Thin Films of Ferroelectrics Made by Pulsed Laser Deposition for Optoelectronic Applications

1995 ◽  
Vol 397 ◽  
Author(s):  
D.B. Chrisey ◽  
L.A. Knauss ◽  
J.S. Horwitz ◽  
R.C.Y. Auyeung ◽  
D. Knies ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Fiber Optic ◽  
Pulsed Laser ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Field Coupling ◽  
Optical Applications ◽  
Amorphous Quartz ◽  
Quartz Substrates

ABSTRACTWe have deposited ferroelectric thin films by pulsed laser deposition to be used as an inline optoelectronic modulator utilizing evanescent field coupling to a side-polished optical fiber. In order to satisfy waveguiding conditions, amorphous quartz substrates (n= 1.447) were necessary. Ferroelectric films of (Pb0.91La0.90)(Zr0.65,Ti0.35)O3, Pb0.80La0.20TiO3 (PLZT), and Sr0.5Ba0.5TiO3 were deposited on quartz substrates and thin Bi4Ti3O12 buffer layers were explored as a chemical barrier and to improve crystallographic texturing. The morphology of thick films (˜3 µm) of PLZT was not acceptable for optical applications, whereas the Sr0.5Ba0.5TiO3 films were very smooth, but had some cracking. The Sr0.5Ba0.5TiO3 films were optically determined to be uniform and of sufficient quality for use in fabricating in-line fiber optic modulators.

Pulsed laser deposition of oriented V2O5 thin films

2000 ◽  
Vol 15 (10) ◽  
pp. 2249-2265 ◽  
Author(s):  
Jeanne M. McGraw ◽  
John D. Perkins ◽  
Falah Hasoon ◽  
Philip A. Parilla ◽  
Chollada Warmsingh ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Glass Substrates ◽  
Wide Range ◽  
Phase Pure ◽  
Amorphous Quartz ◽  
Quartz Substrates

We have found that by varying only the substrate temperature and oxygen pressure five different crystallographic orientations of V2O5 thin films can be grown, ranging from amorphous to highly textured crystalline. Dense, phase-pure V2O5 thin films were grown on SnO2/glass substrates and amorphous quartz substrates by pulsed laser deposition over a wide range of temperatures and oxygen pressures. The films' microstructure, crystallinity, and texturing were characterized by electron microscopy, x-ray diffraction, and Raman spectroscopy. Temperature and oxygen pressure appeared to play more significant roles in the resulting crystallographic texture than did the choice of substrate. A growth map summarizes the results and delineates the temperature and O2 pressure window for growing dense, uniform, phase-pure V2O5 films.

Epitaxial Growth of Ferroelectric Thin Films on GaAs with MgO Buffer Layers by Pulsed Laser Deposition

1991 ◽  
Vol 243 ◽  
Author(s):  
K. Nashimoto ◽  
D. K. Fork ◽  
F. A. Ponce ◽  
T. H. Geballe
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Hrtem Observation ◽  
Device Applications ◽  
Ferroelectric Hysteresis

AbstractEpitaxial growth of ferroelectric thin films on GaAs (100) by pulsed laser deposition was examined for integrated electro-optic device applications. To promote epitaxy of ferroelectrics and prevent interdiffusion, we have deposited several types of buffer layers. CeO2 reacted strongly with GaAs. Although Y203 9% stabilized-ZrO2 films showed epitaxial growth, YSZ reacted with GaAs at 780°C. MgO grew epitaxially and was stable even at 780°C. HRTEM observation showed a sharp interface between MgO and GaAs. BaTiO3 and SrTiO3 deposited on MgO/GaAs structures showed epitaxial growth. In-plane orientation was BaTiO3 [100 // MgO [100] // GaAs [100]. Epitaxial BaTiO3 films were c-axis oriented tetragonal phase and showed ferroelectric hysteresis.

Highly Conductive and Optically Transparent Polycrystalline Iridium Oxide Thin Films Grown by Reactive Pulsed Laser Deposition

1997 ◽  
Vol 472 ◽  
Author(s):  
M.A. El Khakani ◽  
M. Chaker
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Optical Transmission ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Structure Morphology ◽  
Quartz Substrates

ABSTRACTReactive pulsed laser deposition has been used to deposit IrO2 thin films on both SiO2 and fused quartz substrates, by ablating a metal iridium target in oxygen atmosphere. At a KrF laser intensity of about 1.7 × 109 W/cm2, IrO2 films were deposited at substrate deposition temperatures ranging from room-temperature to 700 °C under an optimum oxygen ambient pressure of 200 mTorr. The structure, morphology, electrical resistivity and optical transmission of the deposited films were characterized as a function of their deposition temperature (Td). High quality IrO2 films are obtained in the 400–600 °C deposition temperature range. They are polycrystalline with preferred orientations, depending on the substrate, and show a dense granular morphology. At a Td as low as 400 °C, highly conductive IrO2 films with room-temperature resistivities as low as (42±6) μΩ cm are obtained. Over the 300–600 °C Td range, the IrO2 films were found to exhibit a maximum optical transmission at 450 °C (∼ 45 % at 500 nm for 80 nm-thick films).

Effect of buffer layers on the property of Pb(Zr,Ti)O3–Pb(Mn,W,Sb,Nb)O3 thin films grown by pulsed laser deposition

2006 ◽  
Vol 252 (13) ◽  
pp. 4545-4548
Author(s):  
Hyun Woo Chung ◽  
Eun Sun Lee ◽  
Dong Hua Li ◽  
Byung Du Ahn ◽  
Sang Yeol Lee
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Buffer Layers ◽  
Laser Deposition

Superconducting properties of YBCO thin films grown on [001] quartz substrates by pulsed laser deposition

2019 ◽  
Vol 562 ◽  
pp. 20-24 ◽  
Author(s):  
N.V. Porokhov ◽  
E.E. Levin ◽  
M.L. Chukharkin ◽  
A.S. Kalaboukhov ◽  
A.G. Maresov ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Superconducting Properties ◽  
Ybco Thin Films ◽  
Quartz Substrates
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