Real-Time Studies of The Electrocrystallization of Nanoscale Ceramic Superlattices

1995 ◽  
Vol 382 ◽  
Author(s):  
Teresa D. Golden ◽  
Richard J. Phillips ◽  
Jay A. Switzer

ABSTRACTElectrodeposition is unique among thin film deposition techniques, since the current following a potential step from open circuit to a given overpotential (i.e., driving force) provides a real-time, in situ probe of the deposition process. We have used current-time transients to determine the kinetics and dimensionality of growth, and to calculatethe composition profiles of electrodeposited superlattices in the Pb-TI-O system. The transients are indicative of 2D growth, and the height of the 2D monolayer depends on the orientation of the film. A [100] oriented film has a step height of 0.13 nm and a [210] oriented film has a step height of 0.18 nm. These heights correspond to the (400) and (220) d-spacings, respectively. Using a Cottrell analysis, we were able to both calculate and tailor the composition profile in these superlattices. Superlattices grown by pulsing between 70 and 150 mV have square profiles, while those grown by pulsing between 70 and 230 mV have graded profiles.

2013 ◽  
Vol 1538 ◽  
pp. 275-280
Author(s):  
S.L. Rugen-Hankey ◽  
V. Barrioz ◽  
A. J. Clayton ◽  
G. Kartopu ◽  
S.J.C. Irvine ◽  
...  

ABSTRACTThin film deposition process and integrated scribing technologies are key to forming large area Cadmium Telluride (CdTe) modules. In this paper, baseline Cd1-xZnxS/CdTe solar cells were deposited by atmospheric-pressure metal organic chemical vapor deposition (AP-MOCVD) onto commercially available ITO coated boro-aluminosilicate glass substrates. Thermally evaporated gold contacts were compared with a screen printed stack of carbon/silver back contacts in order to move towards large area modules. P2 laser scribing parameters have been reported along with a comparison of mechanical and laser scribing process for the scribe lines, using a UV Nd:YAG laser at 355 nm and 532 nm fiber laser.


Author(s):  
Monoj Kumar Singha ◽  
Vineet Rojwal

Thin film is used for sensing and electronic devices applications. Various techniques are used for thin film deposition. This chapter presents the Spray pyrolysis deposition technique used for the growth of thin films sensing and device material. Spray pyrolysis is an inexpensive method to grow good crystalline thin film compared to other thin film deposition techniques. The chapter gives an overview of the spray process used for thin film deposition. Basic setup for this process is explained. Parameters affecting the deposition process is explained, as are the various spray methods. Finally, some examples of spray pyrolysis in different applications like a gas sensor, UV photodetector, solar cell, photocatalysis, and supercapacitor are discussed.


Author(s):  
Vikash Ranjan ◽  
Krishna Aryal ◽  
Scott Little ◽  
Yunus Erkaya ◽  
Grace Rajan ◽  
...  

2012 ◽  
Vol 157-158 ◽  
pp. 1320-1323
Author(s):  
Branko Škorić ◽  
D. Kakaš ◽  
G. Favato ◽  
A. Miletić ◽  
M. Arsenovic

In this paper, we present the results of a study of TiN thin films which are deposited by a Physical Vapour Deposition (PVD) and Ion Beam Assisted Deposition (IBAD). In the present investigation the subsequent ion implantation was provided with N2+ ions. The ion implantation was applied to enhance the mechanical properties of surface. The thin film deposition process exerts a number of effects such as crystallographic orientation, morphology, topography, densification of the films.. A variety of analytic techniques were used for characterization, such as scratch test, calo test, Scanning electron microscopy (SEM), Atomic Force Microscope (AFM), X-ray diffraction (XRD) and Energy Dispersive X-ray analysis (EDAX).


1989 ◽  
Vol 161 ◽  
Author(s):  
J.K. Shurtleff ◽  
D.D. Allred ◽  
R.T. Perkins ◽  
J.M. Thorne

ABSTRACTThin film deposition techniques currently being used to produce multilayer x-ray optics (MXOs) have difficulty producing smooth, uniform multilayers with d-spacings less than about twelve angstroms. We are investigating atomic layer epitaxy (ALE) as an alternative to these techniques.ALE is a chemical vapor deposition technique which deposits an atomic layer of material during each cycle of the deposition process. The thickness of a film deposited by ALE depends only on the number of cycles. Multilayers deposited by ALE should be smooth and uniform with precise d-spacings which makes ALE an excellent technique for producing multilayer x-ray optics.We have designed and built an ALE system and we have used this system to deposit ZnSe using diethyl zinc and hydrogen selenide.


2011 ◽  
Vol 189-193 ◽  
pp. 2032-2036 ◽  
Author(s):  
Zhi Jian Wang ◽  
Xiao Feng Shang

Taking Silicon tetrachloride (SiCl4) and hydrogen (H2) as the reaction gas, by the method of plasma-enhanced chemical vapor deposition (PECVD), this paper simulates the deposition process of polycrystalline silicon thin film on the glass substrates in the software FLUENT. Three dimensional physical model and mathematics model of the simulated area are established. The reaction mechanism including main reaction equation and several side equations is given during the simulation process. The simulation results predict the velocity field, temperature distribution, and concentration profiles in the PECVD reactor. The simulation results show that the deposition rate of silicon distribution is even along the circumference direction, and gradually reduced along the radius direction. The deposition rate is about 0.005kg/(m2•s) at the center. The simulated result is basically consistent with the practical one. It means that numerical simulation method to predict deposition process is feasible and the results are reliable in PECVD system.


2019 ◽  
Vol 891 ◽  
pp. 195-199
Author(s):  
Theerapol Thurakitseree ◽  
Chupong Pakpum

According to their wonderful properties, carbon nanotubes (CNTs) have been well known for decades. The synthesis process and catalyst deposition method have also drawn attention to control the nanotube structure and properties. Sputtering method is then one promising option to grow the nanotubes in mass production. This method is, however, still costly. Here, we have presented a simple low-cost custom-made DC magnetron sputtering for catalyst thin film deposition. Three different metal thin films (Fe, Ni, Cu) deposited on Si substrates have been employed to investigate nanotube production. Prior to deposition of the catalysts, Al was used as supporting layer. (Al/Fe, Al/Ni, Al/Cu). CNTs were grown by chemical vapor deposition process at 800°C. Ethanol was preliminary used as a carbon source. It was found that CNTs could be successfully grown from only Al/Ni catalysts in our system with the diameter of approximately 200 nm, where the rest of samples were not observed. In addition, vertical-aligned CNTs with the thickness of about 10 μm could be obtained when acetylene was replaced instead of ethanol with reducing partial pressure of the feedstock. A large D-band at 1338 cm-1 with broader G-band at 1582 cm-1 from Raman spectra give a rise to multi layers growth of sp2 carbon walls. Such dimension suggests that it is the characteristic of multi-walled carbon nanotubes.


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