Observation of the Early Stages of B-Axis Oriented Prba2Cu3O7-x Thin Film Growth by AFM

1995 ◽  
Vol 388 ◽  
Author(s):  
Gun Yong Sung ◽  
Jeong Dae Suh ◽  
Sang-Don Jung
Keyword(s):  
Surface Roughness ◽  
Film Growth ◽  
Thin Film Growth ◽  
Laser Deposition ◽  
Growth Mode ◽  
Layer By Layer ◽  
Oriented Growth ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Conditions

AbstractThe initial stages of the growth of b-axis oriented PrBa2Cu3O7-x (PBCO) films on LaSrGaO4 (100) substrates were investigated by atomic force microscopy to follow the growth of the thin films. Series of films with thickness ranging between 0.34 nm and 100 nm were prepared under identical pulsed laser deposition conditions. No sprial-topped or flat-topped islands were observed and the scale of the surface roughness was lower than that of the c-axis oriented growth mode. the 300 nm-thick in-plane aligned a-axis oriented YBCO films have the root mean square (RMS) surface roughness of 2 nm. It is considered that the b-axis oriented PBCO films on LaSrGaO4 (100) substrates were nucleated and grown by layer-by-layer like growth mode.

Surfactant-Mediated Epitaxial Growth of Metallic Thin Films

2010 ◽  
Vol 117 ◽  
pp. 55-61
Author(s):  
Masao Kamiko ◽  
Ryoichi Yamamoto
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Film Growth ◽  
Thin Film Growth ◽  
Growth Mode ◽  
Metallic Thin Films ◽  
Layer By Layer ◽  
Metallic Films ◽  
Heteroepitaxial Growth

The effects of several surfactants on the homoepitaxial and heteroepitaxial growth of metallic films and multilayers have been studied and compared. Our measurements clearly revealed that pre-deposition of a small amount of surfactant prior to the adatom deposition changed thin film growth mode and structure. The pre-deposited surfactant enhanced layer-by-layer (LBL) growth of the homoepitaxial and heteroepitaxial growth of metallic films. The surfactant also enhanced the epitaxial growth of metallic multilayer.

Pulsed Laser Deposition of Superconductor/Ferromagnetic YBa2Cu3Oy/SrTiO3/La2/3Sr1/3MnO3 Heterostructures

1999 ◽  
Vol 574 ◽  
Author(s):  
V. Trtík ◽  
F. Sánchez ◽  
C. Ferrater ◽  
M. Varela ◽  
L. Fábrega ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Complete Analysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Strip Geometry ◽  
Droplet Density ◽  
Scanning Electron ◽  
Deposition Conditions

AbstractYBa2Cu3Oy/SrTiO3/La2/3Sr1/3MnO3 heterostructures have been deposited on LaAlO3(001) and SrTiO3(001) substrates by pulsed laser deposition. First, the influence of deposition conditions on crystallinity and morphology of single LSMO films was examined. Results were used for preparation of heterostructures in tri-layer and cross-strip geometry. Cross-strip geometry was defined by direct shadow mask patterning. Different characterization techniques have been used to determine and correlate the heterostructure properties. A complete analysis of the crystal structure has been carried out with a four-circle difractometer. Morphology has been studied by scanning electron microscopy and atomic force microscopy in order to determine surface roughness and droplet density. Basic electrical properties of films have been determined.

Adsorption-Controlled Growth of Ferroelectric PbTiO, and Bi4Ti3O12 Films for Nonvolatile Memory Applications by MBE

1997 ◽  
Vol 474 ◽  
Author(s):  
C. D. Theis ◽  
J. Yeh ◽  
M. E. Hawley ◽  
G. W. Brown ◽  
D. G. Schlom
Keyword(s):  
Nonvolatile Memory ◽  
Film Growth ◽  
Epitaxial Films ◽  
Layer By Layer ◽  
Force Microscopy ◽  
Lattice Constants ◽  
Atomic Force ◽  
Phase Pure ◽  
Memory Applications ◽  
Spiral Type

ABSTRACTEpitaxial PbTiO3 and Bi4Ti3O12 thin films have been grown on (100) SrTiO3 and (100) LaAlO3 substrates by reactive molecular beam epitaxy (MBE). Titanium is supplied to the film in the form of shuttered bursts each containing a one monolayer dose of titanium atoms for the growth of PbTi03 and three monolayers for the growth of Bi4Ti3O12. Lead, bismuth, and ozone are continuously supplied to the surface of the depositing film. Growth of phase pure, c-axis oriented epitaxial films with bulk lattice constants is achieved using an overpressure of these volatile species. With the proper choice of substrate temperature (600 – 650 °C) and ozone background pressure (PO3 = 2×10−5 Torr), the excess of the volatile metals and ozone desorb from the surface of the depositing film leaving a phase-pure stoichiometric crystal. The smooth PbTiO3 surface morphology revealed by atomic force microscopy (AFM) suggests that the PbTiO3 films grow in a layer-by-layer fashion. In contrast the Bi4Ti3O12 films contain islands which evolve either continuously or around screw dislocations via a spiral-type growth mechanism.

Structural, morphology and electrical properties of layered copper selenide thin film

Open Physics ◽  
2009 ◽  
Vol 7 (2) ◽  
Author(s):  
J. Ying Chyi Liew ◽  
Zainal Talib ◽  
W. Mahmood ◽  
M. Yunus ◽  
Zulkarnain Zainal ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Surface Roughness ◽  
Grain Size ◽  
Copper Selenide ◽  
Layer By Layer ◽  
Structural Morphology ◽  
Force Microscopy ◽  
Atomic Force ◽  
Average Grain Size ◽  
Evaporation Technique

AbstractThin films of copper selenide (CuSe) were physically deposited layer-by-layer up to 5 layers using thermal evaporation technique onto a glass substrate. Various film properties, including the thickness, structure, morphology, surface roughness, average grain size and electrical conductivity are studied and discussed. These properties are characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), ellipsometer and 4 point probe at room temperature. The dependence of electrical conductivity, surface roughness, and average grain size on number of layers deposited is discussed.

Correlation of Roughness, Impurity, Infra-Red Emissivity and Sputter Conditions for Aluminium Films

1994 ◽  
Vol 354 ◽  
Author(s):  
C.H. Wang ◽  
W.C. Shih ◽  
R.E. Somekh ◽  
J.E. Evetts ◽  
D. Jackson
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Film Thickness ◽  
Impurity Level ◽  
General Context ◽  
Force Microscopy ◽  
Atomic Force ◽  
Preliminary Work ◽  
Infra Red ◽  
Deposition Conditions

AbstractWe report the results of a study of IR emissivity of aluminium films as a function of impurity level, film thickness and sputtering conditions. Preliminary work suggests that for a given level of film impurities and deposition conditions, the JJR emissivity can be minimized with a certain film thickness. The influence of impurity level, film thickness, and sputter pressure on IR emissivity has been correlated with the resistivity and the surface roughness (measured by atomic force microscopy). The results are discussed in the general context of the Drude theory with allowances for the observed roughness.

High Performance N-type Organic Thin-Film Transistors with Inert Contact Metals

2009 ◽  
Vol 1154 ◽  
Author(s):  
Sarah Schols ◽  
Lucas Van Willigenburg ◽  
Robert Müller ◽  
Dieter Bode ◽  
Maarten Debucquoy ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Film Growth ◽  
High Vacuum ◽  
Thin Film Growth ◽  
Organic Thin Film ◽  
Deposition Fluxes ◽  
Force Microscopy ◽  
Atomic Force ◽  
Substrate Temperatures

AbstractThin film growth by high vacuum evaporation of the n-type organic semiconductor 5, 5″′-diperfluorohexylcarbonyl-2,2′:5′,2″:5″,2″′-quaterthiophene (DFHCO-4T) on poly-(α-methylstyrene)-coated n++-Si/SiO2 substrates is investigated at various deposition fluxes and substrate temperatures. Film characterization by atomic force microscopy reveals typical Stransky-Krastanov growth. Transistors with Au source-drain top contacts and optimized DFHCO-4T deposition conditions attain an apparent saturation mobility of 4.6 cm2/Vs, whereas this parameter is 100× lower for similar transistors with LiF/Al top contacts. We explain this lower performance by the formation of a thin interfacial layer with poor injection properties resulting from a redox reaction between Al and DFHCO-4T.

Surface Roughness of Silicon-Nitride Gate Insulators Deposited in a 40-MHZ Glow Discharge

1996 ◽  
Vol 424 ◽  
Author(s):  
H. Meiling ◽  
E. Ten Grotenhuis ◽  
W. F. van der Weg ◽  
J. J. Hautala ◽  
J. F. M. Westendorp
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Silicon Nitride ◽  
Gas Composition ◽  
Rf Power ◽  
Bulk Properties ◽  
Force Microscopy ◽  
Hydrogen Dilution ◽  
Atomic Force ◽  
Deposition Conditions

AbstractThe surface morphology of 40-MHz PECVD SiNx films is investigated. We report on the correlation between the deposition conditions, bulk properties, and surface roughness of these TFT insulators. The roughness is measured with atomic-force microscopy, AFM. A link will be presented between the AFM properties and the effects of hydrogen dilution during deposition: gas composition and rf-power-density (P) dependences will be discussed. An increase of the surface roughness to 3.7 nm is observed upon H2 dilution and P increase, ascribed to enhanced ion bombardment of the surface during growth.

Afm Study of CeO2 Growth on Sapphire as a Buffer Layer for YBa2Cu3O7

1995 ◽  
Vol 401 ◽  
Author(s):  
M. W. Denhoff ◽  
B. F. Mason ◽  
H. T. Tran ◽  
P. D. Grant
Keyword(s):  
Ybco Film ◽  
Three Dimensional ◽  
Layer Growth ◽  
Granular Structure ◽  
Atomic Scale ◽  
Laser Deposition ◽  
Layer By Layer ◽  
Temperature Dependent ◽  
Force Microscopy ◽  
Atomic Force

AbstractThe structure of CeO2 films grown on (1102) sapphire and on YBCO thin films was investigated. The films reported on here were grown by pulsed excimer laser deposition and their surface structure was probed using atomic force microscopy. We found that CeO2 films grown on sapphire were epitaxial with a granular structure which is smooth on an atomic scale. We see evidence of a surface reconstruction on a very smooth CeO2 (100) oriented surface. At higher growth temperatures, three dimensional islands begin to form. When a CeO2 film is grown on top of a YBCO film, the growth mode is two dimensional. The steps in this layer by layer growth are a surprisingly large 2 nm. This is about equal to 4 times the CeO2 lattice constant. This step height appears to be temperature dependent.

scholarly journals Layer-by-Layer Films from Wine: An Investigation of an Exponential Growth Process

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Marcio N. Gomes ◽  
Jackeline B. Brito ◽  
Josmary R. Silva ◽  
Nara C. de Souza
Keyword(s):  
Exponential Growth ◽  
Deposition Time ◽  
Linear Growth ◽  
Film Growth ◽  
Layer By Layer ◽  
Constant Amount ◽  
Force Microscopy ◽  
Growth Regime ◽  
Atomic Force ◽  
Microscopy Images

We report on the preparation and study of layer-by-layer films of wine alternated with bovine serum albumin (BSA). We found that the exponential and/or linear growth of the films is dependent on the deposition time. Atomic force microscopy images were analysed using scale laws and the fractal dimension, and the results suggested that the BSA/wine film growth regime is determined by sub-bilayer or bilayer growth. Exponential growth was associated with a sub-bilayer deposition regime, whereas linear growth was associated with a bilayer deposition in which a constant amount of material is deposited.

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