Kinetics and Mechanism of the C49 to C54 Titanium Disilicide Phase Transformation in Nitrogen Ambient

1995 ◽  
Vol 402 ◽  
Author(s):  
R. V. Nagabushnam ◽  
S. Sharan ◽  
G. Sandhu ◽  
V. R. Rakesh ◽  
R. K. Singh ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Titanium Nitride ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Titanium Silicide ◽  
Titanium Film ◽  
Titanium Disilicide ◽  
Transmission Electron ◽  
Sheet Resistance Measurement ◽  
Kinetics Of

AbstractThe kinetics of the C49 to C54 TiSi2 phase transformation in nitrogen ambient have been investigated in a temperature range from 700 °C to 800 °C for a range of titanium film thicknesses (135 Å to 350 Å) using sheet resistance measurement, Auger electron spectroscopy(AES), Rutherford backscattering spectroscopy(RBS) and transmission electron microscopy(TEM). About 80% of the titanium converts to titanium silicide with the rest converting to titanium nitride. The activation energies obtained for the C49 to C54 transformation in nitrogen ambient are lower, at least by 2–2.25 eV, than that obtained for the transformations occuring either in argon ambient or vacuum environment. This has been explained with a model involving stress state of titanium silicide film with titanium nitride overlayer.

Growth Kinetics Of SiO2 On (001)Si Catalyzed By Cu3Si At Elevated Temperatures

1999 ◽  
Vol 564 ◽  
Author(s):  
H. Y. Huang ◽  
L. J. Chen
Keyword(s):  
Growth Rate ◽  
Growth Kinetics ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Linear Growth ◽  
Elevated Temperatures ◽  
The Other ◽  
Wet Oxidation ◽  
Transmission Electron ◽  
Kinetics Of

AbstractThe oxidation of Si catalyzed by 170-nm-thick Cu3Si at elevated temperatures has been investigated by transmission electron microscopy and Auger electron spectroscopy. For wet oxidation at 140–180 °C, the growth rate of the oxide layer was increased with the temperature. On the other hand, as the temperature was increased above 200 °C, the growth rate slowed down. The growth kinetics of oxide was investigated. Controlling mechanisms for the growth of oxide owing to the grain growth of Cu3Si are discussed. The activation energy for the linear growth of oxide was measured to be 0. 19 ± 0.1 eV.

Reaction Kinetics of Sputter-Deposited Ti On SiO2 Substrates during Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
E.J. Yun ◽  
H.G. Chun ◽  
K. Jung ◽  
D.L. Kwong ◽  
S. Lee
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Kinetics Of

ABSTRACTIn this paper, the interactions of sputter-deposited Ti on SiO2 substrates during rapid thermal annealing in nitrogen at 550°C - 900°C for 10 - 60 s have been systematically studied using X-ray diffraction, Auger electron spectroscopy, transmission electron diffraction, TEM & cross-sectional TEM, and sheet resistance measurements.

Auger Electron Spectroscopy and Its Application to Nanotechnology

2011 ◽  
Vol 19 (2) ◽  
pp. 12-15 ◽  
Author(s):  
S. N. Raman ◽  
D. F. Paul ◽  
J. S. Hammond ◽  
K. D. Bomben
Keyword(s):  
Electron Microscopy ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Imaging Techniques ◽  
Chemical Characterization ◽  
Depth Resolution ◽  
Surface Modifications ◽  
Transmission Electron ◽  
Nanoscale Characterization

Over the past decade, the field of nanotechnology has expanded, and the most heavily used nanoscale characterization/imaging techniques have been scanning probe microscopy (SPM), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Although these high-resolution imaging techniques help visualize nanostructures, it is essential to understand the chemical nature of these materials and their growth mechanisms. Surface modifications in the first few nanometers can alter the bulk properties of these nanostructures, and conventional characterization techniques, including energy dispersive spectroscopy (EDS) and electron energy loss spectroscopy (EELS) associated with SEM and TEM are not suited to detecting these surface modifications except in special, favorable specimens. A modern state-of-the-art scanning Auger electron spectroscopy (AES) instrument provides valuable elemental and chemical characterization of nanostructures with a lateral spatial resolution better than 10 nm and a depth resolution of a few nm. In this article we review the technique of scanning AES and highlight its unique analytical capabilities in the areas of nanotechnology, metallurgy, and semiconductors.

The Distribution of Phosphorus in Romano-British Ironwork

1990 ◽  
Vol 185 ◽  
Author(s):  
Alain E. Kaloyeros ◽  
Robert M. Ehrenreich
Keyword(s):  
Electron Microscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Materials Analysis ◽  
X Ray ◽  
Transmission Electron ◽  
Depth Study ◽  
Iron Artifacts ◽  
And Performance ◽  
Secondary Ion

AbstractPhosphorus is found to be a common impurity in many of the iron tools and weapons produced during the pre-Roman and Roman Iron Ages of Britain (600 BC - 300 AD). The effects of this impurity on the properties and performance of antiquarian materials is not well understood, however. This paper presents the initial findings of an in-depth study of the distribution, chemistry, and effects of phosphorus in Romano-British ironwork. For this purpose, two Romano-British iron artifacts from the site of Ircheoter, Northamptonshire, were examined using powerful techniques for archeological materials analysis that include electron microprobe, secondary ion mass spectroscopy (SIMS), transmission electron microscopy (TEM) with energydispersive x-ray spectroscopy capabilities (EDXS), and Auger electron spectroscopy (AES). It was found that phosphorous was indeed present in the artifacts. The phosphorus atoms were predominantly segregated at grain boundaries and thus should have led to a lowering of grain boundary cohesion and a degradation in the performance of the tools.

An Auger Electron Spectroscopic Study of the Diffusion of Sulfur and Carbon in α-Iron

1977 ◽  
Vol 31 (3) ◽  
pp. 210-213 ◽  
Author(s):  
W. E. Swartz ◽  
D. M. Holloway
Keyword(s):  
Activation Energy ◽  
Grain Boundary ◽  
Diffusion Process ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Boundary Diffusion ◽  
Carbon Migration ◽  
Sulfur Diffusion ◽  
Kinetics Of ◽  
Arrhenius Analysis

Auger electron spectroscopy has been employed to study the diffusion of sulfur and carbon in α-iron. In the temperature range 25 to 500°C carbon preferentially segregates to the surface. From 400 to 700°C sulfur segregates to the surface while carbon is thermally desorbed. An Arrhenius analysis of the sulfur diffusion data yields an activation energy of 14.5 kcal/mol, which is consistent with a grain boundary diffusion process. The kinetics of carbon migration is complicated by the thermal desorption which makes Arrhenius analysis impossible.

scholarly journals Titanium Silicide Formation in Presence of Oxygen

1992 ◽  
Vol 15 (1) ◽  
pp. 9-26 ◽  
Author(s):  
C. Nobili ◽  
F. Nava ◽  
G. Ottaviani ◽  
M. Costato ◽  
G. De Santi ◽  
...  
Keyword(s):  
Electron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Titanium Silicide ◽  
Silicide Formation ◽  
Metal Oxidation ◽  
X Ray Diffraction ◽  
Amorphous Films ◽  
Titanium Disilicide ◽  
X Ray

In-situ resistivity vs. temperature, Rutherford backscattering spectrometry, Auger electron spectroscopy and X-ray diffraction measurements have been performed in order to study the effects arising from the presence of oxygen in the annealing ambient on the integrity of amorphous films of TiSix, with x ranging from 1.45 to 2.1. Crystalisation occurs around 400 C. The presence of oxygen produces the formation of silicon and titanium oxide around 500 C. Critical analysis of the experimental results have indicated that metal oxidation is inhibited when an excess of silicon is present, which suggests the use of a sputtered Si coating cap as a medium capable of effectively decoupling the silicide film from oxygen. This avoids unwanted Ti oxidation even in heavily oxygen contaminated ambients up to the highest temperatures used for the formation of low resistivity titanium disilicide.

Self-Lubricating, TiN-MoS2 Composite Coatings Produced by Simultaneous Deposition from Ti((CH3) 2N)4/NH3/MoF6/H2S GAS Mixtures

1994 ◽  
Vol 363 ◽  
Author(s):  
Y. W. Bae ◽  
W. Y. Lee ◽  
T. M. Besmann ◽  
P. J. Blau ◽  
K. L. More ◽  
...  
Keyword(s):  
Electron Spectroscopy ◽  
Auger Electron ◽  
Composite Coatings ◽  
Gas Mixtures ◽  
Ambient Condition ◽  
Kinetic Friction ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Computer Controlled

AbstractComposite coatings consisting of discrete phases of TiN and MoS2 were codeposited on graphite substrates from Ti((CH3)2N)4/NH3/MoF6/H2S gas mixtures in a cold-wall reactor at 1073 K and 1.3 kPa. Chemical composition and microstructure of the coatings were characterized by Auger electron spectroscopy, X-ray diffraction, and transmission electron microscopy. Kinetic friction coefficients of the coatings were determined by a computer-controlled friction microprobe and values less than 0.2 were obtained with a type-440C stainless-steel counterface under ambient condition.

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