Introduction of Radiative Isoelectronic Complexes During Molecular Beam Epitaxial Growth of Si and Si1-xGex/Si Superlattices

1995 ◽  
Vol 378 ◽  
Author(s):  
Karen L. Moore ◽  
Oliver King ◽  
Dennis G. Hall ◽  
Joze Bevk ◽  
Matthias Furtsch
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Experimental Results ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth ◽  
Phonon Linewidth ◽  
Ion Implanted

AbstractRadiative isoelectronic impurity complexes consisting of pairs of Be atoms that bind excitons can be formed in both Si and SiGe/Si superlattices during growth by molecular beam epitaxy. We describe the conditions under which these radiative complexes can be formed and show that they can be localized in the alloy layers of a superlattice. Experimental results from samples with grown-in Be are compared to previous results from ion implanted samples. Superlattices of varying well widths are examined and a narrowing of the no-phonon linewidth is observed.

Kinetics of Ge Segregation in the Presence of Sb During Molecular Beam Epitaxy

1991 ◽  
Vol 220 ◽  
Author(s):  
S. Fukatsu ◽  
K. Fujita ◽  
H. Yaguchi ◽  
Y. Shiraki ◽  
R. Ito
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Lower Limit ◽  
Molecular Beam ◽  
Growth Direction ◽  
High Concentration ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth ◽  
Kinetics Of

Kinetics of Ge segregation during molecular beam epitaxial growth is described. It is shown that the Ge segregation is self-limited in Si epitaxial overlayers due to a high concentration effect when the Ge concentration exceeds 0.01 monolayer (ML). As a result, segregation profiles of Ge are found to decay non-exponentially in the growth direction. This unusual Ge segregation was found to be suppressed with an adlayer of strong segregant, Sb, during the kinetic MBE growth. We develop a novel scheme to realize sharp Si/Ge interfaces with strong segregante. Lower limit of the effective amount of Sb for this was found to be 0.75 ML.

Surface Activity of Magnesium During GaN Molecular Beam Epitaxial Growth

1999 ◽  
Vol 595 ◽  
Author(s):  
V. Ramachandran ◽  
R. M. Feenstra ◽  
J. E. Northrup ◽  
D. W. Greve
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial ◽  
Electron Counting ◽  
Surface Reconstructions ◽  
Small Doses ◽  
Molecular Beam Epitaxial Growth ◽  
Gan Film

AbstractExposure of wurtzite GaN films grown on Si-polar 6H-SiC(0001) to magnesium during molecular beam epitaxy (MBE) has been studied. In the nitrogen rich regime of MBE growth, GaN films are known to grow with rough morphology. We observe on GaN(0001) that small doses of Mg act as a surfactant, smoothing out this roughness. An interpretation of this surfactant behavior is given in terms of electron counting arguments for the surface reconstructions. Previously, we have reported that larger doses of Mg lead to inversion of the Ga-polar GaN film to produce N-polar GaN. Several Mg-related reconstructions of the resulting GaN(000 ) surface are reported.

Molecular-beam-epitaxial growth of Ga1−xInxSb on GaAs substrates

1997 ◽  
Vol 175-176 ◽  
pp. 883-887 ◽  
Author(s):  
J.H. Roslund ◽  
O. Zsebők ◽  
G. Swenson ◽  
T.G. Andersson
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide

2011 ◽  
Vol 334 (1) ◽  
pp. 113-117 ◽  
Author(s):  
Kevin Goodman ◽  
Vladimir Protasenko ◽  
Jai Verma ◽  
Tom Kosel ◽  
Grace Xing ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Aluminum Oxide ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of low‐resistivity ZnSe films

1979 ◽  
Vol 35 (2) ◽  
pp. 97-98 ◽  
Author(s):  
Takafumi Yao ◽  
Yunosuke Makita ◽  
Shigeru Maekawa
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Low Resistivity ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of InAs self-assembled quantum dots with light-emission at 1.3μm

2000 ◽  
Vol 208 (1-4) ◽  
pp. 93-99 ◽  
Author(s):  
Y Nakata ◽  
K Mukai ◽  
M Sugawara ◽  
K Ohtsubo ◽  
H Ishikawa ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Light Emission ◽  
Molecular Beam Epitaxial ◽  
Self Assembled ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of Fe/Cr multilayers on (001)GaAs

1988 ◽  
Vol 53 (2) ◽  
pp. 162-164 ◽  
Author(s):  
P. Etienne ◽  
G. Creuzet ◽  
A. Friederich ◽  
F. Nguyen‐Van‐Dau ◽  
A. Fert ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth and performance of HgCdTe-based simultaneous-mode two-color detectors

1998 ◽  
Vol 27 (6) ◽  
pp. 747-751 ◽  
Author(s):  
R. D. Rajavel ◽  
D. M. Jamba ◽  
J. E. Jensen ◽  
O. K. Wu ◽  
P. D. Brewer ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
And Performance ◽  
Molecular Beam Epitaxial Growth
Sign in / Sign up

Export Citation Format

Share Document