Low Temperature Transport Properties of Ru2Si3 Single Crystals

1995 ◽  
Vol 402 ◽  
Author(s):  
U. Gottlieb ◽  
R. Madar ◽  
O. Laborde

AbstractWe present here low temperature transport properties of Ru2Si3 single crystals. Below room temperature the resistivity behaviour of this material is extrinsic. The Hall coefficient is positive down to about 10 K and the becomes negative below. We explain this crossover with a two band model. At very low T, the magnetoresistance of our crystals shows the typical behaviour for a doped semiconductor on the metallic side of the metal-insulator transition and can be described by a scaling law characteristic for weak localisation with strong electronelectron interactions.

2020 ◽  
Vol 8 (40) ◽  
pp. 14037-14048
Author(s):  
Pavan Kumar-Ventrapati ◽  
Shantanu Misra ◽  
Gaëlle Delaizir ◽  
Anne Dauscher ◽  
Bertrand Lenoir ◽  
...  

The n-type chalcogenide Bi8Se7 is the parent compound of a new class of highly-efficient thermoelectric materials for near-room-temperature thermoelectric applications.


1975 ◽  
Vol 53 (5) ◽  
pp. 486-497 ◽  
Author(s):  
J. G. Cook ◽  
M. J. Laubitz ◽  
M. P. Van der Meer

Data are presented for the thermal and electrical resistivity and thermoelectric power of two samples of Ca (having residual resistance ratios of 10 and 70) between 30 and 300 K. Large deviations from both Matthiessen's rule and the Wiedemann–Franz relationship are observed. The former are tentatively attributed to the presence of two distinct groups of carriers in Ca, and analyzed using the two band model. The latter deviations are interpreted as the effects of band structure. The thermoelectric power of Ca is large. In many respects the transport properties of Ca appear to be similar to those of the transition metals.


2007 ◽  
Vol 369 (5-6) ◽  
pp. 493-497 ◽  
Author(s):  
H.X. Gao ◽  
H.S. Yang ◽  
Y.S. Chai ◽  
J. Liu ◽  
C.H. Sun ◽  
...  

2004 ◽  
Vol 16 (45) ◽  
pp. 8035-8041 ◽  
Author(s):  
J J Lin ◽  
S M Huang ◽  
Y H Lin ◽  
T C Lee ◽  
H Liu ◽  
...  

1997 ◽  
Vol 62 (2) ◽  
pp. 213-217
Author(s):  
Zlatko Knor ◽  
Jan Plšek ◽  
Luboš Dvořák

The initial shape of the reaction zones for the interaction of hydrogen and oxygen on the surfaces of the single crystals of platinum in FEM and FIM devices is discussed in connection with the effect of temperature and surface anisotropy. Interaction of the (H2 + O2) mixture has been studied at room temperature and the results were confronted with the interaction of hydrogen and preadsorbed oxygen at low temperature and with the anisotropy of the low-temperature field-corrosion of platinum.


Author(s):  
G.W. Qiao

Although β-tin is a familiar metal with tetragonal structure, its dislocation structures in bulk specimens after plastic deformation or irradiation have not been reported with observations by TEM probably because of difficulties in preparing specimens and the relatively high mobility of dislocations under electron beam illumination at room temperature (T/Tm~0.7). It proved possible to prepare specimens of β-tin for TEM observation using low temperature, double-jet electro-polishing techniques using 8% perchloric acid in methanol mixture at -30 °C under 80 volts and a typical current density of 0.7 Acm-2.


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