Stress, Microstructure, and Thermal Behavior in Mo/Si X-Ray Multilayers

1995 ◽  
Vol 382 ◽  
Author(s):  
Tai D. Nguyen ◽  
James H. Underwood
Keyword(s):  
Thermal Stress ◽  
Stress Relaxation ◽  
Magnetron Sputtering ◽  
Thermal Behavior ◽  
Microstructural Evolution ◽  
Intrinsic Stress ◽  
Working Pressure ◽  
X Ray ◽  
The Relationship

ABSTRACTThe relationship between intrinsic stress and microstructural evolution in nanometer Mo/Si multilayers deposited by magnetron sputtering at low working pressure (2.5 mTorr) is studied. The stress depends strongly on the microstructure which evolves with the multilayer period. In-situ thermal stress measurements show stress relaxation is observed in Mo/Si multilayers after annealing at 300°C in nitrogen ambient, due to microstructural changes in the multilayers. Average stress exhibits changes after annealing at 500°C which correspond to increased interdiffusion between the layer materials and crystallization at the interfaces.

X-ray diffraction study of thermal stress relaxation in ZnO films deposited by magnetron sputtering

2010 ◽  
Vol 519 (5) ◽  
pp. 1563-1567 ◽  
Author(s):  
F. Conchon ◽  
P.O. Renault ◽  
E. Le Bourhis ◽  
C. Krauss ◽  
P. Goudeau ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Stress Relaxation ◽  
Magnetron Sputtering ◽  
Diffraction Study ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thermal Stress Relaxation

Intrinsic Stress and Microstructural Evolution in Sputtered Nanometer Single and Multilayered Films

1994 ◽  
Vol 343 ◽  
Author(s):  
Tai D. Nguyen
Keyword(s):  
Film Thickness ◽  
Microstructural Evolution ◽  
Thin Layers ◽  
Intrinsic Stress ◽  
Working Pressure ◽  
Compressive Stresses ◽  
Columnar Grain ◽  
Si Films ◽  
Relationship Of ◽  
The Relationship

ABSTRACTThe relationship of intrinsic stress and microstructural evolution in nanometer thick Mo and Si films, and Mo/Si multilayers deposited by magnetron sputtering at low working pressure (2.5 mTorr) is studied. The stress depends strongly on the microstructure which evolves with the film thickness. Transition from tensile to compressive films is observed in the metal films, in which nucleation and columnar grain growth occur. Deposition of layered Mo films by time-delayed sequential sputtering of thin layers results in smaller grains that do not extend through the film thickness, and in more tensile stress state than thick films of trie same thickness. The Si films are highly compressive at all thicknesses studied. The multilayers in this study show compressive stresses, with higher compressive stress at longer periods, and decreasing stress at shorter periods. The interface stress in amorphous Mo/Si multilayers is determined to be 1.1 J/m2. Comparison with values in other systems is made.

scholarly journals In-situ x-ray studies of compositional control during synthesis of LaGaO3 by radio frequency-magnetron sputtering

2015 ◽  
Vol 107 (8) ◽  
pp. 081606 ◽  
Author(s):  
Matthew J. Highland ◽  
Dillon D. Fong ◽  
Guangxu Ju ◽  
Carol Thompson ◽  
Peter M. Baldo ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray ◽  
Compositional Control

scholarly journals Thermal Stability of Octadecyltrichlorosilane and Perfluorooctyltriethoxysilane Monolayers on SiO2

Nanomaterials ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 210
Author(s):  
Xiangdong Yang ◽  
Haitao Wang ◽  
Peng Wang ◽  
Xuxin Yang ◽  
Hongying Mao
Keyword(s):  
Thermal Stability ◽  
Thermal Behavior ◽  
Work Function ◽  
Photoelectron Spectroscopy ◽  
Vacuum Annealing ◽  
Moderate Temperature ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
X Ray ◽  
Thermal Stability Of

Using in situ ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS) measurements, the thermal behavior of octadecyltrichlorosilane (OTS) and 1H, 1H, 2H, and 2H-perfluorooctyltriethoxysilane (PTES) monolayers on SiO2 substrates has been investigated. OTS is thermally stable up to 573 K with vacuum annealing, whereas PTES starts decomposing at a moderate temperature between 373 K and 423 K. Vacuum annealing results in the decomposition of CF3 and CF2 species rather than desorption of the entire PTES molecule. In addition, our UPS results reveal that the work function (WF)of OTS remains the same after annealing; however WF of PTES decreases from ~5.62 eV to ~5.16 eV after annealing at 573 K.

Facility for combined in situ magnetron sputtering and soft x-ray magnetic circular dichroism

2006 ◽  
Vol 77 (7) ◽  
pp. 073903 ◽  
Author(s):  
N. D. Telling ◽  
G. van der Laan ◽  
M. T. Georgieva ◽  
N. R. S. Farley
Keyword(s):  
Circular Dichroism ◽  
Magnetron Sputtering ◽  
Magnetic Circular Dichroism ◽  
X Ray ◽  
Circular Dichroïsm

Effect of Deposition Conditions on Intrinsic Stress, Phase Transformation and Stress Relaxation in Tantalum Thin Films

1991 ◽  
Vol 239 ◽  
Author(s):  
A. Mutscheller ◽  
L. A. Clevenger ◽  
J.M.E. Harper ◽  
C. Cabrai ◽  
K. Barmakt
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Phase Transformation ◽  
Stress Relaxation ◽  
Compressive Stress ◽  
Stress Relief ◽  
Beta Phase ◽  
Alpha Phase ◽  
Intrinsic Stress

AbstractWe demonstrate that the high temperature polymorphic tantalum phase transition from the tetragonal beta phase to the cubic alpha phase causes complete stress relaxation and a large decrease in the resistance of tantalum thin films. 100 nm beta tantalum thin films were deposited onto thermally oxidized <100> silicon wafers by dc magnetron sputtering with argon. In situ stress and resistance at temperature were measured during temperature-ramped annealing in purified He. Upon heating, films that were initially compressively stressed showed increasing compressive stress due to thermo-elastic deformation from 25 to 550°C, slight stress relief due to plastic deformation from 550 to 700°C and complete stress relief due to the beta to alpha phase transformation at approximately 700–800°C. Incomplete compressive stress relaxation was observed at high temperatures if the film was initially deposited in the alpha phase or if the beta phase did not completely transform into alpha by 800°C. This incomplete beta to alpha phase transition was most commonly observed on samples that had radio frequency substrate bias greater than -100 V. We conclude that the main stress relief mechanism for tantalum thin films is the beta to alpha phase transformation that occurs at 700 to 800°C.

Electrical and structural properties of ultrathin polycrystalline and epitaxial TiN films grown by reactive dc magnetron sputtering

2009 ◽  
Vol 1156 ◽  
Author(s):  
Fridrik Magnus ◽  
Arni Sigurdur Ingason ◽  
Sveinn Olafsson ◽  
Jon Tomas Gudmundsson
Keyword(s):  
Magnetron Sputtering ◽  
Structural Properties ◽  
Dc Magnetron Sputtering ◽  
Single Crystalline ◽  
Tin Films ◽  
X Ray

AbstractUltrathin TiN films were grown by reactive dc magnetron sputtering on amorphous SiO2 substrates and single-crystalline MgO substrates at 600°C. The resistance of the films was monitored in-situ during growth to determine the coalescence and continuity thicknesses. TiN films grown on SiO2 are polycrystalline and have coalescence and continuity thicknesses of 8 Å and 19 Å, respectively. TiN films grow epitaxially on the MgO substrates and the coalescence thickness is 2 Å and the thickness where the film becomes continuous cannot be resolved from the coalescence thickness. X-ray reflection measurements indicate a significantly higher density and lower roughness of the epitaxial TiN films.

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