Numerical Simulation of Point Defect Distributions in a Growing Czochralski Silicon Crystal in Response to an Abrupt Change in the Growth Conditions

1995 ◽  
Vol 378 ◽  
Author(s):  
W. Wijaranakula ◽  
Q. S. Zhang ◽  
K. Takano ◽  
H. Yamagishi
Keyword(s):  
Numerical Simulation ◽  
Growth Rate ◽  
Crystal Growth ◽  
Point Defect ◽  
Flow Pattern ◽  
Abrupt Change ◽  
Silicon Crystal ◽  
Crystal Growth Rate ◽  
Rate Theory ◽  
Czochralski Silicon

AbstractNumerical simulation of point defect distributions in a growing Czochralski silicon crystal with an abrupt change in the crystal growth rate from 1.0 to 0.4 mm/min was performed. The result was fitted to the experimental data for the flow pattern defects obtained from a crystal grown under simulated conditions. From the simulation result, it was observed that the axial temperature distribution shifts slightly upwards as a result of the growth rate reduction. Based upon the argument that the flow pattern defects are of vacancy-type, it is proposed that the generation rate of the flow pattern defects during crystal growth can be described by the classical nucleation rate theory proposed by Becker [Proc.Phys.Soc., 52, 71(1940)]. In addition, it is suggested that the vacancy concentration in the flow pattern defects depends upon the reaction time between the silicon interstitials and the flow pattern defects and thus the crystal growth rate.

Experiment and numerical simulation of melt convection and oxygen distribution in 400-mm Czochralski silicon crystal growth

Rare Metals ◽  
2017 ◽  
Vol 36 (2) ◽  
pp. 134-141 ◽  
Author(s):  
Ran Teng ◽  
Yang Li ◽  
Bin Cui ◽  
Qing Chang ◽  
Qing-Hua Xiao ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Crystal Growth ◽  
Silicon Crystal ◽  
Oxygen Distribution ◽  
Czochralski Silicon ◽  
Melt Convection

Numerical Simulation of 300mm CZ Silicon Crystal Growth with Axial Magnetic Fields

2011 ◽  
Vol 689 ◽  
pp. 179-183
Author(s):  
Wen Ting Xu ◽  
Hai Ling Tu ◽  
Qing Chang ◽  
Qing Hua Xiao ◽  
Xiao Lin Dai ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Numerical Simulation ◽  
Growth Rate ◽  
Crystal Growth ◽  
Magnetic Fields ◽  
Growth Rates ◽  
Axial Magnetic Field ◽  
Silicon Crystal ◽  
Crystal Interfaces ◽  
Hot Zone

We studied the optimization of 300mm CZ silicon crystal growth in 28 inch hot zone with axial magnetic field. The convex of melt-crystal interfaces toward to the crystal are observed in our simulations under different growth velocities (0.3mm/min, 0.5mm/min and 0.65mm/min). The convections in melt were illustrated under different growth rates and intensities of magnetic field. The growth rate of 0.5mm/min and axial magnetic fields intensity of 0.3T were recommended as an appropriate control condition.

Quantitative Analysis of Microsegregation in the Faceted and Non-Faceted Czochralski Silicon Crystal Growth

1980 ◽  
Vol 35 (1) ◽  
pp. 80-84 ◽  
Author(s):  
K. M. Kim
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Quantitative Analysis ◽  
Segregation Analysis ◽  
Dopant Concentration ◽  
Silicon Crystal ◽  
The Other ◽  
Spreading Resistance ◽  
Czochralski Silicon ◽  
Other Hand

Abstract The microsegregation behaviour of antimony in the faceted and non-faceted Czochralski silicon crystal growth was analyzed quantitatively. Using small melt heights and no rotation, dopant striations of various small spacings were eliminated. Interface demarcation and spreading resistance measurements were used for the segregation analysis. The dopant concentration and its fluctuation during the faceted growth were both higher than during non-faceted growth. On the other hand, fluctuations of the microscopic growth rate were about the same in magnitude and periodicity in the two growth regions.

Morphology and development of flow-pattern defect with extended nonagitated Secco etching

1994 ◽  
Vol 52 ◽  
pp. 868-869
Author(s):  
Y. Pan
Keyword(s):  
Flow Pattern ◽  
Silicon Crystal ◽  
Gate Oxide ◽  
Crystal Growth Rate ◽  
Etch Depth ◽  
Force Microscopy ◽  
Etch Pit ◽  
Float Zone ◽  
Atomic Force ◽  
Multiple Step

The D defect, which causes the degradation of gate oxide integrities (GOI), can be revealed by Secco etching as flow pattern defect (FPD) in both float zone (FZ) and Czochralski (Cz) silicon crystal or as crystal originated particles (COP) by a multiple-step SC-1 cleaning process. By decreasing the crystal growth rate or high temperature annealing, the FPD density can be reduced, while the D defectsize increased. During the etching, the FPD surface density and etch pit size (FPD #1) increased withthe etch depth, while the wedge shaped contours do not change their positions and curvatures (FIG.l).In this paper, with atomic force microscopy (AFM), a simple model for FPD morphology by non-crystallographic preferential etching, such as Secco etching, was established.One sample wafer (FPD #2) was Secco etched with surface removed by 4 μm (FIG.2). The cross section view shows the FPD has a circular saucer pit and the wedge contours are actually the side surfaces of a terrace structure with very small slopes. Note that the scale in z direction is purposely enhanced in the AFM images. The pit dimensions are listed in TABLE 1.

TEMPERATURE DEPENDENCE OF THE CRYSTAL GROWTH RATE IN POLAR GLACIERS

1987 ◽  
Vol 48 (C1) ◽  
pp. C1-661-C1-662 ◽  
Author(s):  
J. R. PETIT ◽  
P. DUVAL ◽  
C. LORIUS
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Temperature Dependence ◽  
Crystal Growth Rate
Sign in / Sign up

Export Citation Format

Share Document