Low Temperature (≥ 400°C) Silicon Pyrometry AT 1.1μm with Emissivity Correction
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AbstractIn this work we have examined the experimental low-temperature limits of 1.1μm pyrometry for the measurement of the temperature of silicon wafers and aluminumcoated silicon wafers at temperatures under 700°C in RTP chambers. In-situ emissivity correction in the same range has also been demonstrated with a single detector for radiation and reflection measurements. Temperatures as low as 450°C have been measured on metallized surfaces with an accuracy of better than 10°C without any a priori knowledge of the wafer emissivity.