Enhancement of Crystallinity with Fluorinated Amorphous Silicon (a-Si:H;F) Film by XeCl Excimer Laser Annealing

1995 ◽  
Vol 377 ◽  
Author(s):  
H. S. Choi ◽  
K. H. Jang ◽  
K. B. Kim ◽  
M. K. Han
Keyword(s):  
Amorphous Silicon ◽  
Laser Annealing ◽  
Solid Phase ◽  
Defect States ◽  
Hydrogen Atoms ◽  
Excimer Laser Annealing ◽  
Weak Hydrogen Bonds ◽  
Solid Phase Transition ◽  
Hydrogenated Amorphous ◽  
Induced Crystallization

ABSTRACTThe Effects of fluorine atoms on laser-induced crystallization have been studied. The defect states of hydrogenated amorphous silicon (a-Si:H) film, which are related to weak hydrogen bonds, were reduced by involving fluorine atoms, before laser annealing. In laser annealing, the crystallinity was also enhanced to 63 %, while that of a-Si:H was 45 % at the energy density of 300 mJ/cm2. It may be considered that the fluorine atoms reduce the hydrogen atoms cause to the degradation of film in laser annealing, and increase the heat capacity which results in promotion of crystallinity in melt-solid phase transition.

Directional Field Aided Lateral Crystallization of Amorphous Silicon Thin Films

2001 ◽  
Vol 664 ◽  
Author(s):  
Marek A. T. Izmajlowicz ◽  
Neil A. Morrison ◽  
Andrew J. Flewitt ◽  
William I. Milne
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Electric Field ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Excimer Laser Annealing ◽  
Solid Phase Crystallization ◽  
Metal Induced Crystallization ◽  
Silicon Thin Films ◽  
Induced Crystallization

ABSTRACTFor application to active matrix liquid crystal displays (AMLCDs), a low temperature (< 600 °C) process for the production of polycrystalline silicon is required to permit the use of inexpensive glass substrates. This would allow the integration of drive electronics onto the display panel. Current low temperature processes include excimer laser annealing, which requires expensive equipment, and solid phase crystallization, which requires high temperatures. It is known that by adding small amounts of metals such as nickel to the amorphous silicon the solid phase crystallization temperature can be significantly reduced. The rate of this solid phase metal induced crystallization is increased in the presence of an electric field. Previous work on field aided crystallization has reported crystal growth that either proceeds towards the positive terminal or is independent of the direction of the electric field. In this work, extensive investigation has consistently revealed directional crystallization, from the positive to the negative terminal, of amorphous silicon thin films during heat treatment in the presence of an electric field. This is the first time that this phenomenon has been reported. Models have been proposed for metal induced crystallization with and without an applied electric field in which a reaction between Ni and Si to produce NiSi is the rate-limiting step. The crystallization rate is increased in the presence of an electric field through the drift of positive Ni ions.

Lateral Solid-Phase Recrystallization from the Crystal Seed Selectively Formed by Excimer Laser Annealing in Ge-Ion-Implanted Amorphous Silicon Films

2000 ◽  
Vol 39 (Part 1, No. 9A) ◽  
pp. 5063-5068 ◽  
Author(s):  
Jin-Wook Seo ◽  
Satoru Akiyama ◽  
Yoichiro Aya ◽  
Tomoyuki Nohda ◽  
Hiroki Hamada ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Solid Phase ◽  
Silicon Films ◽  
Excimer Laser Annealing ◽  
Phase Recrystallization ◽  
Crystal Seed ◽  
Ion Implanted

Dynamics of the excimer laser annealing of hydrogenated amorphous silicon thin films

1999 ◽  
Vol 75 (4) ◽  
pp. 498-500 ◽  
Author(s):  
G. Ivlev ◽  
E. Gatskevich ◽  
V. Cháb ◽  
J. Stuchlı́k ◽  
V. Vorlı́ček ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Hydrogenated Amorphous Silicon ◽  
Excimer Laser Annealing ◽  
Silicon Thin Films ◽  
Hydrogenated Amorphous

Vacuum-enhanced nickel-induced crystallization of hydrogenated amorphous silicon

2012 ◽  
Vol 112 (7) ◽  
pp. 073506 ◽  
Author(s):  
N. Budini ◽  
P. A. Rinaldi ◽  
R. D. Arce ◽  
J. A. Schmidt ◽  
R. R. Koropecki ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous ◽  
Induced Crystallization

Hydrogenated Amorphous Silicon Nitride: Structural and Electronic Properties

1998 ◽  
Vol 538 ◽  
Author(s):  
J. F. Justo ◽  
F. De Brito Mota ◽  
A. Fazziom
Keyword(s):  
Silicon Nitride ◽  
Ab Initio ◽  
Amorphous Silicon ◽  
Electronic Properties ◽  
Interatomic Potential ◽  
Hydrogen Atoms ◽  
Hydrogen Incorporation ◽  
Amorphous Silicon Nitride ◽  
Structural And Electronic Properties ◽  
Hydrogenated Amorphous

AbstractWe combined empirical and ab initio methods to study structural and electronic properties of amorphous silicon nitride. For such study, we developed an interatomic potential to describe the interactions between silicon, nitrogen, and hydrogen atoms. Using this potential, we performed Monte Carlo simulations in a simulated annealing scheme to study structural properties of amorphous silicon nitride. Then this potential was used to generate relevant structures of a-SiNx:Hy which were input configurations to ab initio calculations. We investigated the electronic and structural role played by hydrogen incorporation in amorphous silicon nitride.

Enhancement of On/Off Current Ratio of Poly-Silicon TFT by Selective Laser-Induced Crystallization of Active Layer

1997 ◽  
Vol 471 ◽  
Author(s):  
Jae-Hong Jeon ◽  
Cheol-Min Park ◽  
Hong-Seok Choi ◽  
Cheon-Hong Kim ◽  
Min-Koo Han
Keyword(s):  
Leakage Current ◽  
Excimer Laser ◽  
Active Layer ◽  
Laser Annealing ◽  
Wave Length ◽  
Excimer Laser Annealing ◽  
Current Ratio ◽  
Ito Film ◽  
Conduction Channel ◽  
Induced Crystallization

ABSTRACTWe have proposed the new poly-Si TFT which reduces the leakage current effectively by employing highly resistive a-Si region in the channel. The active layer of proposed device is crystallized selectively by employing excimer laser annealing while the both sides of channel near the source/drain are not recrystallized and remained as a-Si. Unlikely LDD or offset structure, the a-Si region which is designed to reduce the leakage current acts as the conduction channel of carriers under the ON state, so that the ON current is decreased very little. The selectively crystallized active layer can be fabricated by irradiating the excimer laser through ITO film of which transmittance at the wave length of laser is selectively adjusted. In the course of fabricating the proposed device, any additional photo masking step is not necessary and misalign problem is eliminated. The experimental results show that the ON/OFF current ratio of proposed poly-Si TFT is 106 while that of conventional one is 105.

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