Afm Study of Surface Morphology of High Dose Co Implanted Si with A Mevva Ion Source

1995 ◽  
Vol 396 ◽  
Author(s):  
Qicai Peng ◽  
S.P. Wong ◽  
J.B. Xu ◽  
I.H. Wilson
Keyword(s):  
Surface Morphology ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
Root Mean Square Roughness ◽  
High Dose ◽  
Abrupt Increase ◽  
Force Microscopy ◽  
Atomic Force ◽  
Substrate Temperatures

AbstractThe surface morphology of high dose Co implanted Si has been studied by atomic force microscopy. The Co implantation was performed using a metal vapor vacuum arc (MEVVA) ion source at an extraction voltage of 60 or 70 kV to a dose of 2×l017 or 4×l017 ions cm-2 at substrate temperatures Ts ranging from 210°C to 700°C. When Ts is less than about 600°C, the surface morphology of the implanted samples shows largely similar features of densely distributed narrow asperities. However, for the sample with Ts of 700°C, the surface morphology is significantly different and shows hillocks of much larger size. It is also found that when other parameters are fixed, for Ts less than about 600°C, the root-mean-square roughness Rrms increases exponentially with 7^, from the subnanometer scale to several nanometers. But for the sample with Ts of 700°C, there is an abrupt increase in Rrms to 35 nm. The variation of the surface morphology with other parameters is also discussed.

scholarly journals Formation of Buried Epitaxial Si-Ge Alloy Layers in Si Crystal by High Dose Ge ION Implantation

1991 ◽  
Vol 235 ◽  
Author(s):  
Kin Man Yu ◽  
Ian G. Brown ◽  
Seongil Im
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Lattice Mismatch ◽  
Solid Phase ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Ion Channeling

ABSTRACTWe have synthesized single crystal Si1−xGex alloy layers in Si <100> crystals by high dose Ge ion implantation and solid phase epitaxy. The implantation was performed using the metal vapor vacuum arc (Mevva) ion source. Ge ions at mean energies of 70 and 100 keV and with doses ranging from 1×1016 to to 7×1016 ions/cm2 were implanted into Si <100> crystals at room temperature, resulting in the formation of Si1−xGex alloy layers with peak Ge concentrations of 4 to 13 atomic %. Epitaxial regrowth of the amorphous layers was initiated by thermal annealing at temperatures higher than 500°C. The solid phase epitaxy process, the crystal quality, microstructures, interface morphology and defect structures were characterized by ion channeling and transmission electron microscopy. Compositionally graded single crystal Si1−xGex layers with full width at half maximum ∼100nm were formed under a ∼30nm Si layer after annealing at 600°C for 15 min. A high density of defects was found in the layers as well as in the substrate Si just below the original amorphous/crystalline interface. The concentration of these defects was significantly reduced after annealing at 900°C. The kinetics of the regrowth process, the crystalline quality of the alloy layers, the annealing characteristics of the defects, and the strains due to the lattice mismatch between the alloy and the substrate are discussed.

Solid Phase Epitaxy of Implanted Si-Ge-C Alloys

1995 ◽  
Vol 388 ◽  
Author(s):  
Xiang Lu ◽  
Nathan W. Cheung
Keyword(s):  
Lattice Mismatch ◽  
Solid Phase ◽  
Metal Vapor ◽  
High Dose Rate ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Rutherford Back Scattering

AbstractSi1-x-yGexCy/Si heterostuctures were formed on Si (100) surface by Ge and C implantation with a high dose rate MEtal - Vapor Vacuum arc (MEVVA) ion source and subsequent Solid Phase Epitaxy (SPE). after thermal annealing in the temperature range from 600 °C to 1200 °C, the implanted layer was studied using Rutherford Back-scattering Spectrometry (RBS), cross-sectional High Resolution Transmission Electron Microscopy (HRTEM) and fourbounce X-ray Diffraction (XRD) measurement. Due to the small lattice constant and wide bandgap of SiC, the incorporation of C into Si-Ge can provide a complementary material to Si-Ge for bandgap engineering of Si-based heterojunction structure. Polycrystals are formed at temperature at and below 1000 °C thermal growth, while single crystal epitaxial layer is formed at 1100 °C and beyond. XRD measurements near Si (004) peak confirm the compensation of the Si1-x Gex lattice mismatch strain by substitutional C. C implantation is also found to suppress the End of Range (EOR) defect growth.

SURFACE MORPHOLOGY AND PHOTOLUMINESCENCE CHARACTERISTICS OF Sm-DOPED YVO4 THIN FILMS

2007 ◽  
Vol 14 (05) ◽  
pp. 873-878 ◽  
Author(s):  
HYUN KYOUNG YANG ◽  
JONG WON CHUNG ◽  
BYUNG KEE MOON ◽  
BYUNG CHUN CHOI ◽  
JUNG HYUN JUNG ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Photoluminescence Intensity ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Zircon Structure ◽  
Substrate Temperatures

Surface morphology and crystallinity of YVO 4: Sm 3+ thin films have an influence on the photoluminescence characteristics. The YVO 4: Sm 3+ films have been deposited on Al 2 O 3 (0001) substrates using pulsed laser deposition method. The films were grown at the various substrate temperatures changing from 500 to 700°C. The crystallinity and surface morphology of the films were investigated using X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. The results of XRD showed that YVO 4: Sm 3+ films had a zircon structure and AFM study revealed that the films consisted of homogeneous grains ranging from 100 to 400 nm depending on the deposition conditions. The photoluminescence spectra were measured at room temperature and the emitted radiation was dominated by the red emission peak at 620 nm radiated from the transition of 5 D 0-7 F 2. The crystallinity, surface morphology, and photoluminescence spectra of thin-film phosphors were highly dependent on the substrate temperature. The surface roughness and photoluminescence intensity of the films showed similar behavior as a function of substrate temperature.

Synthesis of Continuous SmSi2 Layers on Si by Samarium Ion Implantation Using A Metal Vapor Vacuum Arc Ion Source

2000 ◽  
Vol 647 ◽  
Author(s):  
X.Q. Cheng ◽  
H.N. Zhu ◽  
B.X. Liu
Keyword(s):  
Surface Morphology ◽  
Ion Implantation ◽  
Ion Beam ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
Experimental Conditions ◽  
Post Annealing ◽  
Beam Heating ◽  
Fine Crystalline Structure

AbstractSamarium ion implantation was conducted to synthesize Sm-disilicide films on silicon wafers, using a metal vapor vacuum arc ion source and the continuous SmSi2 films were directly obtained with neither external heating during implantation nor post-annealing. Diffraction and surface morphology analysis confirmed the formed Sm-disilicilde films were of a fine crystalline structure under appropriate experimental conditions. Besides, the formation mechanism of the SmSi2phase is also discussed in terms of the temperature rise caused by ion beam heating and the effect of ion dose on the properties of the SmSi2films.

Field Emission Properties of Ion Beam Synthesized SiC/Si Heterostructures by MEVVA Implantation

1998 ◽  
Vol 509 ◽  
Author(s):  
Dihu Chen ◽  
S. P. Wong ◽  
W.Y. Cheung ◽  
E.Z. Luo ◽  
W. Wu ◽  
...  
Keyword(s):  
Field Emission ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Two Factors

AbstractPlanar SiC/Si heterostructures were formed by high dose carbon implantation using a metal vapor vacuum arc ion source. The variations of the field emission properties with the implant dose and annealing conditions were studied. A remarkably low turn-on field of IV/μm was observed from a sample implanted at 35 keV to a dose of 1.0×1018 cm−2 with subsequent annealing in nitrogen at 1200°C for 2h. The chemical composition depth profiles were determined from x-ray photoelectron spectroscopy and the surface morphology was observed by atomic force microscopy. The formation of a thin surface stoichiometric SiC layer and the formation of densely distributed small protrusions on the surface are believed to be the two factors responsible for the efficient electron field emission.

Gmr Effect and Properties of CoAg Granular Films Formed by Implantation with a Metal Vapor Vacuum Arc Ion Source

1999 ◽  
Vol 577 ◽  
Author(s):  
S.P. Wong ◽  
M.F. Chiah ◽  
W.Y. Cheung ◽  
N. Ke ◽  
J.B. Xu ◽  
...  
Keyword(s):  
Temperature Variation ◽  
Giant Magnetoresistance ◽  
Rutherford Backscattering Spectrometry ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
Granular Films ◽  
Force Microscopy ◽  
Domain Structures ◽  
Sputter Deposited

ABSTRACTCobalt-silver granular thin films were formed by Co implantation into Ag using a metal vapor vacuum arc (MEVVA) ion source. The magnetic field dependence and the temperature variation of the giant magnetoresistance (GMR) effect and their relation with the processing conditions were studied and discussed in conjunction with results of Rutherford backscattering spectrometry, atomic force microscopy, magnetic force microscopy (MFM), and SQUID measurements. Anomalous temperature dependence of the coercive field Hc in the perpendicular-to-film direction determined from GMR measurements was observed for some samples. For one sample, Hc shows a maximum value at around 240K and decreases with decreasing temperature from 240K to 20K. The temperature variation of the magnetization M of this sample exhibits a minimum. The maximum in the Hc-T curve corresponds well with the minimum in the M-T curve. The M-T curve suggests that there is more than one magnetic phase present in this sample. The domain structures of the implanted granular films as revealed by MFM images exhibit very different features compared with those of sputter deposited CoAg granular films.

scholarly journals Deposition and Characterization of Molybdenum Thin Film Using Direct Current Magnetron and Atomic Force Microscopy

2017 ◽  
Vol 2017 ◽  
pp. 1-10 ◽  
Author(s):  
Muhtade Mustafa Aqil ◽  
Mohd Asyadi Azam ◽  
Mohd Faizal Aziz ◽  
Rhonira Latif
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Root Mean Square Roughness ◽  
Deposition Condition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Thin Film Layer ◽  
Film Layer ◽  
Grain Distribution

In this paper, pure molybdenum (Mo) thin film has been deposited on blank Si substrate by DC magnetron sputtering technique. The deposition condition for all samples has not been changed except for the deposition time in order to study the influence of time on the thickness and surface morphology of molybdenum thin film. The surface profiler has been used to measure the surface thickness. Atomic force microscopy technique was employed to investigate the roughness and grain structure of Mo thin film. The thickness and grain of molybdenum thin film layer has been found to increase with respect to time, while the surface roughness decreases. The average roughness, root mean square roughness, surface skewness, and surface kurtosis parameters are used to analyze the surface morphology of Mo thin film. Smooth surface has been observed. From grain analysis, a uniform grain distribution along the surface has been found. The obtained results allowed us to decide the optimal time to deposit molybdenum thin film layer of 20–100 nm thickness and subsequently patterned as electrodes (source/drain) in carbon nanotube-channel transistor.

Effects of Beam Current Density on Ion Beam Synthesis OF SiC

2001 ◽  
Vol 680 ◽  
Author(s):  
D.H. Chen ◽  
S.P. Wong ◽  
J.K.N. Lindner
Keyword(s):  
Current Density ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Metal Vapor ◽  
Beam Current ◽  
Ion Source ◽  
Vacuum Arc ◽  
Beam Current Density ◽  
Carbon Clusters ◽  
High Dose

ABSTRACTThin SiC layers were synthesized by high dose C implantation into silicon using a metal vapor vacuum arc ion source at various conditions. Characterization of the ion beam synthesized SiC layers was performed using various techniques including x-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) absorption, and Raman spectroscopy. The XPS results showed that for samples with over-stoichiometric implant doses, if the implant beam current density was not high enough, even after prolonged thermal annealing at high temperatures, the as-implanted gaussian-like carbon depth profile remained unchanged. However, if the implant beam current density was sufficiently high, there was significant carbon redistribution during annealing, so that a thicker stoichiometric SiC layer can be formed after annealing. The XPS and Raman results also showed that there were carbon clusters formed in the as-implanted layers for the low beam current density implanted samples, while the formation of such carbon clusters was minimal in the high beam current density as-implanted samples. The effect of beam current density on the fraction of different bonding states of the implanted carbon atoms was studied.

Formation of Buried Iridium Silicide Layer in Silicon by High Dose Iridium Ion Implantation

1989 ◽  
Vol 147 ◽  
Author(s):  
K. M. Yu ◽  
B. Katz ◽  
I. C. Wu ◽  
I. G. Brown
Keyword(s):  
Ion Implantation ◽  
Metal Ion ◽  
Room Temperature ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
High Current ◽  
Interface Morphology ◽  
Silicide Layer

AbstractWe have investigated the formation of IrSi3 layers buried in <111> silicon. The layers are formed by iridium ion implantation using a metal vapor vacuum arc (MEVVA) high current metal ion source at room temperature with average beam energy = 130 keV. Doses of the Ir ions ranging from 2×1016 to 1.5×1017/cm2 were implanted into <111> Si. The formation of IrSi3 phase is realized after annealing at temperatures as low as 500°C. A continuous IrSi3 layer of =200 Å thick buried under =400 Å Si was achieved with samples implanted with doses not less than 3.5×1016/cm2. Implantated doses above 8×1016/cm2 resulted in the formation of an IrSi3 layer on the surface due to excessive sputtering of Si by the TI ions. The effects of implant dose on phase formation, interface morphology and implanted atom redistribution are discussed. Radiation damage and regrowth of Si due to the implantation process was also studied.

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