A Model for Laser Beam Induced Solid-State Crystal Growth in Silicon On Sapphire
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ABSTRACTAn analytic model is presented for laser beam induced solid-state crystal growth in silicon on sapphire. The model, which assumes a single activation energy, utilizes temperature profiles calculated from a Green's function solution to the heat equation. Calculated crystal growth in silicon on sapphire is compared to experimentally measured values.
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2012 ◽
Vol 33
(10)
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pp. 1265-1274
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1990 ◽
Vol 12
(1)
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pp. 49-59
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2007 ◽
Vol 55
(12)
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pp. 3504-3514
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