Evaluation Of Amorphous Diamond-Like Carbon And Boron Nitride Films As Low Permittivity Dielectrics

1995 ◽  
Vol 381 ◽  
Author(s):  
J. P. Sullivan ◽  
T. A. Friedmann ◽  
C. A. Apblett ◽  
M. P. Siegal ◽  
N. Missert ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Electron Cyclotron Resonance ◽  
Hexagonal Boron Nitride ◽  
Dielectric Constants ◽  
Environmental Stability ◽  
Cubic Phase ◽  
Diamond Like Carbon ◽  
Metal Insulator ◽  
Dielectric Characteristics ◽  
Metal Insulator Metal

AbstractAlthough films of diamond-like carbon (DLC) and hexagonal boron nitride (h-BN) have shown low dielectric constants in the range of 3 to 4, these materials have been unsuitable for use as interconnect dielectrics due to poor thermal stability and environmental degradation. These deficiencies can be addressed by depositing DLC films free of hydrogen (a-tC) and depositing the cubic phase of BN (c-BN). The dielectric characteristics of hydrogen-free DLC and c-BN that have been deposited by pulsed-laser deposition (PLD) have been evaluated using metal-insulator-metal and metal-insulator-semiconductor structures. For comparison, the dielectric characteristics of h-BN deposited by electron cyclotron resonance (ECR) were also evaluated. Despite the superior thermal and environmental stability of the a-tC and c-BN films and the attractively low deposition thermal budget (room temperature deposition for a-tC films, 400°C for c-BN films), the films exhibit dielectric constants comparable to those of bulk diamond and bulk BN, ∼ 6. Furthermore, the a-tC and c-BN films exhibit high compressive stress in the GPa range which limits their usefulness only to those applications requiring a thin dielectric layer, e.g. diffusion barriers or encapsulants.

First-principles study on the heterostructure of twisted graphene/hexagonal boron nitride/graphene sandwich structure

2021 ◽  
Author(s):  
Yiheng Chen ◽  
Wen-Ti Guo ◽  
Zi-si Chen ◽  
Suyun Wang ◽  
Jian-Min Zhang
Keyword(s):  
Phase Transition ◽  
Boron Nitride ◽  
Charge Density ◽  
First Principles ◽  
Sandwich Structure ◽  
Hexagonal Boron Nitride ◽  
Mulliken Population ◽  
Metal Insulator ◽  
Insulator Phase Transition ◽  
Twisted Graphene

Abstract In recent years, the discovery of "magic angle" graphene has given new inspiration to the formation of heterojunctions. Similarly, the use of hexagonal boron nitride, known as white graphene, as a substrate for graphene devices has more aroused great interest in the graphene/hexagonal boron nitride (G/hBN) heterostructure system. Based on the first principles method of density functional theory, the band structure, density of states, Mulliken population, and differential charge density of a tightly packed model of twisted graphene/hexagonal boron nitride/graphene (G/hBN/G) sandwich structure have been studied. Through the establishment of heterostructure models TBG inserting hBN with different twisted angles, it was found that the band gap, Mulliken population, and charge density, exhibited specific evolution regulars with the rotation angle of the upper graphene, showing novel electronic properties and realizing metal-insulator phase transition. We find that the particular value of the twist angle at which the metal-insulator phase transition occurs and propose a rotational regulation mechanism with angular periodicity. Our results have guiding significance for the practical application of heterojunction electronic devices.

Tribology in Superplastic Forming Processing of 3Y-TZP/Al2O3 Ceramic at Elevated Temperatures

2007 ◽  
Vol 551-552 ◽  
pp. 507-512
Author(s):  
F. Wang ◽  
Kai Feng Zhang ◽  
Wen Bo Han
Keyword(s):  
High Pressure ◽  
Boron Nitride ◽  
Friction Factor ◽  
Elevated Temperatures ◽  
Hexagonal Boron Nitride ◽  
Superplastic Forming ◽  
Ceramic Materials ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
Higher Temperature

Superplastic forming processing of ceramic materials at high temperatures and high pressure puts forward very high requests to moulds and lubricants, at which conditions seeking for appropriate lubricants is one of important preconditions in the superplastic forming of ceramic materials. Using ring compressive testing, lubricities of hexagonal boron nitride in superplastic compressive forming processing of 3Y-TZP/Al2O3 ceramic composite at elevated temperatures were investigated. Theoretical curves of friction factor were drawn according to upper bound method. Ring compressive tests were adopted at temperature of 1400 °C-1600 °C. The results indicate that when BN is used, friction factor is about 0.4, meanwhile friction factor don’t have great changes with higher temperature and increasing strain rate. X-ray diffraction shows that under high temperature and high pressure no boron nitride converts to cubic phase, which remains at room temperature.

Building resistive switching memory having super-steep switching slope with in-plane boron nitride

2021 ◽  
Author(s):  
Yisen Wang ◽  
Zhifang Huang ◽  
Xinyi Chen ◽  
Miao Lu
Keyword(s):  
Boron Nitride ◽  
Metal Ions ◽  
Resistive Switching ◽  
Hexagonal Boron Nitride ◽  
High Resistance State ◽  
Two Dimensional ◽  
Horizontal Structure ◽  
Metal Insulator Metal ◽  
Resistance State ◽  
Pass Through

Abstract The two-dimensional hexagonal boron nitride (h-BN) has been used as resistive switching (RS) material for memory due to its insulation, good thermal conductivity and excellent thermal/chemical stability. A typical h-BN based RS memory employs a Metal-Insulator-Metal (MIM) vertical structure, in which metal ions pass through the h-BN layers to realize the transition from high resistance state (HRS) to low resistance state (LRS). Alternatively, just like the horizontal structure widely used in the traditional MOS capacitor based memory, the performance of in-plane h-BN memory should also be evaluated to determine its potential applications. As consequence, a horizontal structured resistive memory has been designed in this work by forming freestanding h-BN across Ag nanogap, where the two-dimensional h-BN favored in-plane transport of metal ions to emphasize the RS behavior. As a result, the memory devices showed switching slope down to 0.25 mV/dec, ON/OFF ratio up to 1E8, SET current down to pA and SET voltage down to 180 mV.

The Effect of Different Dielectric Materials in Designing High-Performance Metal-Insulator-Metal (MIM) Capacitors

2017 ◽  
Vol 7 (3) ◽  
pp. 1554
Author(s):  
M. A. Zulkifeli ◽  
S. N. Sabki ◽  
S. Taking ◽  
N. A. Azmi ◽  
S. S. Jamuar
Keyword(s):  
Breakdown Voltage ◽  
High Performance ◽  
Dielectric Materials ◽  
Dielectric Constants ◽  
Metal Insulator ◽  
Low Leakage ◽  
Dielectric Layers ◽  
Metal Insulator Metal ◽  
Materials Used ◽  
Mim Capacitors

<p>A Metal-Insulator-Metal (MIM) capacitor with high capacitance, high breakdown voltage, and low leakage current is aspired so that the device can be applied in many electronic applications. The most significant factors that affect the MIM capacitor’s performance is the design and the dielectric materials used. In this study, MIM capacitors are simulated using different dielectric materials and different number of dielectric layers from two layers up to seven layers.  The effect of the different dielectric constants (<em>k</em>) to the performance of the MIM capacitors is also studied, whereas this work investigates the effect of using low-<em>k</em> and high-<em>k</em> dielectric materials. The dielectric materials used in this study with high-<em>k</em> are Al<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub>, while the low-<em>k</em> dielectric materials are SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub>. The results demonstrate that the dielectric materials with high-<em>k</em> produce the highest capacitance. Results also show that metal-Al<sub>2</sub>O<sub>3</sub> interfaces increase the performance of the MIM capacitors. By increasing the number of dielectric layers to seven stacks, the capacitance and breakdown voltage reach its highest value at 0.39 nF and 240 V, respectively.</p>

CHARACTERIZATION OF CUBIC BORON NITRIDE THIN FILMS DEPOSITED BY RF SPUTTER

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4339-4342 ◽  
Author(s):  
JINXIANG DENG ◽  
GUANGHUA CHEN ◽  
XUEMEI SONG
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Photoelectron Spectroscopy ◽  
Hexagonal Boron Nitride ◽  
Cubic Boron Nitride ◽  
Cubic Phase ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Fourier Transformation Infrared Spectroscopy

Cubic boron nitride (c-BN) thin films have been deposited on Si substrates by radio frequency sputter. Sputtering target was hot pressed hexagonal boron nitride of 4N purity. Sputtering gas was the mixture of nitrogen and argon. During depositing c-BN thin films, substrates were biased by dc voltage negatively with respect to ground. By optimizing the deposition conditions, the boron nitride (BN) films containing a large amount of cubic phase were obtained. The samples were characterized with Fourier transformation infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). According to FTIR, the cubic phase content of c-BN thin films was evaluated to be 92. The B/N ratio was estimated to be approximately 1 from XPS. The AFM shows that the c-BN thin films delaminated from Si substrates obviously.

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