Hydrogenation of Multicrystalline Si-Materials for Solar Cells: Discrimination Between Effects in the Intra-Grain and Grain Boundary Regions

1995 ◽  
Vol 378 ◽  
Author(s):  
J. Poortmans ◽  
M. Rosmeulen ◽  
A. Kaniava ◽  
J. Vanhellemont ◽  
H. Elgamel ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Grain Boundary ◽  
Impurity Content ◽  
Metallic Impurity ◽  
Rf Plasma ◽  
Small Scale ◽  
Hydrogenation Treatment

AbstractIn this paper we describe the results of a study on the hydrogenation treatment of multicrystalline substrates by an RF-plasma with emphasis on discriminating between effects on the intra-grain material and grain boundary regions. For this purpose small mesa-type diodes were processed. Two types of multicrystalline material are being compared in this study. The main difference between these materials is their oxygen and metallic impurity content. The effects of the hydrogenation treatment were studied by means of I-V and DLTS-measurements. Finally, we will present data on small multicrystalline solar cells and the effect of hydrogenation on the main parameters of this device to illustrate the correlation and the differences between the measurements on small-scale diodes and the effects on the macroscopic device which is the solar cell.

Inspection Of Recombination Active Defects For Sige And Solar Cells

1996 ◽  
Vol 442 ◽  
Author(s):  
O.V. Astafiev ◽  
V.P. Kalinushkin ◽  
N.V. Abrosimov
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Light Scattering ◽  
Grain Boundary ◽  
Single Crystals ◽  
Defect Structure ◽  
Scattering Method ◽  
Recombination Activity ◽  
Cell Production ◽  
Materials Used

AbstractMapping Low Angle Light Scattering method (MLALS) is proposed to study defect structure in materials used for solar cell production. Several types of defects are observed in Czochralski Si1−xGex (0.022<x<0.047) single crystals. Recombination activity of these defects is investigated. The possibility of contactless visualisation of grain boundary recombination in polysilicon is also demonstrated.

Self-assembled propylammonium cations at grain boundaries and the film surface to improve the efficiency and stability of perovskite solar cells

2019 ◽  
Vol 7 (41) ◽  
pp. 23739-23746 ◽  
Author(s):  
Chengbin Fei ◽  
Meng Zhou ◽  
Jonathan Ogle ◽  
Detlef-M. Smilgies ◽  
Luisa Whittaker-Brooks ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Perovskite Solar Cells ◽  
Film Surface ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Large Size ◽  
Moisture Stability

Large size cation (PA) was introduced into the grain boundary and film surface of the 3D perovskite to improve the solar cell efficiency and moisture stability.

Protocrystalline Si:H p-type Layers for Maximization of the Open Circuit Voltage in a-Si:H n-i-p Solar Cells

2002 ◽  
Vol 715 ◽  
Author(s):  
R. J. Koval ◽  
Chi Chen ◽  
G. M. Ferreira ◽  
A. S. Ferlauto ◽  
J. M. Pearce ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Gas Flow ◽  
Open Circuit Voltage ◽  
Film Growth ◽  
Chemical Vapor ◽  
Open Circuit ◽  
Single Step ◽  
Rf Plasma ◽  
Growth Regime

AbstractWe have revisited the issue of p-layer optimization for amorphous silicon (a-Si:H) solar cells, correlating spectroscopic ellipsometry (SE) measurements of the p-layer in the device configuration with light current-voltage (J-V) characteristics of the completed solar cell. Working with p-layer gas mixtures of H2/SiH4/BF3 in rf plasma-enhanced chemical vapor deposition (PECVD), we have found that the maximum open circuit voltage (Voc) for n-i-p solar cells is obtained using p-layers prepared with the maximum possible hydrogen-dilution gas-flow ratio R=[H2]/[SiH4], but without crossing the thickness-dependent transition from the a-Si:H growth regime into the mixed-phase amorphous + microcrystalline [(a+μc)-Si:H] regime for the ∼200 Å p-layers. As a result, optimum single-step p-layers are obtained under conditions similar to those applied for optimum i-layers, i.e., by operating in the so-called “protocrystalline” Si:H film growth regime. The remarkable dependence of the p-layer phase (amorphous vs. microcrystalline) and n-i-p solar cell Voc on the nature of the underlying i-layer surface also supports this conclusion.

Quantifying the energy loss for the perovskite solar cell passivated by acetamidine halide

2021 ◽  
Author(s):  
Ligang Yuan ◽  
Huiming Luo ◽  
Jiarong Wang ◽  
Zonghao Xu ◽  
Jiong Li ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Grain Boundary ◽  
Energy Loss ◽  
Perovskite Solar Cells ◽  
Boundary Surface ◽  
Perovskite Solar Cell ◽  
Nonradiative Recombination ◽  
Surface And Interface ◽  
Recombination Centers

The defects at the grain boundary, surface and interface, acting as nonradiative recombination centers, results in considerable energy loss of perovskite solar cells (PSCs). Herein, we passivated the defects of...

Activation Energy Analysis of Dark and Laser Illuminated I-V Characteristics of Thin-Film Poly Silicon Solar Cells

2010 ◽  
Author(s):  
M. Boostandoost ◽  
U. Kerst ◽  
C. Boit
Keyword(s):  
Thin Film ◽  
Activation Energy ◽  
Solar Cells ◽  
Solar Cell ◽  
Grain Boundary ◽  
Thin Film Solar Cell ◽  
Reverse Bias ◽  
Reverse Current ◽  
Thin Film Solar Cells ◽  
Si Thin Film

Abstract The temperature dependence of photocurrent of polycrystalline Si (poly-Si) thin-film solar cells on glass with interdigitated mesa structure has been locally investigated using Infrared Light Beam Induced Current (IR-LBIC) in the temperature range of -25 to +70 °C. The temperature dependence of electrical characteristics of poly-Si thin-film solar cells in reverse bias has been also analysed and compared with the monocrystalline thin-film solar cells. The poly-Si solar cell shows a temperature coefficient (TC) for the photocurrent of around +0.8 and +0.6 %/°C in the grain interior and grain boundary, respectively. The activation energy of the reverse current and also the photocurrent due to the IR laser stimulation has been evaluated, which provide information about traps and their energy levels in the absorber layer of the poly-Si thin-film solar cell. The obtained average value of the activation energy associated with the photocurrent of the poly-Si cell suggests the existence of a shallow acceptor level at around 0.045 eV in the grain boundary and 0.062 eV in the grain interior of the absorber layer of the poly-Si thin-film solar cell. The activation energies of the reverse current for poly-Si and monocrystalline cells have been calculated when the device is biased at -1 and -2 V and the results compared with the activation energy of the saturation current obtained from extrapolation of the I-V curve in the SRH (Shockley-Read-Hall) regime. The results show strong voltage dependence. In both cases the activation energy of the reverse current decreases in the reverse bias voltage, approaching the values obtained from the photocurrent.

Amorphous and Microcrystalline Silicon Solar Cells Grown by Pulsed PECVD Technique

2002 ◽  
Vol 715 ◽  
Author(s):  
Ujjwal K. Das ◽  
Scott Morrison ◽  
Arun Madan
Keyword(s):  
Growth Rate ◽  
Solar Cells ◽  
Solar Cell ◽  
Layer Growth ◽  
Rf Plasma ◽  
Utilization Rate ◽  
Large Area ◽  
Crystallite Orientation ◽  
Gas Utilization ◽  
Layer Growth Rate

AbstractThe Pulsed PECVD technique involves modulating the standard 13.56 MHz RF plasma, in the kHz range. This allows an increase in the electron density during the ‘ON’ cycle, while in the ‘OFF’ cycle neutralizing the ions responsible for dust formation in the plasma. In this work, we report the increase of i-layer growth rate and silane gas utilization rate (GUR) for amorphous Si p-i-n solar cells grown in a large area (30 cm × 40 cm) single chamber deposition system. The i-layer growth rate of 5.4 Å/sec with a GUR of >15% has been achieved, which shows a device efficiency of 8.3% (almost same as of our conventional PECVD grown a-Si:H solar cell with ilayer growth rate of ∼1 Å/sec). We also deposited microcrystalline Si p-i-n devices using the Pulsed PECVD technique. The crystallite orientation of the films changes from a random to a (220) orientation near the microcrystalline-to-amorphous transition. The effects of crystallite orientation, grain boundaries and ion bombardment during growth on the solar cell performances are investigated. An efficiency of 4.8% for single junction μc-Si:H p-i-n device has been achieved for the i-layer thickness of 0.9 μm.

Boron-Nitrogen Doped Dihydroindeno[1,2-b]fluorene Derivatives as Acceptors in Organic Solar Cells

2019 ◽  
Author(s):  
Matthew Morgan ◽  
Maryam Nazari ◽  
Thomas Pickl ◽  
J. Mikko Rautiainen ◽  
Heikki M. Tuononen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Organic Solar Cells ◽  
Organic Solar Cell ◽  
Broad Absorption ◽  
Nitrogen Doped ◽  
Large Depth ◽  
End Products ◽  
Boron Nitrogen ◽  
The Way

The electrophilic borylation of 2,5-diarylpyrazines results in the formation of boron-nitrogen doped dihydroindeno[1,2-<i>b</i>]fluorene which can be synthesized via mildly air-sensitive techniques and the end products handled readily under atmosphereic conditions. Through transmetallation via diarylzinc reagents a series of derivatives were sythesized which show broad absorption profiles that highlight the versatility of this backbone to be used in organic solar cell devices. These compounds can be synthesized in large yields, in alow number of steps and functionalized at many stages along the way providing a large depth of possibilities. Exploratory device paramaters were studied and show PCE of 2%.

All-Contactless Measurement of Series Resistance Distributions on Solar Cells with Photoluminescence Imaging

2011 ◽  
Author(s):  
M. Kasemann ◽  
L.M. Reindl ◽  
B. Michl ◽  
W. Warta ◽  
A. Schütt ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Current Flow ◽  
Series Resistance ◽  
Electrical Contacts ◽  
New Method ◽  
Contactless Measurement ◽  
Sample Handling ◽  
Imaging Methods ◽  
Lateral Current

Abstract Conventional series resistance imaging methods require electrical contacts for current injection or extraction in order to generate lateral current flow in the solar cell. This paper presents a new method to generate lateral current flow in the solar cell without any electrical contacts. This reduces the sample handling complexity for inline application and allows for measurements on unfinished solar cell precursors.

scholarly journals Ultrathin and compact electron transport layer made from novel water-dispersed Fe3O4 nanoparticles to accomplish UV-stable perovskite solar cells

2021 ◽  
Author(s):  
Song Fang ◽  
Bo Chen ◽  
Bangkai Gu ◽  
Linxing Meng ◽  
Hao Lu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Electron Transport ◽  
Perovskite Solar Cells ◽  
Perovskite Solar Cell ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Perovskite Material ◽  
Main Factors ◽  
Induced Decomposition

UV induced decomposition of perovskite material is one of main factors to severely destroy perovskite solar cells for instability. Here we report a UV stable perovskite solar cell with a...

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