Uniformity of Arsenic Dimer and Tetramer Fluxes from a Valved Arsenic Cracking Source in MBE

1995 ◽  
Vol 378 ◽  
Author(s):  
George A. Patterson ◽  
James S.C. Chang ◽  
Forrest G. Kellert
Keyword(s):  
Standard Deviation ◽  
Room Temperature ◽  
Flux Distribution ◽  
High Crystalline Quality ◽  
Lattice Match ◽  
X Ray ◽  
Sapphire Substrates ◽  
Case Characteristics ◽  
Substrate Temperatures

AbstractWe have studied the uniformity of the arsenic flux from a commercially available valved arsenic cracker source for MBE. There are many epitaxial structures that require a uniform arsenic flux distribution for rotated epitaxial growth and, in the non-rotated case, for RHEED. For non-stoichiometric GaAs growth at low substrate temperatures, which results in arsenic precipitates being formed during the in-situ anneal process, a specific As/Ga ratio must be used to maintain high crystalline quality and to achieve the desired electrical properties. Also, in the growth of InGaAsP the As/P ratio is equally important for lattice match and quality device results. We report on the uniformity of amorphous arsenic (a-As) films condensed on the surface of 3" diameter sapphire wafers slightly below room temperature. Sapphire substrates were used in place of GaAs wafers to facilitate the use of x-ray fluorescence for the measurement of the arsenic film uniformity. Uniformity maps will be presented for rotated and non-rotated a-As depositions of As2 and As4. Results indicate the uniformity of a-As, As4, films to have a standard deviation of < 2.5% across a 3" diameter substrate for the rotated case. Characteristics of the non-rotated case will be presented.

scholarly journals Characterization of Ti/SnO2 Interface by X-ray Photoelectron Spectroscopy

Nanomaterials ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 202
Author(s):  
Miranda Martinez ◽  
Anil R. Chourasia
Keyword(s):  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Chemical Interaction ◽  
Photoelectron Spectra ◽  
X Ray ◽  
Increasing Trend ◽  
Substrate Temperatures ◽  
Beam Technique

The Ti/SnO2 interface has been investigated in situ via the technique of x-ray photoelectron spectroscopy. Thin films (in the range from 0.3 to 1.1 nm) of titanium were deposited on SnO2 substrates via the e-beam technique. The deposition was carried out at two different substrate temperatures, namely room temperature and 200 °C. The photoelectron spectra of tin and titanium in the samples were found to exhibit significant differences upon comparison with the corresponding elemental and the oxide spectra. These changes result from chemical interaction between SnO2 and the titanium overlayer at the interface. The SnO2 was observed to be reduced to elemental tin while the titanium overlayer was observed to become oxidized. Complete reduction of SnO2 to elemental tin did not occur even for the lowest thickness of the titanium overlayer. The interfaces in both the types of the samples were observed to consist of elemental Sn, SnO2, elemental titanium, TiO2, and Ti-suboxide. The relative percentages of the constituents at the interface have been estimated by curve fitting the spectral data with the corresponding elemental and the oxide spectra. In the 200 °C samples, thermal diffusion of the titanium overlayer was observed. This resulted in the complete oxidation of the titanium overlayer to TiO2 upto a thickness of 0.9 nm of the overlayer. Elemental titanium resulting from the unreacted overlayer was observed to be more in the room temperature samples. The room temperature samples showed variation around 20% for the Ti-suboxide while an increasing trend was observed in the 200 °C samples.

Ge δ-Layers on Si(111) and Si(001) Grown by MBE and SPE

1994 ◽  
Vol 375 ◽  
Author(s):  
J. Falta ◽  
T. Gog ◽  
G. Materlik ◽  
B. H. Müjller ◽  
M. Horn-Von Hoegen
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Solid Phase ◽  
Standing Waves ◽  
Solid Phase Epitaxy ◽  
High Crystalline Quality ◽  
X Ray ◽  
High Annealing

AbstractGe δ-layers on Si(111) and Si(001), grown by molecular beam epitaxy (MBE) and solid phase epitaxy (SPE) were characterized in-situ by high-resolution low-energy electrondiffraction and post-growth by x-ray standing waves. LEED intensity oscillations are used to determine the growth mode of Ge on Si which is found to proceed in a double bilayer fashion for Ge on Si(111). X-ray standing waves are employed to investigate crystal quality of the Ge layer. SPE on Si(111) requires high annealing temperatures (600°C) for sufficient recrystallization of defects in the Ge δ-layer. On Si(001), Ge δ-layers of surprisingly high crystalline quality are grown by solid phase epitaxy at room temperature.

Single Crystal Growth of High-Pressure Phases of Ice and Salt Hydrate Far Below the Original Melting Point by Mixing Alcohol: Crystal Structure Determination of Magnesium Chloride Heptahydrate

2020 ◽  
Author(s):  
Keishiro Yamashita ◽  
Kazuki Komatsu ◽  
Hiroyuki Kagi
Keyword(s):  
Crystal Structure ◽  
High Pressure ◽  
Crystal Growth ◽  
Single Crystal ◽  
Room Temperature ◽  
Growth Technique ◽  
Salt Hydrate ◽  
X Ray

An crystal-growth technique for single crystal x-ray structure analysis of high-pressure forms of hydrogen-bonded crystals is proposed. We used alcohol mixture (methanol: ethanol = 4:1 in volumetric ratio), which is a widely used pressure transmitting medium, inhibiting the nucleation and growth of unwanted crystals. In this paper, two kinds of single crystals which have not been obtained using a conventional experimental technique were obtained using this technique: ice VI at 1.99 GPa and MgCl<sub>2</sub>·7H<sub>2</sub>O at 2.50 GPa at room temperature. Here we first report the crystal structure of MgCl2·7H2O. This technique simultaneously meets the requirement of hydrostaticity for high-pressure experiments and has feasibility for further in-situ measurements.

Photoluminescence Enhancement of CdS Nanocrystals Fabricated on Dithiocarbamate Functionalized PET Substrates

2012 ◽  
Vol 512-515 ◽  
pp. 1511-1515
Author(s):  
Chun Lin Zhao ◽  
Li Xing ◽  
Xiao Hong Liang ◽  
Jun Hui Xiang ◽  
Fu Shi Zhang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Hexagonal Structure ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Visible Absorption ◽  
X Ray ◽  
Cds Nanocrystals ◽  
Morphological Studies ◽  
Transmission Electron

Cadmium sulfide (CdS) nanocrystals (NCs) were self-assembled and in-situ immobilized on the dithiocarbamate (DTCs)-functionalized polyethylene glycol terephthalate (PET) substrates between the organic (carbon disulfide diffused in n-hexane) –aqueous (ethylenediamine and Cd2+ dissolved in water) interface at room temperature. Powder X-ray diffraction measurement revealed the hexagonal structure of CdS nanocrystals. Morphological studies performed by scanning electron microscopy (SEM) and high-resolution transmission electron microscope (HRTEM) showed the island-like structure of CdS nanocrystals on PET substrates, as well as energy-dispersive X-ray spectroscopy (EDS) confirmed the stoichiometries of CdS nanocrystals. The optical properties of DTCs modified CdS nanocrystals were thoroughly investigated by ultraviolet-visible absorption spectroscopy (UV-vis) and fluorescence spectroscopy. The as-prepared DTCs present intrinsic hydrophobicity and strong affinity for CdS nanocrystals.

In Situ Synchrotron X-Ray Diffraction Study of a Deformed Cu-Fe-P Alloy during Heating

2016 ◽  
Vol 850 ◽  
pp. 191-196 ◽  
Author(s):  
Wei Wang ◽  
Cun Lei Zou ◽  
Ren Geng Li ◽  
Wen Wen ◽  
Hui Jun Kang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Lattice Distortion ◽  
Copper Matrix ◽  
Heating Process ◽  
Recrystallization Process ◽  
Full Width ◽  
X Ray Diffraction ◽  
Dramatic Decrease ◽  
X Ray

In situ synchrotron X-ray diffraction was used to study a deformed Cu-0.88 Fe-0.24 P alloy during heating process. The measurements were performed at room temperature and also at high temperatures up to 893 K in order to determine the recovery, ageing and recrystallization process. With the increase of temperature, the angles of copper matrix peaks moved left and the FWHM (full width at half maximum) decreased slightly. Fe3P precipitates were first detected at 533 K, reached the maximum at 673 K, and re-dissolved into matrix at 853 K. A dramatic decrease in FWHM was observed accompanied by the precipitation of Fe3P phases, indicating the reduction of lattice distortion of copper matrix.

scholarly journals Insertion of Phosphenium Ions into a Bicyclo[1.1.0]Tetraphosphabutane Iron Complex

Molecules ◽  
2021 ◽  
Vol 26 (13) ◽  
pp. 3920
Author(s):  
Martin Weber ◽  
Gábor Balázs ◽  
Alexander V. Virovets ◽  
Eugenia Peresypkina ◽  
Manfred Scheer
Keyword(s):  
Diffraction Analysis ◽  
Room Temperature ◽  
31P Nmr ◽  
Spectroscopic Studies ◽  
Iron Complex ◽  
The Novel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Phosphenium Ions

By reacting [{Cp‴Fe(CO)2}2(µ,η1:1-P4)] (1) with in situ generated phosphenium ions [Ph2P][A] ([A]− = [OTf]− = [O3SCF3]−, [PF6]−), a mixture of two main products of the composition [{Cp‴Fe(CO)2}2(µ,η1:1-P5(C6H5)2)][PF6] (2a and 3a) could be identified by extensive 31P NMR spectroscopic studies at 193 K. Compound 3a was also characterized by X-ray diffraction analysis, showing the rarely observed bicyclo[2.1.0]pentaphosphapentane unit. At room temperature, the novel compound [{Cp‴Fe}(µ,η4:1-P5Ph2){Cp‴(CO)2Fe}][PF6] (4) is formed by decarbonylation. Reacting 1 with in situ generated diphenyl arsenium ions gives short-lived intermediates at 193 K which disproportionate at room temperature into tetraphenyldiarsine and [{Cp‴Fe(CO)2}4(µ4,η1:1:1:1-P8)][OTf]2 (5) containing a tetracyclo[3.3.0.02,7.03,6]octaphosphaoctane ligand.

Investigation of Magnetic Order in Iron Oxide-Nickel Oxide Superlattices with Modulation Wavelength Less Than 80 Å

1991 ◽  
Vol 231 ◽  
Author(s):  
S. D. Berry ◽  
D. M. Lind ◽  
G. Chern ◽  
H. Mathias ◽  
L. R. Testardi
Keyword(s):  
Magnetic Order ◽  
Spontaneous Magnetization ◽  
X Ray Diffraction ◽  
High Crystalline Quality ◽  
X Ray ◽  
Long Wavelength ◽  
Saturation Moment ◽  
Very High ◽  
Modulation Wavelength

AbstractWe have investigated the magnetic order, using SQUID magnetometry, for short modulation wavelength Fe3O4/NiO superlattices, grown on single crystal MgO. Ferrimagnetic Fe3O4 has a saturation moment of ~500 emu/cm3 at 0 K and a Curie temperature of 858 K, while bulk NiO is antiferromagnetic with a NMel temperature of 525 K. Very high crystalline quality with little interdiffusion is indicated by X-ray diffraction, SEM, optical microscopy, and in-situ RHEED, and the samples show highly anisotropic electrical conductivity which also indicates the strong modulation present. Long wavelength samples (Amod > 200 Å) have a behavior only slightly different from that expected from bulk Fe3O4, but for Amod<80 Å, spontaneous magnetization is replaced by paramagnetism, with weak temperature dependence (not I/T) from 5 K to 400 K.

Carbonate-cancrinite: In-situ real-time thermal processes studied by means of energy-dispersive X-ray powder-diffractometry

1995 ◽  
Vol 10 (3) ◽  
pp. 173-177 ◽  
Author(s):  
P. Ballirano ◽  
A. Maras ◽  
R. Caminiti ◽  
C. Sadun
Keyword(s):  
Real Time ◽  
Room Temperature ◽  
Rietveld Analysis ◽  
Molecular Water ◽  
Heating Process ◽  
Thermal Processes ◽  
X Ray ◽  
Reversible Phase Transition ◽  
Reversible Phase

New powder X-ray data for cancrinite [ideally Na8Si6Al6O24 (CO3)2·2 H2O] are reported along with in-situ real-time thermal processes recorded using energy dispersive X-ray diffractometry (EDXD). A completely anhydrous phase is obtained after heating the sample up to 600 °C and quickly cooling it to room temperature, as shown by means of both Rietveld analysis and IR spectroscopy. The anhydrous phase does not show any tendency to re-acquire molecular water. During the heating process, at around 450 °C, a peak splitting is observed, possibly due to a reversible phase transition.

Magnetoresistance and Structure of Granular Co/Ag Thin Films

1993 ◽  
Vol 313 ◽  
Author(s):  
Mary Beth Stearns ◽  
Yuanda Cheng
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Room Temperature ◽  
Magnetization Measurements ◽  
X Ray ◽  
Conduction Electrons ◽  
Low Field ◽  
Co Concentration ◽  
Microscopy Techniques ◽  
Substrate Temperatures

ABSTRACTSeveral series of CoxAg1-x granular thin films (-3000Å) were fabricated by coevapora-tion of Co and Ag in a dual e-beam UHV deposition system at varying substrate temperatures. These films have low field magnetoresistance values as large as 31% at room temperature and 65% at liquid N2 temperature. The structure of the films was determined using magnetization measurements as well as x-ray and various electron microscopy techniques. The composition was determined using Rutherford backscattering spectroscopy. The Magnetoresistance was measured at both room and liquid N2 temperatures.We deduce from the magnetization and RBS Measurements that the films consist of Co globules embedded in a Ag Matrix and that there is no appreciable mixing of the Co and Ag atoms in the films deposited at substrate temperatures ≥ 400°K. The size of the Co globules is seen to increase with increasing Co concentration and the maximum magnetoresistance occurs in those films having the smallest Ag thickness which provides magnetic isolation of the Co globules.We suggest that the large magnetoresistance of these films arises from the same mechanism which causes the low field magnetoresistance in pure ferromagnets, namely, the scattering of the highly polarized d conduction electrons of the Co at magnetic boundaries. The large increase in the room temperature magnetoresistance of the CO/Ag films as compared to those of pure 3d ferromagnetic films is due to the distance between the magnetic boundaries being reduced to a few nanometers, because of the small size of the single domain Co globules, as compared to a few microns in 3d ferromagnets.

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