When Interface Gets Rough…

1994 ◽  
Vol 367 ◽  
Author(s):  
Toh-Ming Lu ◽  
Hong-Ning Yang ◽  
Gwo-Ching Wang
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Interface Roughness ◽  
Affine Scaling ◽  
Dynamic Scaling ◽  
Local Slope ◽  
Scaling Hypothesis ◽  
Approaches To Study ◽  
Far From Equilibrium ◽  
The Difference

AbstractInterface roughness is one of the central features in many important thin film technologies. Roughness is a result of far from equilibrium dynamic growth process and is difficult to describe using conventional statistical mechanics. Recently a dynamic scaling hypothesis has been proposed to describe such a system in which both time and space scaling are considered simultaneously. This approach has generated tremendous interest, both theoretical and experimental, for scientists working in thin film growth/etching as well as many diverse fields. In this paper we shall discuss the origin of the formation of interface roughness, the difference between near equilibrium and far from equilibrium growth problems, the relevant parameters that are necessary to describe a rough interface, and the application of the self-affine scaling concept in growth problems. The experimental approaches to study rough interfaces and growth fronts using diffraction will be summarized. It is shown that there exist two types of dynamic scaling during growth, one with a stationary local slope and another one with a nonstationary local slope. Future directions in this new area of research are highlighted.

THE MORPHOLOGY AND EVOLUTION OF THE SURFACE IN EPITAXIAL AND THIN FILM GROWTH: A CONTINUUM MODEL WITH SURFACE DIFFUSION

Fractals ◽  
1993 ◽  
Vol 01 (04) ◽  
pp. 753-766 ◽  
Author(s):  
FEREYDOON FAMILY ◽  
JACQUES G. AMAR
Keyword(s):  
Thin Film ◽  
Surface Diffusion ◽  
Film Growth ◽  
Vertical Jump ◽  
Thin Film Growth ◽  
Discrete Models ◽  
Dynamic Scaling ◽  
Diffusion Operator ◽  
Continuum Equation ◽  
The Continuum

A number of discrete models as well as continuum equations have been proposed for describing epitaxial and thin film growth. We have shown that there exists a macroscopic groove instability in many of these models. This unphysical feature in the continuum equations arises from the truncation or linearization of the diffusion operator along the surface. A similar artifact occurs in the discrete models, because in these models adatoms only diffuse horizontally and must take an unphysical vertical jump at step edges. We have proposed and studied a continuum equation for epitaxial and thin-film growth in which the full diffusion along the surface is taken into account. The results of the solutions of this continuum equation, for the growth and the morphology of the surface, are in excellent agreement with recent low temperature molecular-beam epitaxy and ion-sputtering experiments. In particular, we find that at late times dynamic scaling breaks down and the surface is no longer a self-affine fractal. The surface develops a characteristic morphology whose dependence on deposition rate and surface diffusion is similar to that found in experiments.

FRACTAL SURFACES IN ENGINEERING: APPLICATIONS OF DYNAMIC SCALING

Fractals ◽  
1994 ◽  
Vol 02 (02) ◽  
pp. 211-221
Author(s):  
FEREYDOON FAMILY
Keyword(s):  
Thin Film ◽  
Porous Media ◽  
Surface Science ◽  
Film Growth ◽  
Thin Film Growth ◽  
Flow In Porous Media ◽  
Dynamic Scaling ◽  
Science And Engineering ◽  
Fractal Surfaces ◽  
Wide Range

This talk will be a review of some of the fundamental ideas behind dynamic scaling of fractal surfaces and how it can be used to characterize the evolution and the morphology of surfaces in engineering related problems. After a brief review, two different applications of dynamic scaling will be discussed. The first is the problem of fluid flow in porous media, and the second example will be the problem of how to describe thin film growth by MBE techniques. These examples should illustrate the generality of the method and its applicability to a wide range of problems in surface science and engineering.

Continuum Model of Epitaxial Roughening

1993 ◽  
Vol 317 ◽  
Author(s):  
Jacques G. Amar ◽  
Fereydoon Family
Keyword(s):  
Thin Film ◽  
Relaxation Process ◽  
Continuum Model ◽  
Film Growth ◽  
Thin Film Growth ◽  
Dynamic Scaling ◽  
Interface Width ◽  
Characteristic Morphology ◽  
Continuum Equation

ABSTRACTA continuum equation for epitaxial and thin-film growth in which diffusion along the surface is the dominant relaxation process and the full diffusion along the surface is taken into account, is studied. The interface width is found to grow linearly with time (height) in agreement with recent experiments. At late times dynamic scaling breaks down and the surface develops a characteristic morphology which is similar to that found in experiments.

Microstructural characterization of YBa2Cu3O7-x thin films formed by metalorganic CVD

1991 ◽  
Vol 49 ◽  
pp. 1080-1081
Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Film Growth ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Ion Milling ◽  
Conventional Grinding

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.

Quantitative Image Analysis of Fractal-like Thin Films of Organic Semiconductors

2018 ◽  
Author(s):  
Weikun Zhu ◽  
Erfan Mohammadi ◽  
Ying Diao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Image Analysis ◽  
Fractal Dimension ◽  
Organic Semiconductors ◽  
Film Growth ◽  
Electronic Device ◽  
Significant Control ◽  
Semiconductor Thin Films ◽  
Two Parameters

Morphology modulation offers significant control over organic electronic device performance. However, morphology quantification has been rarely carried out via image analysis. In this work, we designed a MATLAB program to evaluate two key parameters describing morphology of small molecule semiconductor thin films: fractal dimension and film coverage. We then employ this program in a case study of meniscus-guided coating of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C<sub>8</sub>-BTBT) under various conditions to analyze a diverse and complex morphology set. The evolution of morphology in terms of fractal dimension and film coverage was studied as a function of coating speed. We discovered that combined fractal dimension and film coverage can quantitatively capture the key characteristics of C<sub>8</sub>-BTBT thin film morphology; change of these two parameters further inform morphology transition. Furthermore, fractal dimension could potentially shed light on thin film growth mechanisms.

Surface Microstructure Evolution Upon Silicidation of Ni(Pt) and the Different Responses to Metal Etch

2013 ◽  
Author(s):  
Wentao Qin ◽  
Dorai Iyer ◽  
Jim Morgan ◽  
Carroll Casteel ◽  
Robert Watkins ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxide Film ◽  
Microstructure Evolution ◽  
Depth Profiling ◽  
Surface Microstructure ◽  
The Difference ◽  
Surface Microstructures ◽  
Pt Films

Abstract Ni(5 at.%Pt ) films were silicided at a temperature below 400 °C and at 550 °C. The two silicidation temperatures had produced different responses to the subsequent metal etch. Catastrophic removal of the silicide was seen with the low silicidation temperature, while the desired etch selectivity was achieved with the high silicidation temperature. The surface microstructures developed were characterized with TEM and Auger depth profiling. The data correlate with both silicidation temperatures and ultimately the difference in the response to the metal etch. With the high silicidation temperature, there existed a thin Si-oxide film that was close to the surface and embedded with particles which contain metals. This thin film is expected to contribute significantly to the desired etch selectivity. The formation of this layer is interpreted thermodynamically.

scholarly journals Thin film growth of heavy fermion chiral magnet YbNi3Al9

2021 ◽  
Vol 118 (10) ◽  
pp. 102402
Author(s):  
Hiroaki Shishido ◽  
Akira Okumura ◽  
Tatsuya Saimyoji ◽  
Shota Nakamura ◽  
Shigeo Ohara ◽  
...  
Keyword(s):  
Thin Film ◽  
Heavy Fermion ◽  
Film Growth ◽  
Thin Film Growth
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