Thermal Nitridation of Silicon in Active Nitrogen
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AbstractThe dissociation of N2 in a microwave discharge has been studied using a gas phase titration between N(4S) and NO. SF6 added in small concentrations (20–100 ppm of N2) is shown to be an efficient catalyst for dissociating N2. Dissociation fractions [N]/[N2 ] of 4–5% have been obtained. The studies suggest how the partial pressure of atomic nitrogen can be maximized. These results have been applied to thermal nitridation of Si in active nitrogen. A strong dependence of the film thickness on the partial pressure of atomic nitrogen (PN) has been shown. In addition to the nitridation rate, the nitrogen fraction [N]/([N] + [O]) also increases with PN.
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2016 ◽
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2010 ◽
Vol 109
(5)
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pp. 346-352
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1992 ◽
Vol 114
(2)
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pp. 771-773
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2014 ◽
Vol 490-491
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pp. 311-314
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1967 ◽
Vol 45
(22)
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pp. 2837-2840
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