Silicide Metallization of Aluminum Nitride Substrates for High-Temperature Microelectronics

1995 ◽  
Vol 402 ◽  
Author(s):  
E. Savrun ◽  
M. Sarikaya ◽  
A. Luan ◽  
T. Pearsall
Keyword(s):  
Integrated Circuits ◽  
Aluminum Nitride ◽  
Rf Sputtering ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Microscopy Imaging ◽  
Transmission Electron ◽  
Metal Silicides ◽  
Heat Treated ◽  
Equilibrium Calculations

AbstractA novel metallization for aluminum nitride substrates to package silicon carbide integrated circuits for use at temperatures up to 600°C was investigated. Chemical equilibrium calculations were used to determine the chemical compatibility of several refractory and transition metal disilicides with AIN. Tungsten disilicide, niobium disilicide, and titanium disilicide were selected for thin film deposition studies. WSi2, NbSi2, and TiSi2 thin films were deposited by RF sputtering on AIN substrates and heat treated at 900°C, 1000°C, and 1200°C in an argon atmosphere. Sheet resistivities were measured and interface stabilities and structures were characterized by scanning and transmission electron microscopy imaging, electron diffraction, and energy dispersive x-ray microanalysis spectroscopy. The results show that metal silicides appear to be promising as metallization for aluminum nitride for use at temperatures above 600°C.

Optimal target sputtering mode for aluminum nitride thin film deposition by high power pulsed magnetron sputtering

Vacuum ◽  
2019 ◽  
Vol 160 ◽  
pp. 410-417 ◽  
Author(s):  
D.L. Ma ◽  
H.Y. Liu ◽  
Q.Y. Deng ◽  
W.M. Yang ◽  
K. Silins ◽  
...  
Keyword(s):  
Thin Film ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
High Power ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Optimal Target ◽  
Pulsed Magnetron

Substrate Temperature Effects of the ZnO:AlF3Transparent Conductive Oxide

2013 ◽  
Vol 1494 ◽  
pp. 91-97
Author(s):  
Tien-Chai Lin ◽  
Wen-Chang Huang ◽  
Chin-Hung Liu ◽  
Shang-Chou Chang
Keyword(s):  
Substrate Temperature ◽  
Carrier Concentration ◽  
Electron Mobility ◽  
Thermal Effects ◽  
Rf Sputtering ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Zno Films ◽  
Zno Film

ABSTRACTThermal effects on the crystal structure, electrical and optical characteristics of the Al and F co-doped ZnO films (ZnO:AlF3) are discussed in the paper. The ZnO:AlF3 thin films are prepared by RF sputtering with a constant power (ZnO/AlF3=100W/75W) toward the ZnO and AlF3 targets. The substrate temperature varied from room temperature to 250 °C with a step of 50 °C during thin film deposition. The crystalline quality of the ZnO:AlF3 film improved as the substrate temperature increased, with a corresponding increase in grain size. The improvement of the film quality leads to a higher electron mobility, with electron mobility of 0.85 cm2/V-s for the film deposited at the substrate temperature of 250 °C. The doping effect of fluorine in ZnO, and hence carrier concentration, was reduced at high temperature due to the vaporization of fluorine. This led to a reduction of carrier concentration with increase of temperature from 25 to 200°C. The corresponding resistivity increased from 3.60×10−2 to 6.0×10−2 Ω-cm. While for a further increase in substrate temperature, the doping of Al to the ZnO film was increased and resulted in an increase in carrier concentration.

Effect of growth conditions on the composition and structure of Si1−xGex nanowires grown by vapor–liquid–solid growth

2006 ◽  
Vol 21 (11) ◽  
pp. 2876-2881 ◽  
Author(s):  
Kok-Keong Lew ◽  
Ling Pan ◽  
Elizabeth C. Dickey ◽  
Joan M. Redwing
Keyword(s):  
Composition Range ◽  
Thin Film Deposition ◽  
Growth Conditions ◽  
Film Deposition ◽  
Vapor Liquid Solid ◽  
Transmission Electron ◽  
Composition And Structure ◽  
Nanowire Surface ◽  
Gas Ratio ◽  
Vapor Liquid

The effect of growth conditions on the composition and structure of Si1−xGex nanowires grown by the vapor–liquid–solid method using gaseous precursors (SiH4 and GeH4) was investigated. Transmission electron microscopy was used to characterize the structural properties and elemental composition of the nanowires. At higher growth temperatures (>425 °C), Ge thin film deposition on the nanowire surface resulted in Au loss during growth and the formation of tapered structures. By simultaneously reducing the growth temperature from 425 to 325 °C to suppress the rate of Ge film deposition and increasing the GeH4/(GeH4 + SiH4) gas ratio, Si1−xGex nanowires were produced with Ge fractions spanning the entire composition range. The Ge fraction follows that predicted from the elemental nanowire growth rates in the Ge-rich (x > 0.5) regime, but deviates to higher Ge fractions in Si-rich (x < 0.5) nanowires. A mechanism was proposed whereby surface diffusion provides an additional pathway to Ge incorporation in Si-rich Si1−xGex nanowires.

Methods in Characterizing the SrTiO3/GaAs Interface

2012 ◽  
Vol 5 (1) ◽  
Author(s):  
T. Cooper ◽  
Q. Qiao ◽  
R.F. Klie
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Gaas Substrate ◽  
Theoretical Calculations ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Transmission Electron ◽  
Significant Interest ◽  
Electron Energy Loss ◽  
Theoretical Results

Characterizing the interface that occurs between a thin-film deposition of SrTiO3 on a GaAs substrate is of significant interest in order to determine the electrical capabilities that may be possible with this type of system. Imaging the interface by using transmission electron microscopy as well as determining important chemical and electrical information by using Electron Energy Loss Spectroscopy (EELS) are critical in determining if the system is actually appropriate for the desired applications. In addition to these experimental calculations, however, it may be useful to determine theoretical calculations in order to confirm and interpret the results. In particular, these may be determined for EELS by using a simulation program called FEFF9, which employs use of full multiple scattering calculations in order to produce these theoretical results.

scholarly journals Chromium thin film deposition on ITO substrate by RF sputtering

2014 ◽  
Vol 8 (3) ◽  
Author(s):  
Elaheh Akbarnejad ◽  
Ebrahim Asl Soleimani ◽  
Zohreh Ghorannevis
Keyword(s):  
Thin Film ◽  
Rf Sputtering ◽  
Thin Film Deposition ◽  
Film Deposition

Opportunities for Low Cost Processing of Erbium 8-Quinolinolates for Active Integrated Photonic Applications

2016 ◽  
Vol 16 (4) ◽  
pp. 3360-3363 ◽  
Author(s):  
Stefano Penna ◽  
Leonardo Mattiello ◽  
Silvia Di Bartolo ◽  
Angelo Pizzoleo ◽  
Vincenzo Attanasio ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Low Cost ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Core Material ◽  
Active Materials ◽  
Optical Process ◽  
Active Core ◽  
Erbium Doped ◽  
Er Doped

Erbium-doped organic emitters are promising active materials for Photonic Integrated Circuits (PICs) due to their emission shown at 1550 nm combined to the potential low cost processing. In particular, Erbium Quinoline (ErQ) gained a strong interest in the last decade for the good emission efficiency. This contribution reports the results derived from the application of ErQ as active core material within a buried optical waveguide, following the development of a purposed optical process to control the refractive index of ErQ and then to define a patterned structure from a single thin film deposition step. The reported results show the potential of Er-doped organic materials for low cost processing and application to planar PICs.

Analysis and Applications of ZnO Semiconductor Films Deposited by Laser and Sputtering Techniques

2006 ◽  
Vol 957 ◽  
Author(s):  
Tingfang Yen ◽  
Meiya Li ◽  
Nehal Chokshi ◽  
Sung Jin Kim ◽  
Alexander N. Cartwright ◽  
...  
Keyword(s):  
Thin Films ◽  
Spectral Response ◽  
Rf Sputtering ◽  
High Ratio ◽  
Film Deposition ◽  
Zno Thin Films ◽  
Semiconductor Films ◽  
Light Spectrum ◽  
Transmission Electron ◽  
Metal Semiconductor Metal

ABSTRACTIn this paper, ZnO thin films deposited by two methods have been studied. Specifically, the films were grown using i) Laser Assisted Molecular Beam Deposition (LAMBD) and ii) RF sputtering. Subsequent to film deposition, a subset of samples deposited using LAMBD were laser annealed. An additional set of samples (from LAMBD and RF sputtering) were annealed with N2 or forming gas at 600°C for 30mins.After deposition, optical and electrical properties of ZnO thin films have been studied. The application of ZnO to optical devices, including Metal-Semiconductor-Metal Photodetectors (MSM-PD) and solar cells, has been made. Several deposition experiments recently demonstrated that the thin films of RF-ZnO and LAMBD-ZnO have near ZnO parameters including refractive index close to 2, 1:1 stoichiometry ZnO, and 3.3 eV ZnO bandgap. Mixtures of single crystal and polycrystal grains were observed by Transmission Electron Microscopy (TEM) from LAMBD ZnO thin films. MSM current-voltage data show symmetrical photo current behavior. High ratio of photocurrent to dark current, good responsivity and fast pulse response of LAMBD-ZnO MSM were observed. ZnO/Si heterojunction solar cell result has been demonstrated and improvement in the ultraviolet light spectrum of spectral response has been shown in this paper.

Leakage Current and Dielectric Properties of Ba0.5Sr0.5TiO3 Films Deposited by RF Sputtering at Low Substrate Temperature

2003 ◽  
Vol 768 ◽  
Author(s):  
Nicholas Cramer ◽  
Thottam S. Kalkur ◽  
Elliot Philofsky ◽  
Lee Kammerdiner
Keyword(s):  
Dielectric Properties ◽  
Substrate Temperature ◽  
Leakage Current ◽  
Rf Sputtering ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Temperature Limit ◽  
Film Deposition ◽  
Processing Temperature ◽  
Device Applications

AbstractMost studies of Ba0.5Sr0.5TiO3 (BST) thin film deposition have focused on chemical vapor deposition or spin-on techniques. Both these techniques require high substrate temperature (greater than 600 °C), either during the deposition or during an anneal after deposition. A few groups have reported on sputtered films, but most of these studies also used high-temperature processes. While such temperatures are compatible with poly-Si plug DRAM and related technologies, they are far above the limits for technologies that require the deposition of non-refractory metals before the deposition of the ceramic film. For example, the use of Al metalization before the deposition of BST would limit the BST processing temperature to about 450 °C. A process compatible with such a temperature limit is reported. Such a process makes fabrication of high quality BST thin films difficult, primarily due to the need for oxidation and grain growth in the ceramic. The leakage current and dielectric properties of BST films deposited in such a process are reported and are shown to be sufficient for practical device applications.

Sign in / Sign up

Export Citation Format

Share Document