Fundamentals of Energy Transfer During Picosecond Irradiation of Silicon
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ABSTRACTThe fundamentals of energy transfer in semiconductors during and following pulsed laser excitation are reviewed within the frame of results obtained in picosecond laser experiments. This paper discusses the theoretical processes as well as the experimental evidence, which sets limits of electron and lattice temperature of irradiated silicon. Simple thermal melting is the most probable explanation for the laser induced phase transitions observed.
1982 ◽
Vol 92
(1)
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pp. 1-3
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2008 ◽
Vol 195
(1)
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pp. 135-143
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1982 ◽
Vol 80
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pp. 433-436
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1984 ◽
Vol 17
(15)
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pp. 3083-3090
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2008 ◽
Vol 14
(6)
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pp. 571-580
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1912 ◽
Vol 86
(589)
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pp. 478-494
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2018 ◽
Vol 18
(19)
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pp. 14005-14015
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