A study of Cleaning Performance and Mechanisms in Dilute SC-1 Processing

1995 ◽  
Vol 386 ◽  
Author(s):  
P. J. Resnick ◽  
C. L. J. Adkins ◽  
P. J. Clews ◽  
E. V. Thomas ◽  
N. C. Korbe
Keyword(s):  
Elevated Temperatures ◽  
Input Power ◽  
Solution Chemistry ◽  
Dominant Factor ◽  
Surface Model ◽  
Particle Removal ◽  
Post Processing ◽  
Statistical Design Of Experiments ◽  
Ambient Lighting ◽  
P Type

ABSTRACTA statistical design of experiments (DOE) approach has been employed to evaluate the effects of megasonic input power, solution chemistry, bath temperature, and immersion time on particle removal in SC-1 chemistries. Megasonic input power was the dominant factor in the response surface model. Substantially diluted chemistries, performed with high megasonic input power and moderate-to-elevated temperatures. were shown to be very effective for small particle removal. Follow-on studies to the original DOE have led to an investigation of ultradilute SC-1 chemistries with megasonic power. These chemistries ranged from 0 to 1000 ppm of NH4OH and H2O2. Post processing light point defect (LPD) counts differ substantially between bare n and p-type Si<100>, and ambient lighting conditions are shown to influence LPD counts on p-type Si<100>. Solution properties such as pH and oxidation potential have been studied, and an investigation of post processing silicon surface properties is underway.

High thermoelectric efficiency in co-doped degenerate p-type PbTe

2010 ◽  
Vol 1267 ◽  
Author(s):  
Ioannis Androulakis ◽  
Ilyia Todorov ◽  
Duck Young Chung ◽  
Sedat Ballikaya ◽  
Guoyu Wang ◽  
...  
Keyword(s):  
Heavy Hole ◽  
Elevated Temperatures ◽  
Resonant State ◽  
Band Model ◽  
Hole Density ◽  
Thermoelectric Efficiency ◽  
Na Substitution ◽  
Valence Bands ◽  
P Type ◽  
Two Band Model

AbstractWe explored the effect of K and K-Na substitution for Pb atoms in the lattice of PbTe, in an effort to test a hypothesis for the development of a resonant state that may enhance the thermoelectric power. At 300K the data can adequately be explained by a combination of a single and two-band model for the valence band of PbTe depending on hole density that varies in the range 1-15 × 1019 cm-3. A change in scattering mechanism was observed in the temperature dependence of the electrical conductivity, σ, for samples concurrently doped with K and Na which results in significantly enhanced σ at elevated temperatures and hence power factors. Thermal conductivity data provide evidence of a strong interaction between the light- and the heavy-hole valence bands at least up to 500K. Figure of merits as high as 1.3 at 700K were measured as a result of the enhanced power factors.

Growth, Doping, Device Development and Characterization of CVD Beta-SiC Epilayers on Si(100) and Alpha-SiC(0001)

1987 ◽  
Vol 97 ◽  
Author(s):  
H. Kong ◽  
H. J. Kim ◽  
J. A. Edmond ◽  
J. W. Palmour ◽  
J. Ryu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Elevated Temperatures ◽  
Deep Level ◽  
Schottky Diodes ◽  
Free Carriers ◽  
Device Development ◽  
Post Annealing ◽  
P Type ◽  
Sic Films

ABSTRACTMonocrystalline β-SiC films have been chemically vapor deposited on Si(100) and c-SiC(0001) at 1660K-1823K and 0.1 MPa using SiH4 and C2H4 carried in H2. Films grown directly on Si(100) contained substantial concentrations of dislocations, stacking faults and antiphase boundaries (APB); those on α-SiC(0001) contained double positioning boundaries. Both the APBs and the double positioning boundaries were eliminated by using off-axis orientations of the respective substrates. Films produced on Si(100) have also been doped during growth and via ion implantation with B or Al (p-type) or P or N (n-type) at LN, room and elevated temperatures. Results from the former procedure showed the ionized dopant/total dopant concentration ratios for N, P, B and Al to be 0.1, 0.2, 0.002 and 0.01, respectively. The solubility limits of N, P and B at 1660K were determined to be ∼ 2E20, 1E18 and 8E18 cm−3, respectively; that of Al exceeds 2E19 cm−3. High temperature ion implantation coupled with dynamic and post annealing resulted in a markedly reduced defect concentration relative to that observed in similar research at the lower temperatures. Schottky diodes, p-n junctions, and MOSFET devices have been fabricated. The p-n junctions have the characteristics of insulators containing free carriers and deep level traps. The MOSFETs show very good I-V characteristics up to 673K, but have not been optimized.

Influence of Nucleation on the Crystallization Behavior of Electroless Nickel-Phosphorous Alloys

1996 ◽  
Vol 451 ◽  
Author(s):  
Robert Oberie
Keyword(s):  
Crystallization Behavior ◽  
Electroless Nickel ◽  
Large Degree ◽  
Solution Chemistry ◽  
Dominant Factor ◽  
Metal Catalyst ◽  
Scanning Calorimetry ◽  
Conventional View ◽  
Chemical Effects ◽  
Bulk Structure

AbstractThe production of amorphous electroless nickel (EN) deposits from hypophosphite (H2PO2−) containing solutions is well known. The crystallization of the deposits has been studied by differential scanning calorimetry (DSC) and the changes in crystallization behavior with deposit thickness have been attributed to chemical effects. In this work, DSC results from deposits initiated by use of a noble metal catalyst are compared to those from a conventional zincate.The implication of the DSC data is that the bulk structure of the EN deposit is determined to a large degree by the mechanism of deposit initiation. This is in contrast to the conventional view that solution chemistry is the dominant factor that determines the properties of the deposit.

Understanding the light-induced degradation at elevated temperatures: Similarities between multicrystalline and floatzone p-type silicon

2017 ◽  
Vol 26 (8) ◽  
pp. 533-542 ◽  
Author(s):  
Tim Niewelt ◽  
Florian Schindler ◽  
Wolfram Kwapil ◽  
Rebekka Eberle ◽  
Jonas Schön ◽  
...  
Keyword(s):  
Elevated Temperatures ◽  
Type Silicon ◽  
P Type

SELF-ASSEMBLED Ge-DOTS FOR Si SOLAR CELLS

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4347-4351 ◽  
Author(s):  
H. PRESTING ◽  
J. KONLE ◽  
H. KIBBEL
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Elevated Temperatures ◽  
Growth Conditions ◽  
Open Circuit ◽  
3 Dimensional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
P Type

Silicon solar cells with embedded germanium (Ge) layers deposited as 3-dimensional islands in the Stranski-Krastanov growth mode have been grown by molecular beam epitaxy (MBE) to enhance the efficiency of Si thin film solar cells. The Ge-layers increase the infrared absorption in the base of the cell to achieve higher photocurrent which should overcome the loss in the open circuit voltage due to incorporation of a smaller bandgap material in the heterostructure. Up to 75 layers of Ge, each about 8 monolayers (ML) thick, separated by Si-spacer layers (9-18nm) have been deposited at rather elevated temperatures (700°C) on a standard 10Ωcm p-type Si-substrate. Island densities of 1011 cm -2 have been achieved by use of antimony (Sb) as surfactant. Atomic force microscopy (AFM) and transmission electron microscopy (TEM) were used to characterize the growth of Ge-islands under variuos growth conditions. Photocurrent measurements exhibit a higher photo-response in the infrared regime but a lower open circuit voltage of the fabricated solar cells compared to a Si-reference cell.

Impact Failure Analysis of RC Beam Using ASPH Method Based on Damage Theory

2015 ◽  
Vol 784 ◽  
pp. 258-265
Author(s):  
Yoshimi Sonoda
Keyword(s):  
Failure Analysis ◽  
Yield Surface ◽  
Damage Mechanics ◽  
Impact Response ◽  
Dominant Factor ◽  
Surface Model ◽  
Anisotropic Damage ◽  
Rc Beam ◽  
Tensile Crack ◽  
Impact Failure

The aim of this paper is to propose the impact failure analysis of reinforced concrete beam using tensile softening technique based on the damage mechanics. In general, tensile crack is the most dominant factor for concrete and it is not appropriate to evaluate their effect by theory of plasticity. Thus mechanical failure of concrete is considered by not only conventional plastic theory but also damage mechanics. In the analysis to calculate the plastic deformation, Drucker-Prager yield surface model is employed, on the other hand Von-Mises yield surface model is applied for the reinforcing bar. Besides, mechanical influence of tensile crack in the concrete is also considered as the decrease of effective cross-section area using anisotropic damage variable. Several impact tests of RC beam are reviewed and their impact response are simulated by proposed analysis method. As a result, it is confirmed that proposed method can simulate impact response of RC beam and it could predict precise failure condition such as the distribution of concrete crack using anisotropic damage model.

Investigation of New Geometries for High Duty Cycle Far-Infrared p-Type Germanium Lasers

1999 ◽  
Vol 607 ◽  
Author(s):  
Danielle R. Chamberlin ◽  
Erik Bruendermannw ◽  
Eugene E. Haller
Keyword(s):  
Electric Field ◽  
Duty Cycle ◽  
Pulse Length ◽  
Far Infrared ◽  
Contact Geometry ◽  
Input Power ◽  
High Resistivity ◽  
Field Uniformity ◽  
P Type ◽  
Planar Contact

AbstractWe report on increasing the pulse length and repetition rate of p-type germanium lasers through miniaturization, increased electric field uniformity, and improved cooling. We have recently demonstrated that it is possible to improve the electric field uniformity necessary for an efficient laser and at the same time decrease the electrical input power by using a geometry with d/L>>1, where d is the distance between electrical contacts and L is the length in the direction of the Hall field. In order to achieve good heat sinking along with a large d/L ratio, we have developed a new, planar contact geometry. Attaching an undoped, high-resistivity, single-crystal Si heat sink to the base of the Ge planar contact laser increases the duty cycle by a factor of 5.5. In order to further decrease the input power by decreasing the volume of laser crystals in the planar contact geometry, we show as a proof-of-concept the use of polished strontium titanate single crystals as electrically insulating far-infrared mirrors based on restrahl band reflection. The physical phenomena underlying these improvements in this novel geometry will be discussed.

Theoretical properties of the N vacancy in p-type GaN(Mg,H) at elevated temperatures

2006 ◽  
Vol 99 (11) ◽  
pp. 113506 ◽  
Author(s):  
S. M. Myers ◽  
A. F. Wright ◽  
M. Sanati ◽  
S. K. Estreicher
Keyword(s):  
Elevated Temperatures ◽  
P Type
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