Laser Direct Writing of Aluminum Conductor Lines from a Liquid Phase Precursor

1995 ◽  
Vol 397 ◽  
Author(s):  
Qijun Chen ◽  
Susan D. Allen
Keyword(s):  
Growth Rate ◽  
Liquid Phase ◽  
Dwell Time ◽  
Nonlinear Heat Equation ◽  
Direct Writing ◽  
Experimental Conditions ◽  
Vertical Growth ◽  
Si Substrates ◽  
Vertical Growth Rate ◽  
Phase Precursor

ABSTRACTAluminum conductor lines were deposited on Si substrates from liquid phase triisobutylaluminum (TIBA) using a scanned argon ion laser. The vertical growth rate of Al lines initially increased, then decreased with increasing dwell time. The maximum vertical growth rate occurred at a particular dwell time depending upon the laser power. Lower vertical growth rates at longer dwell times are propably caused by the depletion of the reactant at the reaction site. A volcano deposit shape was observed, which became more pronounced as dwell time increased. The conductivity of the as-deposited Al lines decreased with increasing dwell time for our experimental conditions. To study the deposition kinetics and calculate the activation energy, the temperature rise on the Si surface was calculated by solving the nonlinear heat equation using finite difference method.

Tests of the real-time vertical growth rate calculation on EAST

2020 ◽  
Vol 29 (6) ◽  
pp. 065204
Author(s):  
Na-Na Bao ◽  
Yao Huang ◽  
Jayson Barr ◽  
Zheng-Ping Luo ◽  
Yue-Hang Wang ◽  
...  
Keyword(s):  
Growth Rate ◽  
Real Time ◽  
The Real ◽  
Vertical Growth ◽  
Vertical Growth Rate ◽  
Rate Calculation

Design of real-time feedback control of vertical growth rate on EAST

2021 ◽  
Vol 32 (7) ◽  
Author(s):  
Na-Na Bao ◽  
Yao Huang ◽  
Bing-Jia Xiao ◽  
Qi-Ping Yuan ◽  
Zheng-Ping Luo ◽  
...  
Keyword(s):  
Growth Rate ◽  
Feedback Control ◽  
Real Time ◽  
Vertical Growth ◽  
Vertical Growth Rate

Experimental determination of dependence of vertical growth rate on surface supersaturation in GaAs(001) microchannel epitaxy and growth optimization

2016 ◽  
Vol 440 ◽  
pp. 13-16 ◽  
Author(s):  
Masafumi Tomita ◽  
Yosuke Mizuno ◽  
Hiroyuki Takakura ◽  
Daisuke Kambayashi ◽  
Shigeya Naritsuka ◽  
...  
Keyword(s):  
Growth Rate ◽  
Experimental Determination ◽  
Vertical Growth ◽  
Growth Optimization ◽  
Vertical Growth Rate

scholarly journals Genetic polymorphisms may influence the vertical growth rate of melanoma

2018 ◽  
Vol 9 (17) ◽  
pp. 3078-3083
Author(s):  
Mariusz Sikora ◽  
Lidia Rudnicka ◽  
Barbara Borkowska ◽  
Agnieszka Kardynał ◽  
Monika Słowińska ◽  
...  
Keyword(s):  
Growth Rate ◽  
Genetic Polymorphisms ◽  
Vertical Growth ◽  
Vertical Growth Rate

scholarly journals Modeling of abnormal grain growth in (111) oriented and nanotwinned copper

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
A. M. Gusak ◽  
Kuan-Ju Chen ◽  
K. N. Tu ◽  
Chih Chen
Keyword(s):  
Growth Rate ◽  
Kinetic Analysis ◽  
Grain Growth ◽  
Abnormal Grain Growth ◽  
Lateral Growth ◽  
Cu Films ◽  
Vertical Growth ◽  
Vertical Growth Rate ◽  
Lateral Growth Rate

AbstractUni-modal, not bi-modal, of abnormal grain growth has been observed in (111) oriented and nano-twinned Cu films. Because of the highly anisotropic microstructure, our kinetic analysis and calculation showed that it is the mobility which dominates the uni-modal growth, in which the lateral growth rate can be two orders of magnitude higher than the vertical growth rate. As a consequence, the abnormal grain growth has been converted from bi-modal to uni-modal.

scholarly journals Growth and Carbon Metabolism of Tall Fescue and Zoysiagrass as Affected by Deficit Irrigation

HortScience ◽  
2007 ◽  
Vol 42 (2) ◽  
pp. 378-381 ◽  
Author(s):  
Jinmin Fu ◽  
Jack Fry ◽  
Bingru Huang
Keyword(s):  
Growth Rate ◽  
Water Use ◽  
Tall Fescue ◽  
Deficit Irrigation ◽  
Tiller Number ◽  
Vertical Growth ◽  
Turf Quality ◽  
Vertical Growth Rate ◽  
Use Efficiency ◽  
Irrigation Levels

Understanding turfgrass physiological responses to deficit irrigation will help explain potential effects of this practice on turf quality and subsequent stresses. The objective of this study was to investigate the influence of deficit irrigation growth and physiology of ‘Falcon II’ tall fescue (Festuca arundinacea Schreb) and ‘Meyer’ zoysiagrass (Zoysia japonica Steud). Turf was subjected to deficit irrigation levels of 20%, 40%, 60%, 80%, and 100% of actual evapotranspiration (ET) from June to Sept. 2001 and 2002 in Manhattan, Kans. In an earlier study, minimum deficit irrigation levels required to maintain acceptable quality (MDIL) were determined. We compared growth and physiological parameters at these MDIL with turf irrigated at 100% ET. Tall fescue had a lower canopy vertical growth rate (30% lower), canopy net photosynthesis (Pn, 14% lower), and whole-plant respiration (Rw, 11% lower) in 1 of 2 years when irrigated at the MDIL compared with 100% ET; tiller number was not reduced at the MDIL. Water use efficiency (μmol CO2 per mmol H2O) in tall fescue increased by 15% at the MDIL relative to turf receiving 100% ET in 1 of 2 years. In zoysiagrass, the MDIL had no effect on any of the growth or physiological parameters measured. Reductions in canopy vertical growth rate at the MDIL in tall fescue during deficit irrigation would likely reduce mowing requirements. Across all deficit irrigation levels, Pn was more sensitive to deficit irrigation in both grasses than was Rw, which could potentially contribute to declines in canopy vertical growth rate, tiller number, and turf quality. Zoysiagrass exhibited higher water use efficiency than tall fescue, particularly at irrigation levels 60% or more ET.

Method of GaAs Growth on Single Crystal Si Substrate

1992 ◽  
Vol 263 ◽  
Author(s):  
Valery V. Dorogan ◽  
V.A. Kosyak ◽  
V.G. Trofim
Keyword(s):  
Growth Rate ◽  
Liquid Phase ◽  
Substrate Surface ◽  
Deposition Process ◽  
Temperature Gradients ◽  
Si Substrate ◽  
Island Growth ◽  
Si Substrates ◽  
Epitaxial Deposition ◽  
Substrate Dissolution

ABSTRACTIn the proposed method space and time temperature gradients are used for GaAs epitaxial deposition on Si substrates from liquid phase. Minimal Si substrate dissolution and preferential GaAs deposition from the liquid phase on Si substrate can be obtained by selecting dissolvents, requiring necessary gradients temperature values and times of active phases interaction. Because of nonuniformities in the etched Si substrate surface act as crystallization centres, the deposition process begins from GaAs island growth. Due to the dominate tangential growth rate, the separate single crystals coalesce into a GaAs monolayer.

Silicon layers grown over SiO2 by liquid phase epitaxy: Electron Microscopical study

1990 ◽  
Vol 48 (4) ◽  
pp. 566-567
Author(s):  
F. Banhart ◽  
F.O. Phillipp ◽  
R. Bergmann ◽  
E. Czech ◽  
M. Konuma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Plasma Etching ◽  
Liquid Phase Epitaxy ◽  
Three Dimensional ◽  
Microscopical Study ◽  
Sample Temperature ◽  
Structural Defects ◽  
Si Substrates ◽  
Etched Surface

Defect-free silicon layers grown on insulators (SOI) are an essential component for future three-dimensional integration of semiconductor devices. Liquid phase epitaxy (LPE) has proved to be a powerful technique to grow high quality SOI structures for devices and for basic physical research. Electron microscopy is indispensable for the development of the growth technique and reveals many interesting structural properties of these materials. Transmission and scanning electron microscopy can be applied to study growth mechanisms, structural defects, and the morphology of Si and SOI layers grown from metallic solutions of various compositions.The treatment of the Si substrates prior to the epitaxial growth described here is wet chemical etching and plasma etching with NF3 ions. At a sample temperature of 20°C the ion etched surface appeared rough (Fig. 1). Plasma etching at a sample temperature of −125°C, however, yields smooth and clean Si surfaces, and, in addition, high anisotropy (small side etching) and selectivity (low etch rate of SiO2) as shown in Fig. 2.

scholarly journals LED Illumination Spectrum Manipulation for Increasing the Yield of Sweet Basil (Ocimum basilicum L.)

Plants ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 344
Author(s):  
Md Momtazur Rahman ◽  
Mikhail Vasiliev ◽  
Kamal Alameh
Keyword(s):  
Growth Rate ◽  
Fold Increase ◽  
Photosynthetic Photon Flux Density ◽  
Ocimum Basilicum ◽  
Photon Flux ◽  
Photon Flux Density ◽  
White Led ◽  
Experimental Conditions ◽  
Sweet Basil ◽  
Optimal Illumination

Manipulation of the LED illumination spectrum can enhance plant growth rate and development in grow tents. We report on the identification of the illumination spectrum required to significantly enhance the growth rate of sweet basil (Ocimum basilicum L.) plants in grow tent environments by controlling the LED wavebands illuminating the plants. Since the optimal illumination spectrum depends on the plant type, this work focuses on identifying the illumination spectrum that achieves significant basil biomass improvement compared to improvements reported in prior studies. To be able to optimize the illumination spectrum, several steps must be achieved, namely, understanding plant biology, conducting several trial-and-error experiments, iteratively refining experimental conditions, and undertaking accurate statistical analyses. In this study, basil plants are grown in three grow tents with three LED illumination treatments, namely, only white LED illumination (denoted W*), the combination of red (R) and blue (B) LED illumination (denoted BR*) (relative red (R) and blue (B) intensities are 84% and 16%, respectively) and a combination of red (R), blue (B) and far-red (F) LED illumination (denoted BRF*) (relative red (R), blue (B) and far-red (F) intensities are 79%, 11%, and 10%, respectively). The photosynthetic photon flux density (PPFD) was set at 155 µmol m−2 s−1 for all illumination treatments, and the photoperiod was 20 h per day. Experimental results show that a combination of blue (B), red (R), and far-red (F) LED illumination leads to a one-fold increase in the yield of a sweet basil plant in comparison with only white LED illumination (W*). On the other hand, the use of blue (B) and red (R) LED illumination results in a half-fold increase in plant yield. Understanding the effects of LED illumination spectrum on the growth of plant sweet basil plants through basic horticulture research enables farmers to significantly improve their production yield, thus food security and profitability.

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