Low-Temperature Growth and Structural Characterization of GaAs Using Ionized Source Beam Epitaxy

1995 ◽  
Vol 399 ◽  
Author(s):  
D.-W. Roh ◽  
K. Kim
Keyword(s):  
Low Temperature ◽  
Film Growth ◽  
Growth Parameters ◽  
High Energy ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Transmission Electron ◽  
Gaas Films ◽  
Substrate Temperatures ◽  
Low Temperature Grown Gaas

ABSTRACTSingle-crystal GaAs films were grown on SI (100) GaAs at substrate temperatures below 200 °C by using ionized source beam epitaxy. The correlation between the properties of the films and the growth parameters, in particular, the substrate temperature, the amount of As-source beam ionization, and the acceleration voltage of the As beam was investigated to elucidate the possible benefits of source beam ionization and acceleration on low-temperature thin film growth. The use of ionized and accelerated As-source beam greatly improved the quality of the low-temperature grown GaAs film. The surface morphology, crystallinity, and micro structure of the low temperature grown GaAs films were evaluated using in situ reflection high energy electron diffraction, double crystal X-ray diffraction, and cross section transmission electron microscopy.

Strain in Epitaxial GaAs on CaF2/Si(111)

1989 ◽  
Vol 160 ◽  
Author(s):  
L.J. Schowalter ◽  
J.E. Ayers ◽  
S.K. Ghandhi ◽  
Shin Hashimoto ◽  
W.M. Gibson ◽  
...  
Keyword(s):  
Layer Structure ◽  
High Energy ◽  
Buffer Layers ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Ion Channeling ◽  
Gaas Films ◽  
Mev Protons ◽  
Good Agreement

AbstractEpitaxial layers of (111) GaAs of approximately 1 µm thickness were grown on epitaxial CaF2 buffer layers which were either 140 or 380 nm thick on Si(111) substrates. The best nucleation temperature for the GaAs on CaF2/Si(111) we have observed was 620 °C. This resulted in high quality GaAs films which exhibited channeling minimum yields of 4%. The density of threading dislocations in the GaAs layers was observed by TEM to be ~108 cm-2. Double-crystal x-ray diffraction measurements showed that the strain (ε┴.) was less than 2.2×10-4 in both sets of GaAs samples. Ion channeling, however, revealed a large tetragonal strain of 3.5×10-3 (ε┴ = 1.7×10-3) in the thinner (140 nm) CaF2 buffer layers. By doing ion channeling with high energy (2.5 MeV) protons, it was possible to determine strain more accurately. Using this technique, we were able to set an upper limit for the tetragonal strain of 2.5×10-4 in both the GaAs (which implies ε┴ < 8×10-5 and CaF2 (ε┴ < 1.5×10-4) layers for the thicker (380 nm) CaF2 buffer layer structure. These results are in good agreement with the strain predicted from previous strain measurements of CaF2 epitaxial layers on Si.

Modifications of a JEOL 2000EX TEM for insSitu surface studies

1993 ◽  
Vol 51 ◽  
pp. 640-641
Author(s):  
Michael T. Marshall ◽  
Xianghong Tong ◽  
J. Murray Gibson
Keyword(s):  
Electron Diffraction ◽  
Surface Science ◽  
Film Growth ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Transmission Electron ◽  
Fundamental Insight

We have modified a JEOL 2000EX Transmission Electron Microscope (TEM) to allow in-situ ultra-high vacuum (UHV) surface science experiments as well as transmission electron diffraction and imaging. Our goal is to support research in the areas of in-situ film growth, oxidation, and etching on semiconducter surfaces and, hence, gain fundamental insight of the structural components involved with these processes. The large volume chamber needed for such experiments limits the resolution to about 30 Å, primarily due to electron optics. Figure 1 shows the standard JEOL 2000EX TEM. The UHV chamber in figure 2 replaces the specimen area of the TEM, as shown in figure 3. The chamber is outfitted with Low Energy Electron Diffraction (LEED), Auger Electron Spectroscopy (AES), Residual Gas Analyzer (RGA), gas dosing, and evaporation sources. Reflection Electron Microscopy (REM) is also possible. This instrument is referred to as SHEBA (Surface High-energy Electron Beam Apparatus).The UHV chamber measures 800 mm in diameter and 400 mm in height. JEOL provided adapter flanges for the column.

Defect morphology in thick relaxed layers of InGaAs on GaAs

1990 ◽  
Vol 48 (4) ◽  
pp. 668-669
Author(s):  
R H Dixon ◽  
P Kidd ◽  
P J Goodhew
Keyword(s):  
Electron Microscopy ◽  
Surface Morphology ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Strained Layers ◽  
Good Surface ◽  
Transmission Electron ◽  
Device Structures ◽  
Surface Morphologies

Thick relaxed InGaAs layers grown epitaxially on GaAs are potentially useful substrates for growing high indium percentage strained layers. It is important that these relaxed layers are defect free and have a good surface morphology for the subsequent growth of device structures.3μm relaxed layers of InxGa1-xAs were grown on semi - insulating GaAs substrates by Molecular Beam Epitaxy (MBE), where the indium composition ranged from x=0.1 to 1.0. The interface, bulk and surface of the layers have been examined in planar view and cross-section by Transmission Electron Microscopy (TEM). The surface morphologies have been characterised by Scanning Electron Microscopy (SEM), and the bulk lattice perfection of the layers assessed using Double Crystal X-ray Diffraction (DCXRD).The surface morphology has been found to correlate with the growth conditions, with the type of defects grown-in to the layer (e.g. stacking faults, microtwins), and with the nature and density of dislocations in the interface.

scholarly journals Effects of Recycled Fe2O3 Nanofiller on the Structural, Thermal, Mechanical, Dielectric, and Magnetic Properties of PTFE Matrix

Polymers ◽  
2021 ◽  
Vol 13 (14) ◽  
pp. 2332
Author(s):  
Ahmad Mamoun Khamis ◽  
Zulkifly Abbas ◽  
Raba’ah Syahidah Azis ◽  
Ebenezer Ekow Mensah ◽  
Ibrahim Abubakar Alhaji
Keyword(s):  
Electron Microscopy ◽  
High Energy ◽  
Filler Loading ◽  
Complex Permeability ◽  
X Ray Diffraction ◽  
Thermal Expansion Coefficients ◽  
Transmission Electron ◽  
Energy Ball ◽  
Hematite Fe2o3 ◽  
Ptfe Composites

The purpose of this study was to improve the dielectric, magnetic, and thermal properties of polytetrafluoroethylene (PTFE) composites using recycled Fe2O3 (rFe2O3) nanofiller. Hematite (Fe2O3) was recycled from mill scale waste and the particle size was reduced to 11.3 nm after 6 h of high-energy ball milling. Different compositions (5–25 wt %) of rFe2O3 nanoparticles were incorporated as a filler in the PTFE matrix through a hydraulic pressing and sintering method in order to fabricate rFe2O3–PTFE nanocomposites. The microstructure properties of rFe2O3 nanoparticles and the nanocomposites were characterized through X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and high-resolution transmission electron microscopy (HRTEM). The thermal expansion coefficients (CTEs) of the PTFE matrix and nanocomposites were determined using a dilatometer apparatus. The complex permittivity and permeability were measured using rectangular waveguide connected to vector network analyzer (VNA) in the frequency range 8.2–12.4 GHz. The CTE of PTFE matrix decreased from 65.28×10−6/°C to 39.84×10−6/°C when the filler loading increased to 25 wt %. The real (ε′) and imaginary (ε″) parts of permittivity increased with the rFe2O3 loading and reached maximum values of 3.1 and 0.23 at 8 GHz when the filler loading was increased from 5 to 25 wt %. A maximum complex permeability of 1.1−j0.07 was also achieved by 25 wt % nanocomposite at 10 GHz.

Low Temperature Large Scale CVD Synthesis of Nano Onion-Like Fullerenes

2012 ◽  
Vol 490-495 ◽  
pp. 3211-3214 ◽  
Author(s):  
Lei Shan Chen ◽  
Cun Jing Wang
Keyword(s):  
Electron Microscopy ◽  
Low Temperature ◽  
Aluminum Hydroxide ◽  
Large Scale ◽  
Iron Catalyst ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Naoh Solution ◽  
Synthesis Reactions

Synthesis reactions were carried out by chemical vapor deposition using iron catalyst supported on aluminum hydroxide at 400 °C and 420 °C, in the presence of argon as carrier gas and acetylene as carbon source. The aluminum hydroxide support was separated by refluxing the samples in 40% NaOH solution for 2 h and 36% HCl solution for 24 h, respectively. The samples were characterized by field-emission scanning electron microscopy, energy dispersive spectroscopy, high-resolution transmission electron microscopy and X-ray diffraction. The results show that carbon nanotubes were the main products at 420 °C, while large scale high purity nano onion-like fullerenes encapsulating Fe3C, with almost uniform sizes ranging from 10-50 nm, were obtained at the low temperature of 400 °C.

Physical Properties Of Single-Phase Skutterudite Thin-Films (CoSb3 and IrSb3)

1998 ◽  
Vol 545 ◽  
Author(s):  
J. C. Caylor ◽  
A. M. Stacy ◽  
T. Sands ◽  
R. Gronsky
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Growth Parameters ◽  
X Ray Diffraction ◽  
Adhesion Properties ◽  
Rutherford Back Scattering ◽  
Phonon Component ◽  
Transmission Electron ◽  
Structure Morphology ◽  
High Vapor

AbstractBulk skutterudite phases based on the CoAs3 structure have yielded compositions with a high thermoelectric figure-of-merit (“ZT”) through the use of doping and substitutional alloying. It is postulated that further enhancements in ZT may be attained in artificially structured skutterudites by engineering the microstructure to enhance carrier mobility while suppressing the phonon component of the thermal conductivity. In this work the growth and properties of singlephase CoSb3 and IrSb3 skutterudite thin films are reported. The films are synthesized by pulsed laser deposition (PLD) where the crystallinity can be controlled by the deposition temperature. Powder X-ray diffraction (PXRD), Transmission electron microscopy (TEM) and Rutherford- Back Scattering (RBS) were used to probe phase, structure, morphology and stoichiometry of the films as functions of growth parameters and substrate type. A substrate temperature of 250°C was found to be optimal for the deposition of the skutterudites from stoichiometric targets. Above this temperature the film is depleted of antimony due to its high vapor pressure eventually reaching a composition where the skutterudite structure is no longer stable. However, when films are grown from antimony-rich targets the substrate temperature can be increased to at least 350°C while maintaining the skutterudite phase. In addition, adhesion properties of the films are explored in terms of the growth mode and substrate interaction. Finally, preliminary room temperature electrical and thermal measurements are reported.

Microstructure and superconducting properties of attrition-milled Bi2Sr2CaCu2Ox

1994 ◽  
Vol 9 (2) ◽  
pp. 297-304 ◽  
Author(s):  
J.S. Luo ◽  
H.G. Lee ◽  
S.N. Sinha
Keyword(s):  
Electron Microscopy ◽  
Milled Powder ◽  
High Energy ◽  
Double Layers ◽  
Superconducting Transition ◽  
Superconducting Properties ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Steel Tank ◽  
Practical Implications

The microstructure and superconducting properties of Bi2Sr2CaCu2Ox (Bi-2212) during high-energy attrition milling were investigated in detail by a combination of x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and magnetization techniques. The starting superconducting powder was milled in a standard laboratory attritor using yttria-stabilized ZrO2 balls and a stainless steel tank. After selected time increments, the milling was interrupted and a small quantity of milled powder was removed for further analysis. It was found that the deformation process rapidly refines Bi-2212 into nanometer-size crystallites, increases atomic-level strains, and changes the plate-like morphology of Bi-2212 to granular submicron clusters. At short milling times, the deformation seems localized at weakly linked Bi-O double layers, leading to twist/cleavage fractures along the {001} planes. The Bi-2212 phase decomposes into several bismuth-based oxides and an amorphous phase after excessive deformation. The superconducting transition is depressed by about 10 K in the early stages of milling and completely vanishes upon prolonged deformation. A deformation mechanism is proposed and correlated with the evolution of superconducting properties. The practical implications of these results are presented and discussed.

scholarly journals Multiscale Copper-µDiamond Nanostructured Composites

2012 ◽  
Vol 730-732 ◽  
pp. 925-930
Author(s):  
Daniela Nunes ◽  
Vanessa Livramento ◽  
Horácio Fernandes ◽  
Carlos Silva ◽  
Nobumitsu Shohoji ◽  
...  
Keyword(s):  
Pure Copper ◽  
Thermal Stabilization ◽  
Hot Extrusion ◽  
Processing Parameters ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Optimal Processing ◽  
Novel Approach ◽  
Transmission Electron

Nanostructured copper-diamond composites can be tailored for thermal management applications at high temperature. A novel approach based on multiscale diamond dispersions is proposed for the production of this type of materials: a Cu-nDiamond composite produced by high-energy milling is used as a nanostructured matrix for further dispersion of micrometer sized diamond. The former offers strength and microstructural thermal stability while the latter provides high thermal conductivity. A series of Cu-nDiamond mixtures have been milled to define the minimum nanodiamond fraction suitable for matrix refinement and thermal stabilization. A refined matrix with homogenously dispersed nanoparticles could be obtained with 4 at.% nanodiamond for posterior mixture with mDiamond and subsequent consolidation. In order to define optimal processing parameters, consolidation by hot extrusion has been carried out for a Cu-nDiamond composite and, in parallel, for a mixture of pure copper and mDiamond. The materials produced were characterized by X-ray diffraction, scanning and transmission electron microscopy and microhardness measurements.

Effect of Nitridation Magnetic Properties of Nanocrystalline Fe-Co Alloy Powders

2010 ◽  
Vol 654-656 ◽  
pp. 1106-1109
Author(s):  
Ya Qiong He ◽  
Chang Hui Mao ◽  
Jian Yang
Keyword(s):  
Grain Size ◽  
Magnetic Properties ◽  
Alloy Powder ◽  
High Energy ◽  
X Ray Diffraction ◽  
Powder Mixtures ◽  
X Ray ◽  
Transmission Electron ◽  
Nitridation Temperature ◽  
Microstructure And Magnetic Properties

Nanocrystalline Fe-Co alloy powders, which were prepared by high-energy mechanical milling, were nitrided under the mixing gas of NH3/H2 in the temperature range from 380°C to 510°C. X-ray diffraction (XRD) was used to analyze the grain size and reaction during the processing. The magnetic properties of the nitrided powders were measured by Vibrating Sample Magnetometer (VSM). The results show that with the appearance of Fe4N phase after nitride treatment, and the grain-size of FeCo phase decreases with the increase of nitridation temperature between 380°C to 450°C.The saturation magnetization of nitrided alloy powder treated at 480°C is about 18% higher than that of the initial Fe-Co alloy powder, accompanied by the reduction of the coercivity. Transmission electron microscope (TEM) was used, attempting to further analyze the effect of Fe4N phase on microstructure and magnetic properties of the powder mixtures.

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