Initial Stage of Titanium Slicide Formation on Si(Lll) Substrate
Keyword(s):
AbstractDetailed analysis of Ti and/or TiSi2 islands growth have been made by UHV-STM observations after Ti deposition and subsequent annealing. It is shown that islands growth mode changes drastically at about 500 U for both cases on Si(111)-7×7 and on H-terminated Si(lll)-l×l. In the temperature regime higher than 500 °C, activation energies of islands growth are 1.12eV and 0.56eV for Si(M11)-7×7 and H-terminated Si(111) respectively. It is speculated that residual H-atoms combined with Si dangling bonds lowered surface diffusion activation energy.
1982 ◽
Vol 20
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pp. 195-198
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1981 ◽
Vol 14
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pp. 1133-1136
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2020 ◽
Vol 51
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pp. 6482-6497
1971 ◽
Vol 43
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pp. K59-K61
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2011 ◽
Vol 503
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pp. 283-286
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