Fabrication of a Single Crystal Silicon Substrate for AM-LCD Using Vertical Etching of (110) Silicon

1995 ◽  
Vol 377 ◽  
Author(s):  
Jun-Bo Yoon ◽  
Ho-Jun Lee ◽  
Chul-Hi Han ◽  
Choong-Ki Kim
Keyword(s):  
Silicon Substrate ◽  
Crystalline Silicon ◽  
Single Crystal Silicon ◽  
Liquid Crystal Displays ◽  
Ring Oscillator ◽  
Si Substrate ◽  
Crystal Silicon ◽  
Active Matrix ◽  
Single Crystal Silicon Substrate ◽  
Matrix Liquid

ABSTRACTIn this paper, feasibility of crystalline silicon (c-Si) substrate for transmissive active matrix liquid crystal displays (AM-LCDs) has been investigated. The transparent pixel areas of AM-LCD were formed by vertical etching of (110) silicon substrate using anisotropie etching property of aqueous KOH. Combining this vertical etching process with the conventional MOSFET fabrication process, the pixel switching devices, peripheral circuits and transparent apertures were successfully integrated on the same c-Si substrate. The pixel NMOS devices exhibit an electron mobility of about 600cm2/V-s, a subthreshold slope of 65mV/decade and ON/OFF current ratio of 9 decades at 5V drain voltage. And the gate delay time is 3.3ns at 10V power voltage, measured from a ring oscillator which has enhancement-load type NMOS inverters having the (W/L) iload- (W/L) driverer of 25μm/15μm - 50μm/10μm.

scholarly journals Влияние буферного слоя por-Si  на оптические свойства эпитаксиальных гетероструктур In-=SUB=-x-=/SUB=-Ga-=SUB=-1-x-=/SUB=-N/Si(111) с наноколончатой морфологией пленки

2019 ◽  
Vol 53 (1) ◽  
pp. 70
Author(s):  
П.В. Середин ◽  
Д.Л. Голощапов ◽  
Д.С. Золотухин ◽  
А.С. Леньшин ◽  
А.Н. Лукин ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Emission Intensity ◽  
Molecular Beam ◽  
Single Crystal Silicon ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Crystal Silicon ◽  
X Ray ◽  
Plasma Activation ◽  
Single Crystal Silicon Substrate

AbstractIntegrated heterostructures exhibiting a nanocolumnar morphology of the In_ x Ga_1 –_ x N film are grown on a single-crystal silicon substrate ( c -Si(111)) and a substrate with a nanoporous buffer sublayer ( por -Si) by molecular-beam epitaxy with the plasma activation of nitrogen. Using a complex of spectroscopic methods of analysis, it is shown that the growth of In_ x Ga_1 –_ x N nanocolumns on the por -Si buffer layer offer a number of advantages over growth on the c -Si substrate. Raman and ultraviolet spectroscopy data support the inference about the growth of a nanocolumn structure and agree with the previously obtained X-ray diffraction (XRD) data indicative of the strained, unrelaxed state of the In_ x Ga_1 –_ x N layer. The growth of In_ x Ga_1 –_ x N nanocolumns on the por -Si layer positively influences the optical properties of the heterostructures. At the same half-width of the emission line in the photoluminescence spectrum, the emission intensity for the heterostructure sample grown on the por -Si buffer layer is ~25% higher than the emission intensity for the film grown on the c -Si substrate.

scholarly journals Communication—Electrodeposition of Indium Directly on Silicon

2022 ◽  
Author(s):  
Anica Neumann ◽  
Olivia Schneble ◽  
Emily Warren
Keyword(s):  
Single Crystal ◽  
Silicon Substrate ◽  
Low Temperatures ◽  
Seed Layer ◽  
Direct Contact ◽  
Single Crystal Silicon ◽  
Vapor Liquid Solid ◽  
Crystal Silicon ◽  
Single Crystal Silicon Substrate ◽  
Direct Electrodeposition

Abstract Direct electrodeposition of indium onto silicon paves the way for advances in microelectronics, photovoltaics, and optoelectronics. Indium is generally electrodeposited onto silicon utilizing a physically or thermally deposited metallic seed layer. Eliminating this layer poses benefits in microelectronics by reducing resistive interfaces and in vapor-liquid-solid conversion to III-V material by allowing direct contact to the single-crystal silicon substrate for epitaxial conversion. We investigated conditions to directly electrodeposit indium onto n-type Si(100). We show that a two-step galvanostatic plating at low temperatures can consistently produce smooth, continuous films of indium over large areas, in bump morphologies, and conformally into inverted pyramids.

Measurement of the native oxide thickness on a reference relief pitch structure on a single-crystal silicon substrate

2013 ◽  
Vol 42 (2) ◽  
pp. 99-101
Author(s):  
V. P. Gavrilenko ◽  
A. A. Kuzin ◽  
A. Yu. Kuzin ◽  
A. A. Kuz’min ◽  
V. B. Mityukhlyaev ◽  
...  
Keyword(s):  
Single Crystal ◽  
Silicon Substrate ◽  
Single Crystal Silicon ◽  
Oxide Thickness ◽  
Native Oxide ◽  
Crystal Silicon ◽  
Pitch Structure ◽  
Single Crystal Silicon Substrate

Single crystal silicon substrate for magnetic rigid disk

1994 ◽  
pp. 911-914
Author(s):  
Hideo Kaneko ◽  
Katushi Tokunaga ◽  
Yoshio Tawara ◽  
Noboru Tamai ◽  
Toyofumi Aoki ◽  
...  
Keyword(s):  
Single Crystal ◽  
Silicon Substrate ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Rigid Disk ◽  
Single Crystal Silicon Substrate
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