Electroplating of Fluoropolymers using ECR Plasma Deposited TiN as Interlayer

1995 ◽  
Vol 385 ◽  
Author(s):  
A. Weber ◽  
A. Dietz ◽  
R. Pöckelmann ◽  
C.-P. Klages
Keyword(s):  
Electron Cyclotron Resonance ◽  
Surface Film ◽  
Ionization Mass ◽  
Force Microscopy ◽  
Ecr Plasma ◽  
Atomic Force ◽  
Secondary Ionization Mass Spectrometry ◽  
Argon Ions ◽  
Electroplating Process ◽  
Low Temperature Process

ABSTRACTA novel low temperature process for titanium nitride (TiN) deposition by means of an electron cyclotron resonance (ECR) plasma CVD process was applied to poly(tetrafluoroethylene) (PTFE). The organometallic compound tetrakis(dimethylamido)titanium (TDMAT) introduced into the downstream region of a nitrogen ECR plasma was used as a precursor for TiN deposition at 100°C.The thin TiN films (thickness 15-30 nm) act as interlayers to activate the electroless deposition of copper followed by an electroplating process. Prior to the deposition of the interlayer, the samples were treated on a biased susceptor with argon ions to enhance the adhesion of the TiN interlayer. This metallization procedure avoids the use of toxic and pollutive etching agents and yields adherent copper layers on PTFE.The maximum adhesion of the metal film on PTFE was established to be 13 N/mm2. As shown by atomic force microscopy (AFM), TiN grains were formed on the fluoropolymer surface. Film composition was investigated by secondary ionization mass spectrometry (SIMS).

ECR Plasma Oxidation: Dependence on Energy of Argon Ion

1999 ◽  
Vol 585 ◽  
Author(s):  
S. Matsuo ◽  
M. Yamamoto ◽  
T. Sadoh ◽  
T. Tsurushima ◽  
D. W. Gao ◽  
...  
Keyword(s):  
Growth Rate ◽  
Flow Rate ◽  
Microwave Power ◽  
Electron Cyclotron Resonance ◽  
Ion Irradiation ◽  
Oxide Films ◽  
Ecr Plasma ◽  
Second Growth ◽  
Argon Ions ◽  
Argon Ion

AbstractEffects of ion-irradiation on oxidation of silicon at low temperatures (130°C) in an argon and oxygen mixed plasma excited by electron cyclotron resonance (ECR) interaction are investigated. First, dependence of energy and flux of incident ions on the flow rate and the microwave power is evaluated. It is shown that the flow rate and the microwave power are key parameters for controlling the energy and the flux of incident ions, respectively. Second, growth kinetics of the oxide films are studied. The growth rate depends on the energy and the flux of argon ions irradiated to the substrate, and the growth thickness increases proportionally to the root square of the oxidation time. Thus, the growth rate is limited by diffusion of oxidants enhanced by irradiation with argon ions. The effect of substrate bias on oxidation characteristics is also discussed. The electrical properties of the oxide films are improved by increasing the bias. The improvement is due to the reduction of damage at the surface of the substrate induced by the irradiation.

Direct Measurement of Ion Beam Induced, Nanoscale Roughening of GaN

2005 ◽  
Vol 864 ◽  
Author(s):  
Bentao Cui ◽  
P. I. Cohen ◽  
A. M. Dabiran
Keyword(s):  
Ion Beam ◽  
High Energy ◽  
Surface Relaxation ◽  
Surface Roughening ◽  
High Energy Electron ◽  
Force Microscopy ◽  
Atomic Force ◽  
Continuum Equation ◽  
Argon Ions ◽  
Nanoscale Patterns

AbatractThe formation of ion induced nanoscale patterns such as ripple, dots or pores can be described by a linear continuum equation consisting of a surface roughening term due to curvature-dependent sputtering or asymmetric attachment of vacancies, and a surface smoothing term due to thermal or ion-induced diffusion. By studying ion-induced dimple volume change using atomic force microscopy, we show a method to measure the ion-roughening coefficient. Using this method, we found the roughening coefficient í was 45 nm2/sec at 730K for initial ion etchings with 300 eV Argon ions. Cathodoluminescence measurements indicated Ga-vacancy formation during ion bombardment. The activation energy for surface relaxation after ion etching was about 0.12 eV as measured by reflection high energy electron diffraction.

Boron Nitride Materials for Tribological and High Temperature High Power Devices

1997 ◽  
Vol 495 ◽  
Author(s):  
N. Badi ◽  
A. Tempez ◽  
D. Starkov ◽  
N. Medelcr ◽  
A. Bensaoula ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Boron Nitride ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Damage Threshold ◽  
Laser Damage Threshold ◽  
Optical Damage ◽  
Force Microscopy ◽  
Ecr Plasma

ABSTRACTBoron nitride thin films on sapphire substrates were investigated for their tribological and optoelectronic applications. A gridless end Hall gun source and an electron cyclotron resonance (ECR) source were used for nitrogen species delivery while pure boron was evaporated at a rate of 0.2 Å/s. The surface stability of these thin films was investigated by high temperature annealing. Atomic force microscopy (AFM), friction force microscopy (FFM), and Knoop microhardness measurements were performed on the materials in order to assess their merits as tribological coatings. Finally, BN thin films were subjected to laser transient photoconductivity (TPC) experiments to determine both their optical laser damage threshold as well as their photoconductivity characteristics. For both single-pulse shot and multiple-pulse irradiation regimes, preliminary tests showed the higher the ion beam current used during growth (70–150 mA), the higher the optical damage threshold. The lower damage threshold was typical of BN films grown using an ECR plasma source and was measured to be in the range of ∼50 MW/cm2. Optical damage of films grown at ion beam currents above 100 mA was not observed at laser intensities up to few hundreds MW/cm2. A multiphoton excitation technique was utilized to obtain PC signals from this wide band gap material and preliminary results show that unusual PC voltage amplitudes as high as 0.5 V were observed.

Deposition of GaN Films on Freestanding CVD Thick Diamond Films

2010 ◽  
Vol 654-656 ◽  
pp. 1740-1743 ◽  
Author(s):  
Dong Zhang ◽  
Yi Zhen Bai ◽  
Fu Wen Qin ◽  
Ji Ming Bian
Keyword(s):  
Electron Cyclotron Resonance ◽  
Diamond Films ◽  
Chemical Vapor ◽  
High Energy ◽  
Organic Chemical ◽  
High Quality ◽  
Small Surface ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Organic

High quality GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The characteristics of GaN films were investigated by x-ray diffraction analysis (XRD), reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). The high quality GaN films with small surface roughness of 8.3 nm and high c-orientation are successfully achieved at the optimized nitriding time with the diamond substrate. These properties of GaN films with small surface smoothness and high c-orientation are well used as piezoelectric films for surface acoustic wave (SAW) devices.

Indentation behavior of a Brittle Film/Brittle Substrate Composite

1994 ◽  
Vol 356 ◽  
Author(s):  
C. M. Czarnik ◽  
R. Gibala ◽  
O. Baron ◽  
M. Nastasi ◽  
T. R. Jervis
Keyword(s):  
Elevated Temperatures ◽  
Surface Film ◽  
Dislocation Motion ◽  
Force Microscopy ◽  
Atomic Force ◽  
Ordered Alloys ◽  
Load Removal ◽  
Film Substrate ◽  
Composite Hardness ◽  
Radial Cracks

AbstractSurface-film induced plasticity caused by the generation of dislocations at the film-substrate interface has been demonstrated previously for bcc metals and B2 ordered alloys deformed at low homologous temperatures. More recently, we have observed similar effects at elevated temperatures for ZrO2-coated MoSi2, which also demonstrates a film-induced reduction in hardness for microhardness tests over 25°C - 1300°C. In this investigation, 120 nm - 480 nm thick ZrO2 films were deposited on (001) single crystal MoSi2 by electron beam deposition. These composites were used to characterize the film-induced softening of MoSi2 at room temperature, where both MoSi2 and ZrO2 are brittle. Indents were made through the film into the substrate at 0.5 kgf loads using Vickers and Knoop indenters. Atomic Force Microscopy was employed to measure the geometry of Knoop indents after load removal, and to compare the results to the loaded indentation shapes. Increasing film thickness reduces the length of radial cracks in the substrate and lowers the composite hardness. The film also changes the relative amounts of deformation associated with material pileup at the surface near the edges of the indent, suggesting a change in deformation mechanism from pileup around the indenter edges to deformation by dislocation motion in the bulk.

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