Thermomechanical Relaxation of Thin-Film Metallizations

1984 ◽  
Vol 40 ◽  
Author(s):  
Hartmann Hieber
Keyword(s):  
Thin Film ◽  
Stress Relaxation ◽  
Silicon Substrates ◽  
Thin Glass ◽  
Thermally Induced ◽  
Cu Films ◽  
Induced Stress ◽  
Diffusion Controlled ◽  
Stationary Creep ◽  
Power Law Creep

AbstractPure Al and Cu films evaporated on thin glass and thermally oxidized silicon substrates are subject to changes in temperature Ṫ>100Ks-1. With constant temperature the stress relaxation is between 1 and 10 % of the thermally induced stress. The stationary creep rates are comparable to diffusion controlled power-law creep. The discontinuous grain growth during the T cycling shifts the transient amplitudes and the stationary slopes of stress to negative values. DC resistance measurements indicate the production and annihilation of vacancies.

Line width Dependence of Stress Relaxation and Yield Behavior of Passivated Al(Cu) Lines

1994 ◽  
Vol 338 ◽  
Author(s):  
I.-S. Yeo ◽  
S.G.H. Anderson ◽  
C.-N. Liao ◽  
D. Jawarani ◽  
H. Kawasaki ◽  
...  
Keyword(s):  
Stress Relaxation ◽  
Void Formation ◽  
Relaxation Behavior ◽  
Effect Of Temperature ◽  
Thermally Induced ◽  
Stress Relaxation Behavior ◽  
Cu Films ◽  
Dislocation Glide ◽  
Thermally Activated ◽  
On Line

ABSTRACTStress relaxation behavior of thermally induced stresses in passivated line structures is strongly influenced by the metal yield strength. For some line geometries, stress relaxation can lead to void formation. In this study, bending beam measurements have been carried out to measure the thermal stress and stress relaxation behavior of passivated Al(l wt.% Cu) line structures with 3, 1, and 0.5 µm line widths. Our results reveal that stress relaxation in Al(Cu) films and lines shows log(time) kinetics consistent with a thermally activated dislocation glide mechanism. The kinetics of stress relaxation depend on line geometry and temperature, which can be explained by a combined effect of temperature (mass transport) and shear stress (driving force).

X-ray diffraction analysis of thermally-induced stress relaxation in ZnO films deposited by magnetron sputtering on (100) Si substrates

2010 ◽  
Vol 518 (18) ◽  
pp. 5237-5241 ◽  
Author(s):  
F. Conchon ◽  
P.O. Renault ◽  
P. Goudeau ◽  
E. Le Bourhis ◽  
E. Sondergard ◽  
...  
Keyword(s):  
Stress Relaxation ◽  
Magnetron Sputtering ◽  
Diffraction Analysis ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Thermally Induced ◽  
X Ray ◽  
Si Substrates ◽  
Induced Stress

Diffusional creep induced stress relaxation in thin Cu films on silicon

2008 ◽  
Vol 85 (10) ◽  
pp. 2179-2182 ◽  
Author(s):  
D. Chocyk ◽  
A. Proszynski ◽  
G. Gladyszewski
Keyword(s):  
Stress Relaxation ◽  
Diffusional Creep ◽  
Cu Films ◽  
Induced Stress

Thermally induced stress relaxation and densification of spin-on-glass thin films

2000 ◽  
Vol 76 (4) ◽  
pp. 430-432 ◽  
Author(s):  
C. K. Chiang ◽  
W. E. Wallace ◽  
G. W. Lynn ◽  
D. Feiler ◽  
W. Xia
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Thermally Induced ◽  
Induced Stress

The Influence of Thermal History and Alloying Elements on Temporary Strengthening of Thin Al-Cu Films

1999 ◽  
Vol 594 ◽  
Author(s):  
J. P. Lokker ◽  
G. C. A. M. Janssen ◽  
S. Radelaar
Keyword(s):  
Thin Films ◽  
Copper Concentration ◽  
Isothermal Hold ◽  
Thermally Induced ◽  
Stress Increase ◽  
Cu Films ◽  
Hold Period ◽  
Hold Temperature ◽  
Induced Stress ◽  
Large Tensile Stress

AbstractThe influence of Cu on the response of Al-Cu thin films to thermally induced stress is studied. The copper concentration is varied between 0 and 1.15 at. %. It is proposed that copper atoms which have not formed precipitates, largely affect the mechanical behaviour. This idea is supported by the following observations. An isothermal hold results in temporary strengthening of the films. The extent of this strengthening increases with copper concentration, increases with decreasing isothermal hold temperature and saturates with increasing isothermal hold period. Based on these observations the large tensile stress increase below 200 °C is ascribed to the formation of Cottrell atmospheres.

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

ИССЛЕДОВАНИЕ МАГНИТОРЕЗИСТИВНЫХ НАНОСТРУКТУР С МАГНИТОСТРИКЦИОННЫМ ЭФФЕКТОМ ДЛЯ УСТРОЙСТВ МАГНИТНОЙ СТРЕЙНТРОНИКИ

2020 ◽  
Vol 96 (3s) ◽  
pp. 420-423
Author(s):  
Д.А. Жуков ◽  
В.В. Амеличев ◽  
Д.В. Костюк ◽  
А.И. Крикунов ◽  
Д.В. Васильев ◽  
...  
Keyword(s):  
Thin Film ◽  
Experimental Studies ◽  
Silicon Substrates ◽  
Multilayer Nanostructures ◽  
Magnetoresistive Effect ◽  
Anisotropic Magnetoresistive Effect

Представлены результаты экспериментальных исследований магнитострикционных и магниторезистивных свойств тонкопленочных многослойных наноструктур Ta/FeNiCo/CoFe/Ta и Ta/FeNiCo/CoFeВ/Ta на окисленных кремниевых подложках диаметром 100 мм. Экспериментально установлена зависимость величины анизотропного магниторезистивного эффекта от величины механических деформаций в экспериментальных образцах наноструктур. The paper presents the results of experimental studies of the magnetostriction and magnetoresistive properties of thin-film multilayer nanostructures Ta/FeNiCo/CoFe/Ta and Ta/FeNiCo/CoFeB/Ta on oxidized silicon substrates with a diameter of 100 mm. The dependence of the magnitude of the anisotropic magnetoresistive effect on the magnitude of mechanical strains in experimental samples of nanostructures has been experimentally established.

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