Reactive Laser–Sputtering for Amorphous Silicon Films

ABSTRACTIntense, Q-switched Nd:YAG laser pulses were used to vaporize a silicon target. The pulsed atomic vapor generated produces amorphous silicon films at unusually fast accumulation speeds of 106 Å/s. Despite this speed, reactive deposition is made possible simply by evaporating in a reactive gas atmosphere. For instance, hydrogenated films have been produced by evaporating in hydrogen. Atomic hydrogen generated by thermal decomposition at a laserirradiated target spot is responsible for hydrogenation. Dynamics of this laser-induced deposition have been studied by a spectroscopic technique.