+ reveal rather a different behaviour. at low temperature (T<100K) the curves R(T) fit the formulae inR~lnT. the two mechanisms of conductivity of a granular film are considered: direct tunneling and thermally activated hopping. Combined with the morphology features of films, obtained by high fluence Fe+ implantation, the above mentioned consideration offers a satisfactory explanation of the observed temperature dependence R(T).

Optical, electrical, and chemical characterization of nanostructured InxGa1-xN formed by high fluence In+ ion implantation into GaN

2020 ◽  
pp. 110541
Author(s):  
C.A. Hernández-Gutiérrez ◽  
Yuriy Kudriavtsev ◽  
Dagoberto Cardona ◽  
A.G. Hernández ◽  
J.L. Camas-Anzueto
Keyword(s):  
Ion Implantation ◽  
Chemical Characterization ◽  
High Fluence

Temperature Dependence of the Fading Speed of Blue-Green Produced by Cu Ion Implantation into LiNbO3

1993 ◽  
Vol 316 ◽  
Author(s):  
Yukinori Saito ◽  
Shinji Suganomata ◽  
P. Moretti
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Temperature Dependence ◽  
Visible Region ◽  
Host Crystal

The optical properties of colorless and transparent crystals can be changed by introducing impurities into the crystal and depend on the elements added. What kind of elements should be added depends on how one modifies the properties. If one wants to put beautiful color on some colorless and transparent crystals such as Al203, SiO2, LiNbO3, etc., it is necessary to produce definite absorption peaks in the visible region for the crystals. In case of using ion implantation for introducing impurities, there is essentially no limitation to the combination of host crystal and impurities.

Correlation Between Defect Characteristics and Layer Intermixing in Si Implanted GaAs/AIGaAs Superlattices

1989 ◽  
Vol 147 ◽  
Author(s):  
Samuel Chen ◽  
S.-Tong Lee ◽  
G. Braunstein ◽  
G. Rajeswaran ◽  
P. Fellinger
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Peak Position ◽  
Compound Semiconductor ◽  
Subsequent Annealing ◽  
Semiconductor Superlattices ◽  
Furnace Annealing ◽  
Annealing Conditions ◽  
Induced Defects

AbstractDefects induced by ion implantation and subsequent annealing are found to either promote or suppress layer intermixing in Ill-V compound semiconductor superlattices (SLs). We have studied this intriguing relationship by examining how implantation and annealing conditions affect defect creation and their relevance to intermixing. Layer intermixing has been induced in SLs implanted with 220 keV Si+ at doses < 1 × 1014 ions/cm2 and annealed at 850°C for 3 hrs or 1050°C for 10 s. Upon furnace annealing, significant Si in-diffusion is observed over the entire intermixed region, but with rapid thermal annealing layer intermixing is accompanied by negligible Si movement. TEM showed that the totally intermixed layers are centered around a buried band of secondary defects and below the Si peak position. In the nearsurface region layer intermixing is suppressed and is only partially completed at ≤1 × 1015 Si/cm2. This inhibition is correlated to a loss of the mobile implantation-induced defects, which are responsible for intermixing.

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