Test of Kinetic Models for Interface Velocity, Temperature, and Solute Trapping in Rapid Solidification

1995 ◽  
Vol 398 ◽  
Author(s):  
J.A. Kittl ◽  
M.J. Aziz ◽  
D.P. Brunco ◽  
M.O. Thompson
Keyword(s):  
Rapid Solidification ◽  
Pulsed Laser ◽  
Interface Velocity ◽  
Alloy System ◽  
Solute Drag ◽  
Temperature Function ◽  
Continuous Growth ◽  
Solute Trapping ◽  
Interface Kinetics ◽  
Test Models

ABSTRACTDuring rapid solidification, deviations from local interfacial equilibrium are manifested by solute trapping and interfacial undercooling. Both the solute trapping function and the interface velocity-temperature function have been measured in the Si:As alloy system following pulsed laser melting, permitting us to test models for nonequilibrium interface kinetics. The results are consistent with the Continuous Growth Model “without solute drag” of Aziz and Kaplan and are inconsistent with models that incorporate solute drag effects during solidification.

Solute trapping and solute drag in a phase-field model of rapid solidification

1998 ◽  
Vol 58 (3) ◽  
pp. 3436-3450 ◽  
Author(s):  
N. A. Ahmad ◽  
A. A. Wheeler ◽  
W. J. Boettinger ◽  
G. B. McFadden
Keyword(s):  
Rapid Solidification ◽  
Phase Field ◽  
Field Model ◽  
Phase Field Model ◽  
Solute Drag ◽  
Solute Trapping

Phase Field Modeling of Solute Trapping in a Al-Sn Alloy during Rapid Solidification

2014 ◽  
Vol 794-796 ◽  
pp. 740-745 ◽  
Author(s):  
Xiong Yang ◽  
Li Jun Zhang ◽  
Yong Du
Keyword(s):  
Rapid Solidification ◽  
Phase Field ◽  
Field Model ◽  
Kinetic Equations ◽  
Phase Field Model ◽  
Interface Velocity ◽  
Interface Energy ◽  
Phase Field Simulation ◽  
Solute Trapping ◽  
Field Simulation

During rapid solidification, interfaces are often driven far from equilibrium and the "solute trapping" phenomenon is usually observed. Very recently, a phase field model with finite interface dissipation, in which separate kinetic equations are assigned to each phase concentration instead of an equilibrium partitioning condition, has been newly developed. By introducing the so-called interface permeability, the phase field model with finite interface dissipation can nicely describe solute trapping during solidification in the length scale of micrometer. This model was then applied to perform a phase field simulation in a Al-Sn alloy (Al-0.2 at.% Sn) during rapid solidification. A simplified linear phase diagram was constructed for providing the reliable driving force and potential information. The other thermophysical parameters, such as interface energy and diffusivities, were directly taken from the literature. As for the interface mobility, it was estimated via a kinetic relationship in the present work. According to the present phase field simulation, the interface velocity increases as temperature decreases, resulting in the enhancement of solute trapping. Moreover, the simulated solute segregation coefficients in Al-0.2 at.% Sn can nicely reproduce the experimental data.

scholarly journals Interface velocity dependent solute trapping and phase selection during rapid solidification of laser melted hypo-eutectic Al-11at.%Cu alloy

2020 ◽  
Vol 195 ◽  
pp. 341-357 ◽  
Author(s):  
Vishwanadh Bathula ◽  
Can Liu ◽  
Kai Zweiacker ◽  
Joseph McKeown ◽  
Jörg M.K. Wiezorek
Keyword(s):  
Rapid Solidification ◽  
Interface Velocity ◽  
Phase Selection ◽  
Solute Trapping ◽  
Cu Alloy

scholarly journals Aperiodic stepwise growth model for the velocity and orientation dependence of solute trapping

1987 ◽  
Vol 2 (4) ◽  
pp. 524-527 ◽  
Author(s):  
L. M. Goldman ◽  
M. J. Aziz
Keyword(s):  
Diffusion Coefficient ◽  
Rapid Solidification ◽  
Growth Model ◽  
Silicon Crystal ◽  
Interface Velocity ◽  
Orientation Dependence ◽  
Atomistic Model ◽  
Continuous Growth ◽  
Random Intervals ◽  
Interface Orientation

An atomistic model for the dependence on interface orientation and velocity v of the solute partition coefficient k during rapid solidification is developed in detail. Starting with a simple stepwise growth model, the simple continuous growth model result is obtained for k(v) when the growth steps are assumed to pass at random intervals rather than periodically. The model is applied to rapid solidification of silicon. Crystal growth at all orientations is assumed to occur by the rapid lateral passage of (111) steps at speeds determined by the interface velocity and orientation. Solute escape is parametrized by a diffusion coefficient at the edge of the moving step and a diffusion coefficient at the terrace, far from the step edge. The model results in an excellent fit to data for the velocity and orientation dependence of k of Bi in Si.

Solute Trapping of Ge in Al

1990 ◽  
Vol 205 ◽  
Author(s):  
Patrick M. Smith ◽  
Jeffrey A. West ◽  
Michael J. Aziz
Keyword(s):  
Film Growth ◽  
Depth Profiling ◽  
Pulsed Laser ◽  
Significant Degree ◽  
Al Alloys ◽  
Continuous Growth ◽  
Solute Trapping ◽  
Conductance Technique ◽  
Lateral Film

AbstractPartitioning during rapid solidification of dilute Al-Ge alloys has been investigated. Implanted thin films of Al have been pulsed-laser melted to obtain solidification at velocities in the range of 0.01 m/s to 3.3 m/s, as measured by the transient conductance technique. Previous and subsequent Rutherford Backscattering depth profiling of the Ge solute in the Al alloys has been used to determine the nonequilibrium partition coefficient k. A significant degree of lateral film growth during solidification confines determination of k to the placing of an upper bound of 0.22 on k for solidification velocities in this range. We place a lower limit of 10m/s on the “diffusive velocity,” which locates the transition from solute paritioning to solute trapping in the Continuous Growth Model.

scholarly journals Solute trapping and solute drag in phase-field model of rapid solidification

1998 ◽  
Author(s):  
N A Ahmad ◽  
A A Wheeler ◽  
W J Boettinger ◽  
G B McFadden
Keyword(s):  
Rapid Solidification ◽  
Phase Field ◽  
Field Model ◽  
Phase Field Model ◽  
Solute Drag ◽  
Solute Trapping

Phase-field modeling of an abrupt disappearance of solute drag in rapid solidification

2015 ◽  
Vol 90 ◽  
pp. 282-291 ◽  
Author(s):  
Haifeng Wang ◽  
P.K. Galenko ◽  
Xiao Zhang ◽  
Wangwang Kuang ◽  
Feng Liu ◽  
...  
Keyword(s):  
Rapid Solidification ◽  
Phase Field ◽  
Solute Drag ◽  
Phase Field Modeling ◽  
Field Modeling

scholarly journals Overheating In Silicon During Pulsed-Laser Irradiation?

1985 ◽  
Vol 51 ◽  
Author(s):  
B. C. Larson ◽  
J. Z. Tischler ◽  
D. M. Mills
Keyword(s):  
Laser Irradiation ◽  
Thermal Strain ◽  
Pulsed Laser ◽  
Interface Velocity ◽  
High Energy ◽  
Time Resolved ◽  
Synchrotron Source ◽  
Zero Velocity ◽  
The Difference ◽  
Pulsed Laser Irradiation

ABSTRACTNanosecond resolution time-resolved x-ray diffraction measurements of thermal strain have been used to measure the interface temperatures in silicon during pulsed-laser irradiation. The pulsed-time-structure of the Cornell High Energy Synchrotron Source (CHESS) was used to measure the temperature of the liquid-solid interface of <111> silicon during melting with an interface velocity of 11 m/s, at a time of near zero velocity, and at a regrowth velocity of 6 m/s. The results of these measurements indicate 110 K difference between the temperature of the interface during melting and regrowth, and the measurement at zero velocity shows that most of the difference is associated with undercooling during the regrowth phase.

Transient Conductance Measurements During Pulsed Laser Annealing

1981 ◽  
Vol 4 ◽  
Author(s):  
M. O. Thompson ◽  
G. J. Galvin ◽  
J. W. Mayer ◽  
R. B. Hammond ◽  
N. Paulter ◽  
...  
Keyword(s):  
Single Crystal ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Interface Velocity ◽  
Laser Pulses ◽  
Molten Layer ◽  
Pulsed Laser Annealing ◽  
Complete Melting ◽  
Solid Liquid Interface ◽  
Solid Liquid

ABSTRACTMeasurements were made of the conductance of single crystal Au-doped Si and silicon-on-sapphire (SOS) during irradiation with 30 nsec ruby laser pulses. After the decay of the photoconductive response, the sample conductance is determined primarily by the thickness and conductivity of the molten layer. For the single crystal Au-doped Si, the solid-liquid interface velocity during recrystallization was determined from the current transient to be 2.5 m/sec for energy densities between 1.9 and 2.6 J/cm2, in close agreement with numerical simulations based on a thermal model of heat flow. SOS samples showed a strongly reduced photoconductive response, allowing the melt front to be observed also. For complete melting of a 0.4 μm Si layer, the regrowth velocity was 2.4 m/sec.

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