Open Air Fabrication Process of Cu Thin Films on Teflon Surface Using Arf Excimer Laser Irradiation

1995 ◽  
Vol 397 ◽  
Author(s):  
M. Okoshi ◽  
K. Toyoda ◽  
M. Murahara

ABSTRACTCopper thin films were selectively fabricated on a Teflon surface by using an ArF excimer laser and a Cu electroless plating solution in open air. Photo-excited C-F bonds of the surface were effectively defluorinated with hydrogen atoms which were photodissociated from the Cu solution. The dangling bonds of the defluorinated carbon atoms were combined with the oxgen and the copper atoms which were also photodissociated. Thus, C-O-Cu bonds were formed on the surface and functioned as Cu nuclei for an electroless plating. The Cu thin films were successfully deposited in electroless plating solution only on the Cu nuclei.

1996 ◽  
Vol 35 (Part 2, No. 11B) ◽  
pp. L1473-L1475 ◽  
Author(s):  
Kuninori Kitahara ◽  
Katsuyuki Suga ◽  
Akito Hara ◽  
Kazuo Nakajima

1995 ◽  
Vol 34 (Part 2, No. 11A) ◽  
pp. L1482-L1485 ◽  
Author(s):  
Kazuo Nakamae ◽  
Kou Kurosawa ◽  
Yasuo Takigawa ◽  
Wataru Sasaki ◽  
Yasukazu Izawa ◽  
...  

2013 ◽  
Vol 210 (12) ◽  
pp. 2729-2735 ◽  
Author(s):  
Ingmar Höger ◽  
Thomas Schmidt ◽  
Anja Landgraf ◽  
Martin Schade ◽  
Annett Gawlik ◽  
...  

2000 ◽  
Vol 154-155 ◽  
pp. 622-626 ◽  
Author(s):  
F Benı́tez ◽  
J Roldán ◽  
V Trtı́k ◽  
C Guerrero ◽  
C Ferrater ◽  
...  

1999 ◽  
Vol 138-139 ◽  
pp. 145-149 ◽  
Author(s):  
P Mengucci ◽  
G Barucca ◽  
E D'Anna ◽  
M Jergel ◽  
S Luby ◽  
...  

2007 ◽  
Vol 254 (4) ◽  
pp. 971-974 ◽  
Author(s):  
O. Van Overschelde ◽  
R. Snyders ◽  
M. Wautelet

2008 ◽  
Vol 93 (1) ◽  
pp. 51-55 ◽  
Author(s):  
Tomohiko Nakajima ◽  
Tetsuo Tsuchiya ◽  
Toshiya Kumagai

1994 ◽  
Vol 345 ◽  
Author(s):  
Yasutaka Uchida ◽  
Masakiyo Matsumura

AbstractXPS measurement showed that undesirable SiNH component was reduced drastically from the low-temperature deposited SiN surface by intense ArF excimer-laser irradiation. Although the improved layer was as thin as 15nm, it was very effective to stop diffusion of N atoms from the bottom SiN layer to the top Si layer during the excimer-laser recrystallization step. N-diffused Si layer at the Si/SiN interface was less than the XPS resolution limit for the pre-annealed SiN structure, but about 5nm thick. As a result, the field-effect mobility of the poly-Si/SiN TFT was increased drastically by laser-irradiation to SiN film. Annealing characteristics are also presented for the various SiN film thicknesses and for both the ArF and KrF excimer-laser lights.


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