In Situ Investigation of the Palladium Silicon Reaction

1984 ◽  
Vol 37 ◽  
Author(s):  
D. A. Smith ◽  
P. A. Psaras ◽  
I. J. Fishert ◽  
K. N. Tu
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Volume Changes ◽  
Cross Sectional ◽  
Compound Formation ◽  
Transmission Electron ◽  
In Situ Investigation ◽  
Hillock Formation ◽  
Elastic Strains

AbstractPalladium has been deposited on {1001 and t1111 oriented silicon wafers and also on polysilicon. Cross-sectional specimens for transmission electron microscopy were prepared and heated in-situ. The interfaces between silicide and silicon were rough and the volume changes accompanying heating and compound formation caused elastic strains in the substrates and in one case hillock formation in the products.

Reactions in Metal-Metalloid Multilayers

1993 ◽  
Vol 311 ◽  
Author(s):  
Robert Sinclair ◽  
Toyohiko J. Konno
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Differential Scanning Calorimetry ◽  
Reactive Systems ◽  
Nucleation And Growth ◽  
In Situ Observation ◽  
Scanning Calorimetry ◽  
Compound Formation ◽  
Transmission Electron

ABSTRACTWe have studied the reactions at metal-metalloid interfaces using high resolution transmission electron microscopy, including in situ observation, and differential scanning calorimetry. There is contrasting behavior depending on the affinity for interaction or segregation. For reactive systems, compound formation ultimately results, but this can be preceded by solidstate amorphization. For non-reactive systems, crystallization of the metalloid is often achieved with nucleation and growth mediated by the metal phase.

High-temperature in situ Cross-sectional Transmission Electron Microscopy Investigation of Crystallization Process of Yttrium-stabilized Zirconia/Si and Yttrium-stabilized Zirconia/SiOx/Si Thin Films

2005 ◽  
Vol 20 (7) ◽  
pp. 1878-1887 ◽  
Author(s):  
Takanori Kiguchi ◽  
Naoki Wakiya ◽  
Kazuo Shinozaki ◽  
Nobuyasu Mizutani
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Crystallization Process ◽  
Stabilized Zirconia ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron ◽  
Tem Method

The crystallization process of yttria-stabilized zirconia (YSZ) gate dielectrics deposited on p-Si (001) and SiOx/p-Si(001) substrates and the growth process of SiOx has been investigated directly using high-temperature in situ cross-sectional view transmission electron microscopy (TEM) method and high-temperature plan-view in-situ TEM method. The YSZ layer is crystallized by the nucleation and growth mechanism at temperatures greater than 573 K. Nucleation originates from the film surface. Nucleation occurs randomly in the YSZ layer. Subsequently, the crystallized YSZ area strains the Si surface. Finally, it grows in the in-plane direction with the strain, whereas, if a SiOx layer of 1.4 nm exists, it absorbs the crystallization strain. Thereby, an ultrathin SiOx layer can relax the strain generated in the Si substrate in thin film crystallization process.

In situ and ex situ transmission electron microscopy investigation of Cu–Al–Cu–Ti reactive metallic multilayer coatings

2010 ◽  
Vol 25 (6) ◽  
pp. 1196-1203 ◽  
Author(s):  
M.A. Mat Yajid ◽  
H. Bagshaw ◽  
G. Möbus
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ex Situ ◽  
Alloy Formation ◽  
Cross Sectional ◽  
Multilayer Systems ◽  
Transmission Electron ◽  
Reactive Sample ◽  
In Situ Heating

Metallic multilayers of Cu/Al/Ti composition were studied by transmission electron microscopy (TEM) and plasmon energy-loss mapping as prototypes of nanoscale reactive multilayer systems with exothermic alloy formation in oxygen-free conditions. The selection and arrangement of alloy phases by the system during ex situ and in situ heating experiments were found to depend not only on temperature but strongly on the initial volume ratios of metals, and to a lesser degree on the dimensionality of the reactive sample. Here, a two-dimensional sample was represented by ex situ heating of the full multilayer structure, a one-dimensional sample refers to in situ heating of thin cross-sectional TEM specimens, while a zero-dimensional sample (or metallic dot-array) was obtained after cutting thin pillars using focused ion beams. Lamellar self-organized alternation between Heusler phase and Cu9Al4 was found.

scholarly journals Straining mechanisms in aluminium alloy 6056. In-situ investigation by transmission electron microscopy

2003 ◽  
Vol 340 (1-2) ◽  
pp. 286-291 ◽  
Author(s):  
François Delmas ◽  
Marie Vivas ◽  
Philippe Lours ◽  
Marie-José Casanove ◽  
Alain Couret ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Aluminium Alloy ◽  
Transmission Electron ◽  
In Situ Investigation

In situ transmission electron microscopy investigation of threading dislocation motion in passivated thin aluminum films

1999 ◽  
Vol 14 (12) ◽  
pp. 4673-4676 ◽  
Author(s):  
R-M. Keller-Flaig ◽  
M. Legros ◽  
W. Sigle ◽  
A. Gouldstone ◽  
K. J. Hemker ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Dislocation Motion ◽  
Aluminum Film ◽  
Threading Dislocation ◽  
Cross Sectional ◽  
Aluminum Films ◽  
Transmission Electron ◽  
Microscopy Investigation

In situ transmission electron microscopy (TEM) was performed to study dislocation motion during temperature cycles in aluminum films passivated with a SiO2 layer. The films were cycled from room temperature to 450 °C. Wedge-haped cross-sectional TEM samples were used to retain the constraint of the Si substrate. Besides interactions between dislocations and interfaces, the movement of threading dislocations within the constrained aluminum film was observed. This observation provides an experimental corroboration of the occurrence of threading dislocation motion, which is the basis for rationalizing the high-ield strength of thin films in available models of thin-film plasticity.

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