Crystallization of Amorphous Titanium Oxide Thin Films by Pulsed UV-Laser Irradiation

1995 ◽  
Vol 397 ◽  
Author(s):  
Yo Ichikawa ◽  
Hideaki Ada Chi ◽  
Kentaro Setsune ◽  
Syun-Ichiro Kawashima ◽  
Koichi Kugimiya
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Laser Irradiation ◽  
Optical Transmission ◽  
Laser Pulses ◽  
Uv Laser ◽  
Before And After ◽  
Krf Excimer Laser ◽  
Quartz Substrates ◽  
Local Crystal Structure

ABSTRACTEffects of ultraviolet (UV) laser irradiation on the local crystal structure have been investigated for amorphous Ti-O thin films sputtered on ST-cut quartz substrates. The irradiation was conducted with a pulsed KrF excimer laser of 248nm in wavelength. There were few changes in the optical transmission spectra of the films before and after the irradiation. The crystal structure of the films was characterized by electron diffraction, XPS and EXAFS analyses. The results obtained from these analyses suggest the films gradually crystallize to a TiO2 crystal with the rutile type structure by the increasing of the laser pulses.

CVD nanodiamond thin films as high yield photocathodes driven by UV laser pulses

2014 ◽  
Author(s):  
Jean-Paul Mazellier ◽  
Cyril Di Giola ◽  
Pierre Legagneux ◽  
Clement Hebert ◽  
Emmanuel Scorsonne ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Pulses ◽  
High Yield ◽  
Uv Laser

Highly Conductive and Optically Transparent Polycrystalline Iridium Oxide Thin Films Grown by Reactive Pulsed Laser Deposition

1997 ◽  
Vol 472 ◽  
Author(s):  
M.A. El Khakani ◽  
M. Chaker
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Optical Transmission ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Structure Morphology ◽  
Quartz Substrates

ABSTRACTReactive pulsed laser deposition has been used to deposit IrO2 thin films on both SiO2 and fused quartz substrates, by ablating a metal iridium target in oxygen atmosphere. At a KrF laser intensity of about 1.7 × 109 W/cm2, IrO2 films were deposited at substrate deposition temperatures ranging from room-temperature to 700 °C under an optimum oxygen ambient pressure of 200 mTorr. The structure, morphology, electrical resistivity and optical transmission of the deposited films were characterized as a function of their deposition temperature (Td). High quality IrO2 films are obtained in the 400–600 °C deposition temperature range. They are polycrystalline with preferred orientations, depending on the substrate, and show a dense granular morphology. At a Td as low as 400 °C, highly conductive IrO2 films with room-temperature resistivities as low as (42±6) μΩ cm are obtained. Over the 300–600 °C Td range, the IrO2 films were found to exhibit a maximum optical transmission at 450 °C (∼ 45 % at 500 nm for 80 nm-thick films).

Large In-Plane Lattice Expansion in NiAs-MnSb Thin Films Induced by ns Laser Recrystallization

1995 ◽  
Vol 384 ◽  
Author(s):  
Yukiko Kubota ◽  
Grace L. Gorman ◽  
Ernesto E. Marinero
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Strong Influence ◽  
Laser Pulses ◽  
Lateral Growth ◽  
Size Refinement ◽  
Laser Recrystallization ◽  
Krf Excimer Laser ◽  
Sputter Deposited

ABSTRACTSputter deposited MnSb thin films were annealed utilizing KrF excimer laser pulses (16ns), and the resulting structural and magnetic changes investigated. These changes are compared to those observed when the samples are subjected to isothermal and rapid thermal annealing treatments. Isothermal and rapid thermal annealing induce significant lateral grain growth, whereas the laser treatment produces vertical grain size refinement with no appreciable lateral growth. Annealing is shown to increase the hexagonal c-axis, reaching an expansion value of 7% for the laser annealed samples. This c-axis expansion has a strong influence on the magnetic properties of the thin films. Mechanisms for the c-axis expansion are discussed.

Local crystal structure and mechanical properties of sputtered Ti-doped AlN thin films

2018 ◽  
Vol 20 (47) ◽  
pp. 29817-29825 ◽  
Author(s):  
Padmalochan Panda ◽  
Nanda Gopala Krishna ◽  
Parasmani Rajput ◽  
R. Ramaseshan
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Mechanical Properties ◽  
Absorption Spectroscopy ◽  
X Ray ◽  
X Ray Absorption ◽  
Local Crystal Structure

In this article, we predominantly report the investigation of the local crystal structure around a Ti dopant by X-ray absorption spectroscopy (XAS) and the nano-mechanical properties of co-sputtered Al1−xTixN (x = 0 to 4%) thin films.

Gradual modification of ITO particle's crystal structure and optical properties by pulsed UV laser irradiation in a free liquid jet

2017 ◽  
Vol 46 (18) ◽  
pp. 6039-6048 ◽  
Author(s):  
Marcus Lau ◽  
Thomas Straube ◽  
A. Vikas Aggarwal ◽  
Ulrich Hagemann ◽  
Bernardo de Oliveira Viestel ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Optical Properties ◽  
Laser Irradiation ◽  
Liquid Jet ◽  
Uv Laser ◽  
Particle Properties

Engineering of ITO particle properties by laser irradiation.

Mechanism of Laser-Assisted Evaporation of II-VI Semiconductors

1983 ◽  
Vol 29 ◽  
Author(s):  
J. T. Cheung
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Mass Spectroscopy ◽  
High Power ◽  
Nd:Yag Laser ◽  
Thermal Evaporation ◽  
Laser Pulses ◽  
High Power Laser ◽  
Power Laser ◽  
Evaporation Mechanism

ABSTRACTThe evaporation mechanism of CdTe, HgTe and HgO.7CdO.3Te under high power laser irradiation was investigated using mass spectroscopy. Results were compared to thermal evaporation. Thermal evaporation yields Te molecules and Cd(Hg) atoms. In the case of HgTe and Hgo.7Cdo.3Te, the evaporation is noncongruent. Evaporation induced by the irradiation of 1.06 μm Nd:YAG laser pulses evolves atomic Hg, Cd and Te congruently. The dissociative and congruent nature of this process makes it a very attractive technique for depositing thin films.

scholarly journals Nanostructuring of GeTiO amorphous films by pulsed laser irradiation

2015 ◽  
Vol 6 ◽  
pp. 893-900 ◽  
Author(s):  
Valentin Serban Teodorescu ◽  
Cornel Ghica ◽  
Adrian Valentin Maraloiu ◽  
Mihai Vlaicu ◽  
Andrei Kuncser ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Pulse ◽  
Laser Irradiation ◽  
Film Surface ◽  
Laser Pulses ◽  
Pulse Action ◽  
Pulse Field ◽  
Fast Diffusion ◽  
Absorption Length ◽  
Modified Layer

Laser pulse processing of surfaces and thin films is a useful tool for amorphous thin films crystallization, surface nanostructuring, phase transformation and modification of physical properties of thin films. Here we show the effects of nanostructuring produced at the surface and under the surface of amorphous GeTiO films through laser pulses using fluences of 10–30 mJ/cm2. The GeTiO films were obtained by RF magnetron sputtering with 50:50 initial atomic ratio of Ge:TiO2. Laser irradiation was performed by using the fourth harmonic (266 nm) of a Nd:YAG laser. The laser-induced nanostructuring results in two effects, the first one is the appearance of a wave-like topography at the film surface, with a periodicity of 200 nm and the second one is the structure modification of a layer under the film surface, at a depth that is related to the absorption length of the laser radiation. The periodicity of the wave-like relief is smaller than the laser wavelength. In the modified layer, the Ge atoms are segregated in spherical amorphous nanoparticles as a result of the fast diffusion of Ge atoms in the amorphous GeTiO matrix. The temperature estimation of the film surface during the laser pulses shows a maximum of about 500 °C, which is much lower than the melting temperature of the GeTiO matrix. GeO gas is formed at laser fluences higher than 20 mJ/cm2 and produces nanovoids in the laser-modified layer at the film surface. A glass transition at low temperatures could happen in the amorphous GeTiO film, which explains the formation of the wave-like topography. The very high Ge diffusivity during the laser pulse action, which is characteristic for liquids, cannot be reached in a viscous matrix. Our experiments show that the diffusivity of atomic and molecular species such as Ge and GeO is very much enhanced in the presence of the laser pulse field. Consequently, the fast diffusion drives the formation of amorphous Ge nanoparticles through the segregation of Ge atoms in the GeTiO matrix. The nanostructuring effects induced by the laser irradiation can be used in functionalizing the surface of the films.

Crystal Structures and Surface Morphologies of LaGaO3-Based Epitaxial Thin Films Grown by a Pulse Laser Deposition Method

2013 ◽  
Vol 582 ◽  
pp. 153-156 ◽  
Author(s):  
Ayuko Matsunaga ◽  
Yuuki Kitanaka ◽  
Ryotaro Inoue ◽  
Yuji Noguchi ◽  
Masaru Miyayama ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer ◽  
Laser Pulses ◽  
Lattice Parameter ◽  
Laser Deposition ◽  
Pulse Laser Deposition Method ◽  
Epitaxial Thin Films ◽  
Out Of Plane ◽  
Krf Excimer Laser ◽  
Surface Morphologies

High-quality La0.84Sr0.16Ga0.26Mg0.74O3-δ (LSGM) epitaxial thin films were successfully grown on (100)-SrTiO3 (STO) substrates at a temperature of 800 °C by a pulsed laser deposition (PLD) method with KrF excimer laser pulses at an ozone pressure of 1.3 × 103 Pa. X-ray diffraction rocking curve measurements showed that the LSGM films had a full-width at half-maximum (FWHM) value of 0.11 °for out-of-plane 002 reflection, which was smaller than that reported for LaGaO3 films grown by atomic layer deposition methods (0.18 o). The reciprocal spaces mapping of 103 refraction showed that the LSGM films had a slightly larger lattice parameter a (out-of-plane) of 0.393 nm than a// (in-plane) of 0.391 nm.

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