Electroreflectance from Gallium Nitride Using Second-Harmonic Generation

1995 ◽  
Vol 395 ◽  
Author(s):  
Joseph Miragliotta ◽  
Dennis K. Wickenden

ABSTRACTThe optical second-harmonic (SH) response of a reverse biased gallium nitride (GaN) film was investigated for SH photon energies near the fundamental absorption edge. With the application of a DC electric field (∼ 100 to 220 kV/cm) along the optical axis of the sample, a strong two-photon resonance was observed in the specular reflected SH signal. This resonance was attributed to electric-field induced SH generation, EFISH, a third-order nonlinear response which arises from an induced polarization that is linearly dependent on the amplitude of the DC field. The EFISH contribution was spectrally localized at the bandedge, demonstrating the potential of SH spectroscopy for analysis of critical points in the band structure of semiconductors.

1995 ◽  
Vol 336 (1-2) ◽  
pp. 225-231 ◽  
Author(s):  
O.A. Aktsipetrov ◽  
A.V. Melnikov ◽  
T.V. Murzina ◽  
A.A. Nikulin ◽  
A.N. Rubtsov

1980 ◽  
Vol 10 (3) ◽  
pp. 270-275 ◽  
Author(s):  
V V Berezovskiĭ ◽  
A V Lebedev ◽  
A I Maĭmistov ◽  
Z A Manykin

2012 ◽  
Vol 584 ◽  
pp. 88-91
Author(s):  
N.K. Siji Narendran ◽  
K.R. Reshma ◽  
P. Sudheesh ◽  
K. Chandrasekharan

We report the effect of electric field on third order nonlinear optical properties of Hydrazone (Hz) doped Polymethyl methacrylate (PMMA) films. The films were prepared by solution casting method. Poling of films was done by corona discharge. Single beam Z-scan technique with 7ns Nd: YAG laser pulses at 532nm were employed for the measurements. Third order susceptibility of films was measured with an emphasis on the applied electric field. We also demonstrated the second harmonic generation in the corona poled films.


Author(s):  
HARI SINGH NALWA ◽  
SETSUO KOBAYASHI

Third-order non-linear optical susceptibilities of silicon, germanium, tin, aluminum, manganese and vanadium naphthalocyanine derivatives measured by third-harmonic generation technique from 1.05 μm to 2.1 μm are reported. Our results show the dependence of χ(3)(–3ω;ω,ω,ω) values on the variation of the central metal atom associated to different metal-ligand charge-transfer interactions. Silicon naphthalocyanines ( SiNc ) showed the χ(3)(–3ω;ω,ω,ω) values on the order of 10−10 esu at 1.5 μm, this does not appear to be due to a three-photon resonance, instead the increase in χ(3) could be the two-photon resonance lying just above the one-photon state. Degenerate four-wave mixing measurements on thin films of a SiNc derivative yielded the χ(3)(–3ω;ω,ω,ω) value as high as 5.0 × 10−7 esu at 800 nm, enhanced by one-photon resonance near the Q-band peak region. The figure of merit χ(3)/α at 800 nm is quite large corresponding to 4.2 × 10−12 esu cm. Effect of the metal atoms and plausible resonance contribution accounting for large third-order optical non-linearity of naphthalocyanines are discussed.


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