Formation and Growth of Antiphase Domains During Recrystallization of Cold-Rolled Cu3Au

1994 ◽  
Vol 364 ◽  
Author(s):  
Rui Yang ◽  
Robert W. Cahn

AbstractAn experimental study by TEM was made of the morphology of the antiphase domains formed when heavily rolled Q13AU is annealed at a temperature slightly below the critical temperature for ordering, Tc. Domains are formed at the advancing grain boundary with extremely small size and grow as recrystallization proceeds. From an early stage, domain walls show a preference for (100) orientation. The key question is raised whether domain formation during recrystallization entails the presence of a disordered zone at a moving grain boundary near Tc, and the conclusion is that such a zone is probably present. A provisional theory is constructed for the genesis of domains during recrystallization, taking into account the dragging force which newly formed domains exert on a moving grain boundary thereby diminishing the effective driving force for grain boundary motion, and a critical domain size is estimated which should completely inhibit grain-boundary motion. The intriguing fact that no domains at all are formed during the recrystallization of strongly ordered intermetallics such as Ni3Al is briefly discussed and a reason is proposed.

2007 ◽  
Vol 558-559 ◽  
pp. 223-228 ◽  
Author(s):  
Katsura Kajihara

This study presents in-situ EBSP observations of recrystallization in commercial purity aluminum sheets with different concentrations of solutes and different states of precipitation. The in-situ observations demonstrate clearly the behaviors of the nucleation and growth of recrystallized grains, and the movements of grain boundaries at an early stage of recrystallization. The high mobility of grain boundaries neighboring the deformed matrix was generally observed presumably due to strain-induced grain boundaries migration. The grain boundary motion was also found to strongly depend to the solute content level. These in-situ observations provide important evidence to show that the behaviors of grain boundary motion at an early stage of recrystallization leads to the grain size distribution and the curvature of grain boundaries after the primary recrystallization.


2013 ◽  
Vol 753 ◽  
pp. 107-112 ◽  
Author(s):  
Christoph Günster ◽  
Dmitri A. Molodov ◽  
Günter Gottstein

The motion of grain boundaries in zinc bicrystals (99.995%) driven by the “magnetic” driving force was investigated. Planar symmetrical and asymmetrical tilt grain boundaries with rotation angles in the range between 60° and 90° were examined. At a given temperature the boundary migration rate was found to increase linearly with an applied driving force. The absolute grain boundary mobility was determined. The boundary mobility and its temperature dependence were found to depend on the misorientation angle and the inclination of the boundary plane. An application of a magnetic field during the annealing of cold rolled (90%) Zn-1.1%Al sheet specimens resulted in an asymmetry of the two major texture components. This is interpreted in terms of magnetically affected grain growth kinetics.


2004 ◽  
Vol 467-470 ◽  
pp. 757-762
Author(s):  
V.A. Ivanov ◽  
Dmitri A. Molodov ◽  
Lasar S. Shvindlerman ◽  
Günter Gottstein

The motion of a curved grain boundary with a “surface triple junction” (“free surface – boundary - free surface”) in aluminum bicrystals is studied. The effect of the “surface triple junction” on grain boundary motion is discussed in the terms of the equilibrium of boundary and junction velocity. Boundary motion in samples with different boundary curvature revealed a strict proportionality of boundary velocity and driving force. This result corroborates the fact that in the entire investigated temperature range the “surface” triple junction does not affect the boundary motion.


2011 ◽  
Vol 65 (2) ◽  
pp. 151-154 ◽  
Author(s):  
M. Velasco ◽  
H. Van Swygenhoven ◽  
C. Brandl

1990 ◽  
Vol 183 ◽  
Author(s):  
J. L. Batstone

AbstractMotion of ordered twin/matrix interfaces in films of silicon on sapphire occurs during high temperature annealing. This process is shown to be thermally activated and is analogous to grain boundary motion. Motion of amorphous/crystalline interfaces occurs during recrystallization of CoSi2 and NiSi2 from the amorphous phase. In-situ transmission electron microscopy has revealed details of the growth kinetics and interfacial roughness.


2020 ◽  
pp. 541-544
Author(s):  
J.L. Turner ◽  
M. Nakagawa ◽  
M.T. Lusk

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