Control of Threshold Voltage on the Excimer Laser Annealed Poly-Si Tfts by Oxygen Plasma Treatment on Poly-Si Surface

1995 ◽  
Vol 397 ◽  
Author(s):  
Jae-Ik Woo ◽  
Sang-Gul Lee ◽  
Dae-Gyu Moon ◽  
Chan-Hee Hong ◽  
Hoe-Sup Soh
Keyword(s):  
Plasma Treatment ◽  
Excimer Laser ◽  
Threshold Voltage ◽  
Oxygen Plasma ◽  
Treatment Time ◽  
Chemical Vapor ◽  
Gate Insulator ◽  
Oxygen Plasma Treatment ◽  
Oxide Deposition ◽  
Pressure Chemical

ABSTRACTOxygen plasma treatment was performed on the excimer laser annealed poly-Si surface, followed by gate oxide deposition with low pressure chemical vapor deposition (LPCVD) in order to control the threshold voltage of excimer laser annealed poly-Si thin film transistors (TFTs).Threshold voltages of n-channel TFTs increase from 0.4 to 2.8 V by varying the treatment time from 0 to 7 min. It is shown the effective charge density increased toward negative direction with increase of the treatment time.In addition to the increase of threshold voltage, the oxygen plasma treatment on the Si surface led to an increase in the deposition rate of LPCVD oxide films with an apparent reduction of carbon around the interface between gate insulator and poly-Si film after oxygen plasma treatment.

scholarly journals Influence of Oxygen–Plasma Treatment on In-Situ SiN/AlGaN/GaN MOSHEMT with PECVD SiO2 Gate Insulator

Materials ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 3968
Author(s):  
Cho ◽  
Cha ◽  
Kim
Keyword(s):  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Surface Condition ◽  
Chemical Vapor ◽  
High Electron Mobility Transistor ◽  
Gate Insulator ◽  
Oxygen Plasma Treatment ◽  
High Electron ◽  
Threshold Voltage Shift

The influence of oxygen–plasma treatment on in situ SiN/AlGaN/GaN MOS high electron mobility transistor with SiO2 gate insulator was investigated. Oxygen–plasma treatment was performed on in situ SiN, before SiO2 gate insulator was deposited by plasma-enhanced chemical vapor deposition (PECVD). DC I-V characteristics were not changed by oxygen plasma treatment. However, pulsed I-V characteristics were improved, showing less dispersion compared to non-treated devices. During short-term gate bias stress, the threshold voltage shift was also smaller in a treated device than in an untreated one. X-ray photoemission spectroscopy also revealed that SiO2 on in situ SiN with oxygen–plasma treatment has an O/Si ratio close to the theoretical value. This suggests that the oxygen plasma treatment-modified surface condition of the SiN layer is favorable to SiO2 formation by PECVD.

High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Breakdown Voltage ◽  
Oxygen Plasma ◽  
Cutoff Frequency ◽  
Chemical Vapor ◽  
Current Gain ◽  
Organic Chemical ◽  
Oxygen Plasma Treatment ◽  
Gan Hemt ◽  
High Breakdown Voltage

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

Transition from Metallic to Semiconducting Behavior in Oxygen Plasma-treated Single-layer Graphene

2011 ◽  
Vol 1336 ◽  
Author(s):  
Amirhasan Nourbakhsh ◽  
Mirco Cantoro ◽  
Tom Vosch ◽  
Geoffrey Pourtois ◽  
Johan Hofkens ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Treatment Time ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Oxygen Plasma Treatment ◽  
Pristine Graphene ◽  
Layer Graphene ◽  
Epoxy Groups ◽  
Semiconducting Behavior

ABSTRACTWe investigate the structural, optical and electrical properties of single-layer graphene exposed to oxygen plasma treatment. We find that the pristine semimetallic behavior of graphene disappears upon plasma treatment, in favour of the opening of a bandgap and the featuring of semiconducting properties. The metal-to-semiconductor transition observed appears to be dependent on the plasma treatment time. The semiconducting behavior is also confirmed by photoluminescence measurements. The opening of a bandgap in graphene is explained in terms of graphene surface functionalization with oxygen atoms, bonded as epoxy groups. Ab initio calculations of the density of states show more details about the oxygen–graphene interaction and its effects on the graphene optoelectronic properties, predicting no states near the Fermi level at increasing epoxy group density. The structural changes are also monitored by Raman spectroscopy, showing the progressive evolution of the sp2 character of pristine graphene to sp3, due to the lattice decoration with out-of-plane epoxy groups.

Enhanced Wettability of Nanocrystalline Diamond Films for Biocoating Applications

2012 ◽  
Vol 1395 ◽  
Author(s):  
Jason H. C. Yang ◽  
Kungen Teii
Keyword(s):  
Contact Angle ◽  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Film Surface ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Polar Component ◽  
Oxygen Plasma Treatment

ABSTRACTNanocrystalline diamond (NCD) films are prepared from Ar-rich/N2/CH4 and Ar-rich/H2/CH4 mixtures by microwave plasma-enhanced chemical vapor deposition, and further treated by microwave hydrogen and oxygen plasma exposures separately to enhance the wetting property. The hydrogen plasma treatment has small effect on the surface roughness, while the oxygen plasma treatment forms fine protrusions on the film surface. Results show that the wettability of the hydrogen plasma treated NCD film is nearly constant or little improvement as the polar component of the apparent surface free energy is close to the as-deposit NCD film. In contrast, the wettability of the oxygen plasma treated NCD film is improved dramatically such that the contact angle is reduced from 92º and 4.7º to almost 0º for water and 1-bromonaphthalene, respectively, and the polar component increases significantly to 34 mJ/m2. The low contact angle suggests that the film is considerably a cell adhesive friendly surface, which is essential in maintaining multicellular structure, and thus making it a favorable wetting surface for biological and biomedical applications.

scholarly journals Influence of Plasma Treatment to the Performance of Amorphous IGZO based Flexible Thin Film Transistors

2017 ◽  
Author(s):  
Long-long Chen ◽  
Xiang Sun ◽  
Ji-feng Shi ◽  
Xi-feng Li ◽  
Xing-wei Ding ◽  
...  
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Treatment Time ◽  
Gate Insulator ◽  
Field Effect Mobility ◽  
Flexible Displays ◽  
Plasma Species

Thin film transistors (TFTs) using In-Ga-Zn Oxide (IGZO) as active layer and the gate insulator was treated with NH3 plasma and N2O plasma, respectively, which is fabricated on flexible PI substrate in this work. The performance of IGZO TFTs with different plasma species and treatment time are investigated and compared. The experiment results show that the plasma species and treatment time play an important role in the threshold voltage, field-effect mobility, Ion/Ioff ratio, sub-threshold swing (SS) and bias stress stability of the devices. The TFT with a 10 seconds NH3 plasma treatment shows the best performance; specifically, threshold voltage of 0.34 V, field-effect mobility of 15.97 cm2/Vs, Ion/Ioff ratio of 6.33×107, and sub-threshold swing of 0.36 V/dec. The proposed flexible IGZO-TFTs in this paper can be used as driving devices in the next-generation flexible displays.

scholarly journals Hydrophobic modification of bacterial cellulose using oxygen plasma treatment and chemical vapor deposition

Cellulose ◽  
2020 ◽  
Vol 27 (18) ◽  
pp. 10733-10746 ◽  
Author(s):  
Salomé Leal ◽  
Cecília Cristelo ◽  
Sara Silvestre ◽  
Elvira Fortunato ◽  
Aureliana Sousa ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Plasma Treatment ◽  
Bacterial Cellulose ◽  
Vapor Deposition ◽  
Oxygen Plasma ◽  
Chemical Vapor ◽  
Oxygen Plasma Treatment ◽  
Hydrophobic Modification

Plasma Induced Chemical Changes at Silica Surfaces During Pre-Bonding Treatments

2001 ◽  
Vol 681 ◽  
Author(s):  
Darren M. Hansen ◽  
C.E. Albaugh ◽  
Peter D. Moran ◽  
T. F. Kuech
Keyword(s):  
Plasma Treatment ◽  
Treatment Time ◽  
Chemical Vapor ◽  
Sample Surface ◽  
Attenuated Total Reflection ◽  
Oh Groups ◽  
Silica Surfaces ◽  
Pressure Chemical ◽  
Plasma Treatment Time

ABSTRACTPlasma-treated and DI H2O rinsed oxide layers are commonly used in wafer bonding applications. Borosilicate glass (BSG) layers deposited by low-pressure chemical vapor deposition (LPCVD) treated with an O2 plasma in reactive ion etching (RIE) mode at 0.6 W/cm2 and rinsed with DI H2O readily bond to GaAs and Si. The chemical role of this pre-bonding treatment was investigated using attenuated total reflection Fourier transform infrared (ATR- FTIR) spectroscopy. The peak intensities for both the Si-O and B-O absorbance bands decreased in intensity as a result the plasma treatment consistent with the uniform sputter etching of BSG. The effect of changing the total plasma treatment time was investigated in terms of the total amount of material removed. Polarization-dependent ATR-FTIR revealed that the H2O/OH absorbance bands decreased in peak intensity with the OH groups preferentially oriented perpendicular to the sample surface after the plasma treatment. The subsequent DI H2O rinse restores the water to the surface while changing the surface BSG composition. ATR-FTIR studies suggest that for oxide compositions greater than 10 mole % B2O3, the top 4 nm of B2O3 was removed or leached from the oxide layer during the DI H2O rinse.

Influence of Oxygen Plasma Treatment on Surface Properties of Armos Fiber

2008 ◽  
Vol 373-374 ◽  
pp. 430-433 ◽  
Author(s):  
Ping Chen ◽  
Jing Wang ◽  
Cheng Shuang Zhang ◽  
Chun Lu ◽  
Zhen Feng Ding ◽  
...  
Keyword(s):  
Surface Energy ◽  
Plasma Treatment ◽  
Functional Groups ◽  
Interfacial Adhesion ◽  
Oxygen Plasma ◽  
Treatment Time ◽  
Fiber Surface ◽  
Aramid Fiber ◽  
Oxygen Plasma Treatment ◽  
Polar Functional Groups

Armos fiber (F-12 aramid fiber in paper) was provided with broad application foreground as reinforcement material for advanced composites in aviation and spaceflight field, due to its outstanding properties, such as high modulus, high strength, high temperature resistance, erosion resistance and so on. However, the exertion of property was still limited by slippery surface, low surface energy and weak interfacial adhesion performance. In this study, the effects of oxygen plasma treatment time on polar functional groups introduced onto the fiber surface, surface free energy and surface topographic images were discussed by X-ray photoelectron spectroscopy (XPS) analysis, dynamic contact angle analysis system (DCA) and atomic force microscopy (AFM), respectively. It was found that the content of oxygen element and polar functional groups on fiber surface were all increased obviously after oxygen plasma treatment. The content of oxygen element on surface for untreated F-12 aramid fiber was 11.13%, while it increased to 15.20% after oxygen plasma treatment for 10 min; The content of polar functional groups on surface for untreated F-12 aramid fiber was 28.14%, while it increased to 38.11% after oxygen plasma treatment for 10 min. The polar component (γp) of fiber surface energy increased sharply from 6.82 mN/m to 36.68 mN/m after 10 min plasma treatment, the total surface free energy was increased from 46.26 mN/m to 64.66 mN/m.The results indicated that oxygen plasma treatment had introduced a large amount of reactive functional groups onto the fiber surface, and these groups can form together as covalent bonding to improve the surface wettability and increase the surface energy of fibers. At the same time, oxygen plasma treatment was able to generate a mass of bulges and grooves on F-12 aramid fiber surface, which had an active effect on increasing the chemical bond and mechanical function between fiber and resin and enhancing the interfacial adhesion performance of composite. The fiber surface grooves had been increased with the time prolonging before 10 min while decreased after 10 min, the results maybe relate to partial organic on fiber surface melting. It had an adverse effect on the interfacial adhesion properties of composite. Therefore, the optimum plasma treatment time was between 5 min and 10 min.

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