Dependence of Electro-Optic Effects on the Orientations of Epitaxial LiNbO3 Films

1995 ◽  
Vol 401 ◽  
Author(s):  
See-Hyung Lee ◽  
T. W. Noh ◽  
Jai-Hyung Lee
Keyword(s):  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Epitaxial Films ◽  
Laser Deposition ◽  
Effective Coefficient ◽  
Low Oxygen ◽  
Deposition Parameter ◽  
Electro Optic ◽  
Low Oxygen Pressure

AbstractEpitaxial LiNbO3 films were grown on a-cut sapphire, i.e., α-A12O3(0112), substrates by pulsed laser deposition. It is found the oxygen pressure is an important deposition parameter to influence the orientations of the LiNbO3 films. At an oxygen pressure of 10−1 torr, LiNbO3(0001) film was grown epitaxially. And, at a low oxygen pressure (i.e., 5x10−4 torr), LiNbO3(1120) film was grown epitaxially. Due to the anisotropic electro-optic (EO) constants, these films with the different orientations display large differences in their EO properties: the epitaxial LiNb3(0001) film shows little EO effects, but the LiNbO3(1120) film shows a large quadratic EO behavior with an effective coefficient of 2.38×10−5 m2/V2. The dependence of EO effects on the orientations of the epitaxial films was analyzed in terms of the linear and quadratic EO tensors of LiNbO3.

Structural Properties of Yttria-stabilized Zirconia Thin Films Grown by Pulsed Laser Deposition

1999 ◽  
Vol 14 (4) ◽  
pp. 1329-1336 ◽  
Author(s):  
J. Y. Dai ◽  
H. C. Ong ◽  
R. P. H. Chang
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Growth Direction ◽  
Yttria Stabilized Zirconia ◽  
Laser Deposition ◽  
Low Oxygen ◽  
Stabilized Zirconia

Yttria-stabilized zirconia (YSZ) thin films grown by the pulsed laser deposition method on (0001) sapphire substrates have been studied by x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and scanning electron microscopy (SEM). It was found that the crystal orientation of the YSZ films changes as a function of oxygen pressure during deposition. At low oxygen pressure (50 mTorr), well-defined (111) oriented YSZ films are grown. High oxygen pressure favors the nucleation of (001) oriented YSZ grains. A model to explain the preferred growth direction of (001) YSZ is presented. Utilizing the experimental data, we have developed a two-step process to epitaxially grow high-quality (001) oriented YSZ on (0001) sapphire substrate.

The effect of growth oxygen pressure on the metal–insulator transition of ultrathin Sm0.6Nd0.4NiO3−δepitaxial films

RSC Advances ◽  
2014 ◽  
Vol 4 (98) ◽  
pp. 55082-55086 ◽  
Author(s):  
Haoliang Huang ◽  
Zhenlin Luo ◽  
Yuanjun Yang ◽  
Mengmeng Yang ◽  
Haibo Wang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Strain State ◽  
Pulsed Laser ◽  
Epitaxial Films ◽  
Insulator Transition ◽  
Laser Deposition ◽  
Metal Insulator Transition ◽  
Metal Insulator

Ultrathin Sm0.6Nd0.4NiO3−δepitaxial films were deposited by pulsed laser deposition (PLD) onto LaAlO3(LAO) single crystal substrates. TheTMIof the SNNO films remarkably decreases with the decrease of the growth oxygen pressure, while the strain state varied slightly.

Pulsed laser deposition of oriented V2O5 thin films

2000 ◽  
Vol 15 (10) ◽  
pp. 2249-2265 ◽  
Author(s):  
Jeanne M. McGraw ◽  
John D. Perkins ◽  
Falah Hasoon ◽  
Philip A. Parilla ◽  
Chollada Warmsingh ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Glass Substrates ◽  
Wide Range ◽  
Phase Pure ◽  
Amorphous Quartz ◽  
Quartz Substrates

We have found that by varying only the substrate temperature and oxygen pressure five different crystallographic orientations of V2O5 thin films can be grown, ranging from amorphous to highly textured crystalline. Dense, phase-pure V2O5 thin films were grown on SnO2/glass substrates and amorphous quartz substrates by pulsed laser deposition over a wide range of temperatures and oxygen pressures. The films' microstructure, crystallinity, and texturing were characterized by electron microscopy, x-ray diffraction, and Raman spectroscopy. Temperature and oxygen pressure appeared to play more significant roles in the resulting crystallographic texture than did the choice of substrate. A growth map summarizes the results and delineates the temperature and O2 pressure window for growing dense, uniform, phase-pure V2O5 films.

Effect of oxygen pressure performance of PZO thin films deposited by pulsed laser deposition at low temperature

2017 ◽  
Vol 727 ◽  
pp. 1273-1279 ◽  
Author(s):  
Shihui Yu ◽  
Binhui Zhu ◽  
Haoran Zheng ◽  
Lingxia Li ◽  
Siliang Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Effect Of Oxygen

Pulsed Laser Deposition of Epitaxial LiNbO3 Films on Sapphire Substrates Using a Single Crystal Targets

1994 ◽  
Vol 361 ◽  
Author(s):  
See-Hyung Lee ◽  
Tae W. Noh ◽  
Jai-Hyung Lee ◽  
Young-Gi Kim
Keyword(s):  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pole Figure ◽  
Oxygen Pressure ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Sapphire Substrates ◽  
Crystallographic Orientations

ABSTRACTPulsed laser deposition was used to grow epitaxial LiNbO3 films on sapphire(0001) substrates with a single crystal LiNbO3 target. Using deposition temperatures below 450 °C, LiNbO3 films with correct stoichiometry could be grown without using Li-rich targets. Rutherford backscattering spectrometry measurements showed that the oxygen to niobium ratio is 3.00 ± 0.15 to 1.00. It was also found that the crystallographic orientations of the LiNbO3 films could be controlled by adjusting the oxygen pressure during deposition. An x-ray pole figure shows that epitaxial LiNbO3 films were grown on sapphire(0001), but with twin boundaries.

Role of oxygen pressure in growth of CeAlOx thin films on Si by pulsed laser deposition

2003 ◽  
Vol 94 (1) ◽  
pp. 594-597 ◽  
Author(s):  
L. Yan ◽  
L. B. Kong ◽  
J. S. Pan ◽  
C. K. Ong
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition

Influence of oxygen pressure on the electrical properties of Mn-doped Bi0.5Na0.5TiO3BaTiO3 thin films by pulsed laser deposition

2019 ◽  
Vol 45 (10) ◽  
pp. 13518-13522 ◽  
Author(s):  
Shan Jiao ◽  
Yi Zhang ◽  
Zhihua Duan ◽  
Tao Wang ◽  
Yanxue Tang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Mn Doped

Influence of oxygen pressure, temperature and substrate/target distance on Cu2Ta4O12 thin films prepared by pulsed-laser deposition

2005 ◽  
Vol 479 (1-2) ◽  
pp. 12-16 ◽  
Author(s):  
Andreas Heinrich ◽  
Bernd Renner ◽  
Robert Lux ◽  
Stefan G. Ebbinghaus ◽  
Armin Reller ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Target Distance ◽  
Laser Deposition
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