Polarized Cathodoluminescence Study of (InP)2/(GaP)2 Bilayer Superlattice Structures

1995 ◽  
Vol 379 ◽  
Author(s):  
Y. Tang ◽  
K. Rammohan ◽  
H.T. Lin ◽  
D.H. Rich ◽  
P. Colter ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Spectral Lineshape ◽  
Superlattice Structure ◽  
Electron Beam Excitation ◽  
Optical Effects ◽  
Nonlinear Optical Effects ◽  
Linearly Polarized ◽  
Imaging And Spectroscopy ◽  
Superlattice Structures ◽  
Cathodoluminescence Study

ABSTRACTLinearly polarized cathodoluminescence (LPCL) imaging and spectroscopy techniques have been employed to examine the optical properties and homogeneity of (InP)2/(GaP)2 bilayer superlattice (BSL) structures which exhibit a lateral composition modulation that leads to the formation of quantum wires. LPCL spectra were measured for various temperature and electron beam excitation densities. The magnitude of the polarization anisotropy and spectral lineshape are found to depend sensitively on the excitation conditions, revealing large nonlinear optical effects in these samples. CL images reveal that defects in the bilayer superlattice structure originate from the GaAs substrate or the initial stages of InGaP growth.

Vector beams excited nonlinear optical effects

2018 ◽  
Vol 27 (04) ◽  
pp. 1850045 ◽  
Author(s):  
Bing Gu ◽  
Xi Cao ◽  
Guanghao Rui ◽  
Yiping Cui
Keyword(s):  
Nonlinear Optical ◽  
Polarization Distribution ◽  
Polarized Beams ◽  
Optical Media ◽  
Optical Effects ◽  
Tight Focusing ◽  
Nonlinear Optical Effects ◽  
Vector Beams ◽  
Linearly Polarized ◽  
Light Beams

Vector beams with the desired polarization structure interacting with matter result in many novel nonlinear optical effects. Herein, we review the tight focusing and weak focusing properties of three types of light beams, namely, linearly polarized beams, cylindrical vector beams, and hybridly polarized beams. In particular, we revisit the second- and third-order nonlinear optical effects in nonlinear optical media under the excitation of several types of vector beams with the desired polarization distribution. The prospects of their applications in nonlinear optical microscopy and materials characterization are also briefly discussed.

Observation of GaAs/AlAs Superlattice Structures in both Secondary and Backscattcred Electron Imaging Modes with an Ultrahigh Resolution Scanning Electron Microscope

1990 ◽  
Vol 48 (1) ◽  
pp. 404-405
Author(s):  
K. Ogura ◽  
A. Ono ◽  
S. Franchi ◽  
P.G. Merli ◽  
A. Migliori
Keyword(s):  
Gaas Layer ◽  
Objective Lens ◽  
Superlattice Structure ◽  
Backscattered Electron ◽  
Instrumental Resolution ◽  
Electron Microscopes ◽  
Superlattice Structures ◽  
Electron Imaging ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

In the last few years the development of Scanning Electron Microscopes (SEM), equipped with a Field Emission Gun (FEG) and using in-lens specimen position, has allowed a significant improvement of the instrumental resolution . This is a result of the fine and bright probe provided by the FEG and by the reduced aberration coefficients of the strongly excited objective lens. The smaller specimen size required by in-lens instruments (about 1 cm, in comparison to 15 or 20 cm of a conventional SEM) doesn’t represent a serious limitation in the evaluation of semiconductor process techniques, where the demand of high resolution is continuosly increasing. In this field one of the more interesting applications, already described (1), is the observation of superlattice structures.In this note we report a comparison between secondary electron (SE) and backscattered electron (BSE) images of a GaAs / AlAs superlattice structure, whose cross section is reported in fig. 1. The structure consist of a 3 nm GaAs layer and 10 pairs of 7 nm GaAs / 15 nm AlAs layers grown on GaAs substrate. Fig. 2, 3 and 4 are SE images of this structure made with a JEOL JSM 890 SEM operating at an accelerating voltage of 3, 15 and 25 kV respectively. Fig. 5 is a 25 kV BSE image of the same specimen. It can be noticed that the 3nm layer is always visible and that the 3 kV SE image, in spite of the poorer resolution, shows the same contrast of the BSE image. In the SE mode, an increase of the accelerating voltage produces a contrast inversion. On the contrary, when observed with BSE, the layers of GaAs are always brighter than the AlAs ones , independently of the beam energy.

Photoinduced nonlinear optical effects in Nd-doped δ-BiB3O6 crystals

2014 ◽  
Vol 610 ◽  
pp. 82-85 ◽  
Author(s):  
A. Majchrowski ◽  
A. Wojciechowski ◽  
I.V. Kityk ◽  
M. Chrunik ◽  
L.R. Jaroszewicz ◽  
...  
Keyword(s):  
Nonlinear Optical ◽  
Optical Effects ◽  
Nonlinear Optical Effects

Mechanism for linear and nonlinear optical effects in monoclinic bismuth borate (BiB3O6) crystal

2001 ◽  
Vol 90 (11) ◽  
pp. 5585-5590 ◽  
Author(s):  
Zheshuai Lin ◽  
Zhizhong Wang ◽  
Chuangtian Chen ◽  
Ming-Hsie Lee
Keyword(s):  
Nonlinear Optical ◽  
Bismuth Borate ◽  
Optical Effects ◽  
Nonlinear Optical Effects ◽  
Linear And Nonlinear

Large Mid-IR Second-Order Nonlinear-Optical Effects Designed by the Supramolecular Assembly of Different Bond Types without IR Absorption

2013 ◽  
Vol 52 (15) ◽  
pp. 8865-8871 ◽  
Author(s):  
Xiao-Ming Jiang ◽  
Guan-E Wang ◽  
Zhi-Fa Liu ◽  
Ming-Jian Zhang ◽  
Guo-Cong Guo
Keyword(s):  
Nonlinear Optical ◽  
Supramolecular Assembly ◽  
Second Order ◽  
Ir Absorption ◽  
Optical Effects ◽  
Nonlinear Optical Effects

Magneto-conductive encryption assisted by third-order nonlinear optical effects in carbon/metal nanohybrids

2017 ◽  
Vol 4 (3) ◽  
pp. 035601 ◽  
Author(s):  
J A García-Merino ◽  
C Mercado-Zúñiga ◽  
C L Martínez-González ◽  
C R Torres-SanMiguel ◽  
J R Vargas-García ◽  
...  
Keyword(s):  
Nonlinear Optical ◽  
Third Order ◽  
Optical Effects ◽  
Nonlinear Optical Effects
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