Emissivity of Rough Silicon Surfaces: Measurement and Calculations

1995 ◽  
Vol 389 ◽  
Author(s):  
H. Xu ◽  
J.C. Sturm

ABSTRACTThe directional reflectance and approximate emissivity of rough silicon wafers were measured by reflection measurements using a single point detector and a broad area illumination source. Experiments were also performed to determine the cone angle of the incident light required to properly measure the emissivity of rough backsides. Based on surface roughness parameters acquired with an Atomic Force Microscope, reflectance calculations were performed within the framework of the Beckmann-Spizzichino model. The results are qualitatively consistent with experimental observations.

1995 ◽  
Vol 387 ◽  
Author(s):  
H. Xu ◽  
J. C. Sturm

AbstractThe directional reflectance and approximate emissivity of rough silicon wafers were measured by reflection measurements using a single point detector and a broad area illumination source. Experiments were also performed to determine the cone angle of the incident light required to properly measure the emissivity of rough backsides. Based on surface roughness parameters acquired with an Atomic Force Microscope, reflectance calculations were performed within the framework of the Beckmann-Spizzichino model. The results are qualitatively consistent with experimental observations.


Molecules ◽  
2021 ◽  
Vol 26 (4) ◽  
pp. 900
Author(s):  
Maria Vardaki ◽  
Aida Pantazi ◽  
Ioana Demetrescu ◽  
Marius Enachescu

In this work we present the results of a functional properties assessment via Atomic Force Microscopy (AFM)-based surface morphology, surface roughness, nano-scratch tests and adhesion force maps of TiZr-based nanotubular structures. The nanostructures have been electrochemically prepared in a glycerin + 15 vol.% H2O + 0.2 M NH4F electrolyte. The AFM topography images confirmed the successful preparation of the nanotubular coatings. The Root Mean Square (RMS) and average (Ra) roughness parameters increased after anodizing, while the mean adhesion force value decreased. The prepared nanocoatings exhibited a smaller mean scratch hardness value compared to the un-coated TiZr. However, the mean hardness (H) values of the coatings highlight their potential in having reliable mechanical resistances, which along with the significant increase of the surface roughness parameters, which could help in improving the osseointegration, and also with the important decrease of the mean adhesion force, which could lead to a reduction in bacterial adhesion, are providing the nanostructures with a great potential to be used as a better alternative for Ti implants in dentistry.


2004 ◽  
Vol 11 (03) ◽  
pp. 265-269
Author(s):  
O. P. SINHA ◽  
P. C. SRIVASTAVA ◽  
V. GANESAN

The p-silicon surfaces have been irradiated with ~ 100 MeV Si 7+ions to a fluence of 2.2×1013 ions cm -2, and surface morphology has been studied with atomic force microscopy (AFM). Interesting features of cracks of ~ 47 nm in depth and ~ 103 nm in width on the irradiated surfaces have been observed. The observed features seemed to have been caused by the irradiation-induced stress in the irradiated regions of the target surface.


2012 ◽  
Vol 730-732 ◽  
pp. 257-262
Author(s):  
Bruno Nunes ◽  
Sergio Magalhães ◽  
Nuno Franco ◽  
Eduardo Alves ◽  
Ana Paula Serro ◽  
...  

Aiming to improve the nanotribological response of Si-based materials we implanted silicon wafers with different fluences of iron ions (up to 2x1017 cm-2). Implantation was followed by annealing treatments at temperatures from 550°C to 1000°C. The implanted surfaces were analyzed by scanning electron microscopy (SEM), X-ray diffraction (XRD), atomic force microscopy (AFM) and wettability tests. Then, samples were submitted to AFM-based nanowear tests. We observe an increase of both hidrophobicity and and wear resistance of the implanted silicon, indicating that ion implantation of Si can be a route to be deeper explored in what concerns tribomechanical improvement of Si.


2018 ◽  
Vol 8 (12) ◽  
pp. 2693 ◽  
Author(s):  
Philippe Massicotte ◽  
Guislain Bécu ◽  
Simon Lambert-Girard ◽  
Edouard Leymarie ◽  
Marcel Babin

The vertical diffuse attenuation coefficient for downward plane irradiance ( K d ) is an apparent optical property commonly used in primary production models to propagate incident solar radiation in the water column. In open water, estimating K d is relatively straightforward when a vertical profile of measurements of downward irradiance, E d , is available. In the Arctic, the ice pack is characterized by a complex mosaic composed of sea ice with snow, ridges, melt ponds, and leads. Due to the resulting spatially heterogeneous light field in the top meters of the water column, it is difficult to measure at single-point locations meaningful K d values that allow predicting average irradiance at any depth. The main objective of this work is to propose a new method to estimate average irradiance over large spatially heterogeneous area as it would be seen by drifting phytoplankton. Using both in situ data and 3D Monte Carlo numerical simulations of radiative transfer, we show that (1) the large-area average vertical profile of downward irradiance, E d ¯ ( z ) , under heterogeneous sea ice cover can be represented by a single-term exponential function and (2) the vertical attenuation coefficient for upward radiance ( K L u ), which is up to two times less influenced by a heterogeneous incident light field than K d in the vicinity of a melt pond, can be used as a proxy to estimate E d ¯ ( z ) in the water column.


2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
Christian Girginov ◽  
Stephan Kozhukharov

Breakdown phenomena are investigated at continuous isothermal (20∘C) and galvanostatic (0.2–5 mA cm−2) anodizing of aluminum in ammonium salicylate in dimethylformamide (1 M AS/DMF) electrolyte. From the kinetic -curves, the breakdown voltage () values are estimated, as well as the frequency and amplitude of oscillations of formation voltage () at different current densities. The surface of the aluminum specimens was studied using atomic force microscopy (AFM). Data on topography and surface roughness parameters of the electrode after electric breakdowns are obtained as a function of anodization time. The electrode surface of anodic films, formed with different current densities until the same charge density has passed (2.5 C cm−2), was assessed. Results are discussed on the basis of perceptions of avalanche mechanism of the breakdown phenomena, due to the injection of electrons and their multiplication in the volume of the film.


2015 ◽  
Vol 233-234 ◽  
pp. 678-681
Author(s):  
T.B. Kosykh ◽  
A.S. Prosyakov ◽  
A.P. Pyatakov ◽  
Alexander N. Shaposhnikov ◽  
Anatoly R. Prokopov ◽  
...  

Surface properties of nanoscale iron garnet films of different compositions prepared by reactive ion beam sputtering were examined by means of scanning probe microscopy. Atomic force microscope images of the film surfaces are represented for the films of different compositions and deposition times. The article presents the dependences of the roughness parameters on the film composition and thickness and on the energy of Ar+ ions by which the substrates were pre-treated. It was shown that the roughness parameters of the films' surface increase with the increase of Ar+ ions energy and the films' thickness.


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